| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive investigation of total ionizing dose effects on bulk FinFETs through TCAD simulation
|
Gong, Yanfei
|
|
|
163 |
C |
p.
|
artikel
|
| 2 |
An online junction temperature detection circuit for SiC MOSFETs considering threshold voltage drift compensation
|
Wang, Ruoyin
|
|
|
163 |
C |
p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
|
163 |
C |
p.
|
artikel
|
| 4 |
Effects of different air gaps of underfill encapsulant on multi-stack printed circuit board
|
Abas, Mohamad Aizat bin
|
|
|
163 |
C |
p.
|
artikel
|
| 5 |
Experimental analysis of NBTI effects on QDI circuits with resistive bridging faults
|
Lamine, Zina
|
|
|
163 |
C |
p.
|
artikel
|
| 6 |
Finite element analysis of 2.5D packaging processes based on multi-physics field coupling for predicting the reliability of IC components
|
Li, Wenqian
|
|
|
163 |
C |
p.
|
artikel
|
| 7 |
Modeling of HCI effect in nFinFET for circuit reliability simulation
|
Zhang, Jun-an
|
|
|
163 |
C |
p.
|
artikel
|
| 8 |
Physics-of-failure based lifetime modelling for SiC based automotive power modules using rate- and temperature-dependent modelling of sintered silver
|
Forndran, Freerik
|
|
|
163 |
C |
p.
|
artikel
|
| 9 |
Reliability optimization of dopant-free TFET performance through advanced metal layer techniques
|
Chandan, Bandi Venkata
|
|
|
163 |
C |
p.
|
artikel
|
| 10 |
Research on equivalent modeling and model testing verification methods for material mechanics parameters of TXV structure
|
Gu, Tingwei
|
|
|
163 |
C |
p.
|
artikel
|
| 11 |
Signal integrity and heat transfer performance of through-boron nitride via
|
Sun, Chao
|
|
|
163 |
C |
p.
|
artikel
|
| 12 |
Solder joints stress analysis and optimization of chip component under shear and tensile load based on orthogonal experimental design and gray correlation analysis
|
Li, Shuyi
|
|
|
163 |
C |
p.
|
artikel
|
| 13 |
Study on single-event burnout hardening with reduction of hole current density by top polysilicon diode of SOI LDMOS based on TCAD simulations
|
Niu, Wenze
|
|
|
163 |
C |
p.
|
artikel
|
| 14 |
The effect of oxide scaling on ionising radiation response of sense-switch flash cells
|
Shi, Hui
|
|
|
163 |
C |
p.
|
artikel
|
| 15 |
The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy
|
Yang, Zhimei
|
|
|
163 |
C |
p.
|
artikel
|
| 16 |
The impact of negative gate voltage on neutron-induced single event effects for SiC MOSFETs
|
Wang, Haibin
|
|
|
163 |
C |
p.
|
artikel
|
| 17 |
Thermal cycling reliability of electronic components in bolted assemblies: A study of the influence of bolt position
|
Zhao, Shuaifeng
|
|
|
163 |
C |
p.
|
artikel
|
| 18 |
The variation in Anand model parameters – How does that affect the bond's response? A comparative study considering sintered Ag bonds
|
Gharaibeh, Mohammad A.
|
|
|
163 |
C |
p.
|
artikel
|
Tijdschrift beschrijving