| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions
|
Ren, Q. W.
|
|
2001
|
12 |
4-6 |
p. 313-316
|
artikel
|
| 2 |
An electron paramagnetic resonance study of defects in PECVD silicon oxides
|
Barklie, R. C.
|
|
2001
|
12 |
4-6 |
p. 231-234
|
artikel
|
| 3 |
Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
|
Bonar, J. M.
|
|
2001
|
12 |
4-6 |
p. 219-221
|
artikel
|
| 4 |
Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures
|
Dollfus, P.
|
|
2001
|
12 |
4-6 |
p. 245-248
|
artikel
|
| 5 |
Characterization of CVD tungsten deposited by silane reduction
|
Bain, M. F.
|
|
2001
|
12 |
4-6 |
p. 327-331
|
artikel
|
| 6 |
C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2 remote plasma cleaning of the InP surface
|
Castán, H.
|
|
2001
|
12 |
4-6 |
p. 263-267
|
artikel
|
| 7 |
Dielectric properties of thin solid films formed on silicon
|
Fannin, P. C.
|
|
2001
|
12 |
4-6 |
p. 347-350
|
artikel
|
| 8 |
Dislocation behavior in highly impurity-doped Si
|
Yonenaga, I.
|
|
2001
|
12 |
4-6 |
p. 285-288
|
artikel
|
| 9 |
DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films
|
Dueñas, S.
|
|
2001
|
12 |
4-6 |
p. 317-321
|
artikel
|
| 10 |
Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure
|
Emtsev, V. V.
|
|
2001
|
12 |
4-6 |
p. 223-225
|
artikel
|
| 11 |
Editorial for Journal of Materials Science: Materials in Electronics
|
Willoughby, Arthur
|
|
2001
|
12 |
4-6 |
p. 5
|
artikel
|
| 12 |
Effect of nitridation on Fowler–Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate
|
Croci, S.
|
|
2001
|
12 |
4-6 |
p. 333-338
|
artikel
|
| 13 |
Electrical and structural characterization of DLC films deposited by magnetron sputtering
|
Massi, M.
|
|
2001
|
12 |
4-6 |
p. 343-346
|
artikel
|
| 14 |
Electrical characterization of deep levels in N and P 6H-SiC Schottky diodes
|
Sghaier, N.
|
|
2001
|
12 |
4-6 |
p. 273-276
|
artikel
|
| 15 |
Electrical characterization of shallow cobalt-silicided junctions
|
Simoen, E.
|
|
2001
|
12 |
4-6 |
p. 207-210
|
artikel
|
| 16 |
Electrical detection and simulation of stress in silicon nitride spacer technology
|
van Zeijl, H. W.
|
|
2001
|
12 |
4-6 |
p. 339-341
|
artikel
|
| 17 |
Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon
|
Cavaco, A.
|
|
2001
|
12 |
4-6 |
p. 241-243
|
artikel
|
| 18 |
Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy
|
Lowney, D.
|
|
2001
|
12 |
4-6 |
p. 249-253
|
artikel
|
| 19 |
Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors
|
Wöhl, G.
|
|
2001
|
12 |
4-6 |
p. 235-240
|
artikel
|
| 20 |
Growth and characterization of shape memory alloy thin films for Si microactuator technologies
|
Yaakoubi, N.
|
|
2001
|
12 |
4-6 |
p. 323-326
|
artikel
|
| 21 |
High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers
|
Woitok, J. F.
|
|
2001
|
12 |
4-6 |
p. 295-298
|
artikel
|
| 22 |
LPCVD of tungsten by selective deposition on silicon
|
Li, F. X.
|
|
2001
|
12 |
4-6 |
p. 303-306
|
artikel
|
| 23 |
Magnetic nanoparticles and nanoparticle assemblies from metallorganic precursors
|
Gun'ko, Y. K.
|
|
2001
|
12 |
4-6 |
p. 299-302
|
artikel
|
| 24 |
Novel fabrication methods for submicrometer Josephson junction qubits
|
Potts, A.
|
|
2001
|
12 |
4-6 |
p. 289-293
|
artikel
|
| 25 |
Novel materials for thermal via incorporation into SOI structures
|
Baine, P.
|
|
2001
|
12 |
4-6 |
p. 215-218
|
artikel
|
| 26 |
Optical characterization of ZnO
|
Gaspar, C.
|
|
2001
|
12 |
4-6 |
p. 269-271
|
artikel
|
| 27 |
Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS
|
Grau, L.
|
|
2001
|
12 |
4-6 |
p. 211-214
|
artikel
|
| 28 |
Radiation damage of N-MOSFETS fabricated in a BiCMOS process
|
Kobayashi, K.
|
|
2001
|
12 |
4-6 |
p. 227-230
|
artikel
|
| 29 |
Raman active E2 modes in aluminum nitride films
|
Oliveira, I. C.
|
|
2001
|
12 |
4-6 |
p. 259-262
|
artikel
|
| 30 |
Spectroscopic characteristics of SiO and SiO2 solid films: Assignment and local field effect influence
|
Shaganov, I. I.
|
|
2001
|
12 |
4-6 |
p. 351-355
|
artikel
|
| 31 |
Studies of the formation of Ga and Al wires on Si(1 1 2) facet surfaces
|
Prokes, S. M.
|
|
2001
|
12 |
4-6 |
p. 277-283
|
artikel
|
| 32 |
Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing
|
Toh, B. H. W.
|
|
2001
|
12 |
4-6 |
p. 307-312
|
artikel
|
| 33 |
Tunneling statistics and the manufacturability of semiconductor tunnel devices
|
Hayden, R. K.
|
|
2001
|
12 |
4-6 |
p. 255-257
|
artikel
|
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