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                             31 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advanced metrology for rapid characterization of the thermal mechanical properties of low-k dielectric and copper thin films Lau, S. H.
2001
30 4 p. 299-303
artikel
2 A model for wafer scale variation of removal rate in chemical mechanical polishing based on elastic pad deformation Fu, Guanghui
2001
30 4 p. 400-408
artikel
3 Au−Ni−Sn intermetallic phase relationships in eutectic Pb−Sn solder formed on Ni/Au metallization Song, H. G.
2001
30 4 p. 409-414
artikel
4 Barrier layers for Cu ULSI metallization Shacham-Diamand, Yosi

30 4 p. 336-344
artikel
5 Barrier layers for Cu ULSI metallization Shacham-Diamand, Yosi
2001
30 4 p. 336-344
artikel
6 Comparative study on the effect of misalignment on bordered and borderless contacts Huang, J. S.
2001
30 4 p. 360-366
artikel
7 Cu-CMP for dual damascene technology: Prestonian vs. non-prestonian regimes of Cu removal Gotkis, Y.
2001
30 4 p. 396-399
artikel
8 Evaluation of ultra-low-k dielectric materials for advanced interconnects Jin, C.

30 4 p. 284-289
artikel
9 Evaluation of ultra-low-k dielectric materials for advanced interconnects Jin, C.
2001
30 4 p. 284-289
artikel
10 Fatigue crack growth behavior in 63Sn-37Pb and 95Pb-5Sn solder materials Zhao, J.
2001
30 4 p. 415-421
artikel
11 Foreword Shi, Frank G.
2001
30 4 p. 283
artikel
12 Grain growth simulation of [001] textured YBCO films grown on (001) substrates with large lattice misfit: Prediction of misorientations of the remaining boundaries Tsai, Jack W. H.
2001
30 4 p. 422-431
artikel
13 Influence of oxides on friction during Cu CMP Liang, Hong
2001
30 4 p. 391-395
artikel
14 Interactions between solder and metallization during long-term aging of advanced microelectronic packages Ho, C. E.
2001
30 4 p. 379-385
artikel
15 Local Joule heating and overall resistance increase in void-containing aluminum interconnects Shen, Y. L.
2001
30 4 p. 367-371
artikel
16 Low dielectric constant materials Treichel, H.
2001
30 4 p. 290-298
artikel
17 Material and electrical properties of electroless Ag-W thin film Inberg, A.
2001
30 4 p. 355-359
artikel
18 Material and process challenges in 100 nm interconnects module technology and beyond Ohba, Takayuki
2001
30 4 p. 314-319
artikel
19 Material issues in electronic interconnects and packaging Subramanian, K. N.
2001
30 4 p. 372-378
artikel
20 Microstructural characterization of inlaid copper interconnect lines Besser, Paul R.
2001
30 4 p. 320-330
artikel
21 Microstructural characterization of inlaid copper interconnect lines Besser, Paul R.

30 4 p. 320-330
artikel
22 Microstructure examination of copper wafer bonding Chen, Kuan-Neng
2001
30 4 p. 331-335
artikel
23 Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN Schweitz, K. O.
2001
30 4 p. 445
artikel
24 Reduction of photoresist usage during spin coating Chou, Fu-Chu
2001
30 4 p. 432-438
artikel
25 Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Liliental-Weber, Z.
2001
30 4 p. 439-444
artikel
26 Spontaneous, non-aqueous electrochemical deposition of copper and palladium on Al and Al(Cu) thin films Fang, R.
2001
30 4 p. 349-354
artikel
27 Stress testing of a recrystallizing CaO-B2O3-SiO2 glass-ceramic with Ag electrodes for high frequency electronic packaging Shapiro, Andrew A.
2001
30 4 p. 386-390
artikel
28 Structure and property characterization of low-k dielectric porous thin films Bauer, Barry J.
2001
30 4 p. 304-308
artikel
29 Synthesis and characterization of porous polymeric low dielectric constant films Xu, Yuhuan

30 4 p. 309-313
artikel
30 Synthesis and characterization of porous polymeric low dielectric constant films Xu, Yuhuan
2001
30 4 p. 309-313
artikel
31 TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology Kizil, Huseyin
2001
30 4 p. 345-348
artikel
                             31 gevonden resultaten
 
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