Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM Aziza, H.
 2015
 103 C p. 73-78
6 p.
 artikel
2 Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET Anvarifard, Mohammad K.
 2015
 103 C p. 154-161
8 p.
 artikel
3 A finite state machine read-out chip for integrated surface acoustic wave sensors Rakshit, Sambarta
 2015
 103 C p. 1-6
6 p.
 artikel
4 A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application Li, Yang
 2015
 103 C p. 147-153
7 p.
 artikel
5 Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs Loghmany, Alireza
 2015
 103 C p. 162-166
5 p.
 artikel
6 Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics Wu, Tian-Li
 2015
 103 C p. 127-130
4 p.
 artikel
7 Analytical modeling of multi-layered Printed Circuit Board dedicated to electronic component thermal characterization Monier-Vinard, Eric
 2015
 103 C p. 30-39
10 p.
 artikel
8 Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes Yuan, Hao
 2015
 103 C p. 83-89
7 p.
 artikel
9 A novel scaling theory for fully depleted pi-gate (ΠG) MOSFETs Chiang, Te-Kuang
 2015
 103 C p. 199-201
3 p.
 artikel
10 Comparison of electron–phonon and hole–phonon energy loss rates in silicon Richardson-Bullock, J.S.
 2015
 103 C p. 40-43
4 p.
 artikel
11 Design, fabrication and test of novel LDMOS-SCR for improving holding voltage Yang, Liu
 2015
 103 C p. 122-126
5 p.
 artikel
12 Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs Bühler, R.T.
 2015
 103 C p. 209-215
7 p.
 artikel
13 Editorial Board 2015
 103 C p. IFC-
1 p.
 artikel
14 Energy capability improvement of power DMOS transistors operating in pulsed conditions Costachescu, Dragos
 2015
 103 C p. 140-146
7 p.
 artikel
15 Estimation of the accuracy of the microwave FET equivalent circuit using the quasi-hydrodynamic model of electron transport Garber, Gennadiy Z.
 2015
 103 C p. 115-121
7 p.
 artikel
16 Experimental developments of A2RAM memory cells on SOI and bulk substrates Rodriguez, Noel
 2015
 103 C p. 7-14
8 p.
 artikel
17 Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique Liau, Leo Chau-Kuang
 2015
 103 C p. 54-58
5 p.
 artikel
18 GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN Togtema, G.
 2015
 103 C p. 44-48
5 p.
 artikel
19 Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band Kawasaki, Tetsuya
 2015
 103 C p. 216-221
6 p.
 artikel
20 High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment Seok, Ogyun
 2015
 103 C p. 49-53
5 p.
 artikel
21 Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel Baek, Ki-Ju
 2015
 103 C p. 98-103
6 p.
 artikel
22 Integration of crystalline orientated γ-Al2O3 films and complementary metal–oxide–semiconductor circuits on Si(100) substrate Oishi, Koji
 2015
 103 C p. 110-114
5 p.
 artikel
23 Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology Wang, Guilei
 2015
 103 C p. 222-228
7 p.
 artikel
24 Interface pn junction arrays with high yielded grown p-Si microneedles by vapor–liquid–solid method at low temperature Islam, Md. Shofiqul
 2015
 103 C p. 90-97
8 p.
 artikel
25 Luminescence and spectrum variations caused by thermal annealing in undoped and doped polyfluorene OLEDs Jokinen, K.
 2015
 103 C p. 184-189
6 p.
 artikel
26 Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs Shin, Minju
 2015
 103 C p. 229-235
7 p.
 artikel
27 Methodology for 1/f noise parameter extraction for high-voltage MOSFETs Mavredakis, Nikolaos
 2015
 103 C p. 202-208
7 p.
 artikel
28 Model of current-limited negative differential resistance in oxide-based resistance-switching devices Chen, Frederick T.
 2015
 103 C p. 59-63
5 p.
 artikel
29 Multi-input intrinsic and extrinsic field effect transistor models beyond cutoff frequency Ibrahim, Nihal Y.
 2015
 103 C p. 236-241
6 p.
 artikel
30 50nm Al x O y ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset Ning, Sheyang
 2015
 103 C p. 64-72
9 p.
 artikel
31 N-well resistance modelling in Q-factor of doughnut-shaped PN varactors Marrero-Martín, M.
 2015
 103 C p. 104-109
6 p.
 artikel
32 On the effect of technology scaling on variation-resilient sub-threshold circuits Reynders, Nele
 2015
 103 C p. 19-29
11 p.
 artikel
33 Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization Hong, Won-Eui
 2015
 103 C p. 178-183
6 p.
 artikel
34 Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance Park, Jae Chul
 2015
 103 C p. 195-198
4 p.
 artikel
35 Stable single mode operation of quantum cascade lasers by complex-coupled second-order distributed feedback grating Liu, Yinghui
 2015
 103 C p. 79-82
4 p.
 artikel
36 Superconducting platinum silicide for electron cooling in silicon Prest, M.J.
 2015
 103 C p. 15-18
4 p.
 artikel
37 Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM) Chin, Fun-Tat
 2015
 103 C p. 190-194
5 p.
 artikel
38 The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility Tseng, Wei-Hao
 2015
 103 C p. 173-177
5 p.
 artikel
39 The impact of stress-induced defects on MOS electrostatics and short-channel effects Esqueda, Ivan S.
 2015
 103 C p. 167-172
6 p.
 artikel
40 Thermoelectric generators from SiO2/SiO2 +Ge nanolayer thin films modified by MeV Si ions Budak, S.
 2015
 103 C p. 131-139
9 p.
 artikel
                             40 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland