| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation of nitrogen implants in 6H-SiC
|
Pan, J. N.
|
|
1997
|
26 |
3 |
p. 208-211
|
artikel
|
| 2 |
An EPR study of defects induced in 6H-SiC by ion implantation
|
Barklie, R. C.
|
|
1997
|
26 |
3 |
p. 137-143
|
artikel
|
| 3 |
A silicon carbide LOCOS process using enhanced thermal oxidation by argon implantation
|
Alok, Dev
|
|
1997
|
26 |
3 |
p. 134-136
|
artikel
|
| 4 |
Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition
|
Li, X.
|
|
1997
|
26 |
3 |
p. 306-310
|
artikel
|
| 5 |
Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes
|
Ping, A. T.
|
|
1997
|
26 |
3 |
p. 266-271
|
artikel
|
| 6 |
Control of Al and B doping transients in 6H and 4H SiC grown by vapor phase epitaxy
|
Nordell, N.
|
|
1997
|
26 |
3 |
p. 187-192
|
artikel
|
| 7 |
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
|
Perry, William G.
|
|
1997
|
26 |
3 |
p. 224-231
|
artikel
|
| 8 |
Doping of 3C-SiC by implantation of nitrogen at high temperatures
|
Lossy, R.
|
|
1997
|
26 |
3 |
p. 123-127
|
artikel
|
| 9 |
Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
|
Hwang, C. Y.
|
|
1997
|
26 |
3 |
p. 243-251
|
artikel
|
| 10 |
Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC
|
Schoen, K. J.
|
|
1997
|
26 |
3 |
p. 193-197
|
artikel
|
| 11 |
Electron transport properties of quantized silicon carbide inversion layers
|
Roldán, J. B.
|
|
1997
|
26 |
3 |
p. 203-207
|
artikel
|
| 12 |
Foreword
|
Melloch, Michael R.
|
|
1997
|
26 |
3 |
p. 107
|
artikel
|
| 13 |
Formation of dry etched gratings in GaN and InGaN
|
Lee, J. W.
|
|
1997
|
26 |
3 |
p. 290-293
|
artikel
|
| 14 |
Free electron laser annealing of silocon carbibe
|
Ohyama, Hideaki
|
|
1997
|
26 |
3 |
p. 183-186
|
artikel
|
| 15 |
Gas-source molecular beam epitaxial growth and characterization of InNxP1−x on InP
|
Bi, W. G.
|
|
1997
|
26 |
3 |
p. 252-256
|
artikel
|
| 16 |
Growth and characterization of GaN thin films on SiC SOI substrates
|
Steckl, A. J.
|
|
1997
|
26 |
3 |
p. 217-223
|
artikel
|
| 17 |
Growth of GaBN ternary solutions by organometallic vapor phase epitaxy
|
Polyakov, A. Y.
|
|
1997
|
26 |
3 |
p. 237-242
|
artikel
|
| 18 |
Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio
|
Nakadaira, Atsushi
|
|
1997
|
26 |
3 |
p. 320-324
|
artikel
|
| 19 |
Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma
|
Gillis, H. P.
|
|
1997
|
26 |
3 |
p. 301-305
|
artikel
|
| 20 |
Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory
|
Si, Weimin
|
|
1997
|
26 |
3 |
p. 128-133
|
artikel
|
| 21 |
Hopping conduction in heavily doped bulk n-type SiC
|
Mitchel, W. C.
|
|
1997
|
26 |
3 |
p. 113-118
|
artikel
|
| 22 |
Hot-implantation of nitrogen donors into p- type α-SiC and characterization of n+-p junction
|
Inoue, N.
|
|
1997
|
26 |
3 |
p. 165-171
|
artikel
|
| 23 |
Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate
|
Wang, J.
|
|
1997
|
26 |
3 |
p. 232-236
|
artikel
|
| 24 |
Hydrogen passivation in n- and p-type 6H-SiC
|
Ren, F.
|
|
1997
|
26 |
3 |
p. 198-202
|
artikel
|
| 25 |
Improved Ni ohmic contact on n-type 4H-SiC
|
Hallin, C.
|
|
1997
|
26 |
3 |
p. 119-122
|
artikel
|
| 26 |
Improvement of metal-semiconductor-metal GaN photoconductors
|
Huang, Z. C.
|
|
1997
|
26 |
3 |
p. 330-333
|
artikel
|
| 27 |
Improvement of the crystallinity of 3C-SiC films by lowering the electron temperatures in the afterglow plasma region using triode plasma CVD
|
Yasui, K.
|
|
1997
|
26 |
3 |
p. 178-182
|
artikel
|
| 28 |
In situ control of gan growth by molecular beam epitaxy
|
Held, R.
|
|
1997
|
26 |
3 |
p. 272-280
|
artikel
|
| 29 |
Investigation of Co/SiC interface reaction
|
Park, S. W.
|
|
1997
|
26 |
3 |
p. 172-177
|
artikel
|
| 30 |
Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
|
Si, Weimin
|
|
1997
|
26 |
3 |
p. 151-159
|
artikel
|
| 31 |
Ion implantation doping of OMCVD grown GaN
|
Edwards, A.
|
|
1997
|
26 |
3 |
p. 334-339
|
artikel
|
| 32 |
Low resistance bilayer Nd/Al ohmic contacts on n-type GaN
|
Lee, Ching-Ting
|
|
1997
|
26 |
3 |
p. 262-265
|
artikel
|
| 33 |
Low-temperature interface modification by hydrocarbon radicals in heteroepitaxy of 3C-SiC on Si clean surface
|
Hatayama, Tomoaki
|
|
1997
|
26 |
3 |
p. 160-164
|
artikel
|
| 34 |
Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications
|
Tin, C. C.
|
|
1997
|
26 |
3 |
p. 212-216
|
artikel
|
| 35 |
MOVPE growth and optical properties of gan deposited on c-plane sapphire
|
Briot, O.
|
|
1997
|
26 |
3 |
p. 294-300
|
artikel
|
| 36 |
Photoluminescence characteristics of GaN/lnGaN/GaN quantum wells
|
Shmagin, I. K.
|
|
1997
|
26 |
3 |
p. 325-329
|
artikel
|
| 37 |
Rapid thermal annealing of ion implanted 6H-SiC by microwave processing
|
Gardner, Jason A.
|
|
1997
|
26 |
3 |
p. 144-150
|
artikel
|
| 38 |
Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique
|
Alok, Dev
|
|
1997
|
26 |
3 |
p. 108-112
|
artikel
|
| 39 |
Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
|
Romano, L. T.
|
|
1997
|
26 |
3 |
p. 285-289
|
artikel
|
| 40 |
Study of indium droplets formation on the InxGa1−xN films by single crystal x-ray diffraction
|
Lu, Hongqiang
|
|
1997
|
26 |
3 |
p. 281-284
|
artikel
|
| 41 |
The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD
|
Grudowski, P. A.
|
|
1997
|
26 |
3 |
p. 257-261
|
artikel
|
| 42 |
Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes
|
Eliseev, Petr G.
|
|
1997
|
26 |
3 |
p. 311-319
|
artikel
|
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