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                             81 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio modeling of defect levels in Ge clusters and supercells Coutinho, J.
 2006
 9 4-5 p. 477-483
7 p.
 artikel
2 Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals Sueoka, K.
 2006
 9 4-5 p. 494-497
4 p.
 artikel
3 A comparative study of ion implantation and irradiation-induced defects in Ge crystals Markevich, V.P.
 2006
 9 4-5 p. 589-596
8 p.
 artikel
4 A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium Opsomer, K.
 2006
 9 4-5 p. 554-558
5 p.
 artikel
5 A deep-level transient spectroscopy study of transition metals in n-type germanium Forment, S.
 2006
 9 4-5 p. 559-563
5 p.
 artikel
6 Amorphization kinetics of germanium under ion implantation Koffel, S.
 2006
 9 4-5 p. 664-667
4 p.
 artikel
7 Atomic scale simulations of arsenic–vacancy complexes in germanium and silicon Chroneos, A.
 2006
 9 4-5 p. 536-540
5 p.
 artikel
8 Atomic transport in germanium and the mechanism of arsenic diffusion Bracht, Hartmut
 2006
 9 4-5 p. 471-476
6 p.
 artikel
9 Carrier lifetime studies in Ge using microwave and infrared light techniques Gaubas, E.
 2006
 9 4-5 p. 781-787
7 p.
 artikel
10 Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS Chin, Albert
 2006
 9 4-5 p. 711-715
5 p.
 artikel
11 Defect imaging of SiGe strain relaxed buffers grown by LEPECVD Marchionna, S.
 2006
 9 4-5 p. 802-805
4 p.
 artikel
12 Defects induced by irradiation with fast neutrons in n-type germanium Kovačević, I.
 2006
 9 4-5 p. 606-612
7 p.
 artikel
13 Diffusion of interstitial Hydrogen molecules in Crystalline Germanium and Silicon: Quantumchemical simulation Gusakov, Vasilii
 2006
 9 4-5 p. 531-535
5 p.
 artikel
14 Divacancy-related complexes in Si(1− x )Ge( x ) Khirunenko, L.I.
 2006
 9 4-5 p. 525-530
6 p.
 artikel
15 DLTS studies of irradiation-induced defects in p-type germanium Christian Petersen, M.
 2006
 9 4-5 p. 597-599
3 p.
 artikel
16 Effect of Ba termination layer on chemical and electrical passivation of Ge (100) surfaces Cattoni, A.
 2006
 9 4-5 p. 701-705
5 p.
 artikel
17 Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge Auret, F.D.
 2006
 9 4-5 p. 576-579
4 p.
 artikel
18 Electrochemical pore etching in Ge Cheng, F.
 2006
 9 4-5 p. 694-700
7 p.
 artikel
19 Electron-beam-induced current imaging for the characterisation of structural defects in Si1− x Ge x films grown by LE-PECVD Virtuani, A.
 2006
 9 4-5 p. 798-801
4 p.
 artikel
20 Energy levels of atomic hydrogen in germanium from ab-initio calculations Almeida, L.M.
 2006
 9 4-5 p. 503-506
4 p.
 artikel
21 Enhanced formation of oxygen-related thermal donors in Ge crystals exposed to hydrogen plasma Kazuchits, N.M.
 2006
 9 4-5 p. 625-628
4 p.
 artikel
22 Epitaxial growth of Ge and SiGe on Si substrates Nylandsted Larsen, Arne
 2006
 9 4-5 p. 454-459
6 p.
 artikel
23 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates Srinivasan, P.
 2006
 9 4-5 p. 721-726
6 p.
 artikel
24 Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography Berbezier, I.
 2006
 9 4-5 p. 812-816
5 p.
 artikel
25 Formation and stability of germanium oxide induced by atomic oxygen exposure Molle, Alessandro
 2006
 9 4-5 p. 673-678
6 p.
 artikel
26 Formation energy and migration barrier of a Ge vacancy from ab initio studies Pinto, H.M.
 2006
 9 4-5 p. 498-502
5 p.
 artikel
27 Formation of Ge nanocrystals and SiGe in PECVD grown SiN x :Ge thin films Dana, Aykutlu
 2006
 9 4-5 p. 848-852
5 p.
 artikel
28 Formation of Ge nanocrystals by utilizing nanocluster source Lee, P.F.
 2006
 9 4-5 p. 817-822
6 p.
 artikel
29 Formation of Mn5Ge3 nanoclusters in highly diluted Mn x Ge1− x alloys Morresi, L.
 2006
 9 4-5 p. 836-840
5 p.
 artikel
30 Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1− x Ge x Ulyashin, A.G.
 2006
 9 4-5 p. 772-776
5 p.
 artikel
31 Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior Chen, Jiahe
 2006
 9 4-5 p. 600-605
6 p.
 artikel
32 Germanium: From its discovery to SiGe devices Haller, E.E.
 2006
 9 4-5 p. 408-422
15 p.
 artikel
33 Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers Depuydt, Ben
 2006
 9 4-5 p. 437-443
7 p.
 artikel
34 Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics Wadsworth, H.J.
 2006
 9 4-5 p. 685-689
5 p.
 artikel
35 Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices Akatsu, Takeshi
 2006
 9 4-5 p. 444-448
5 p.
 artikel
36 Ge substrates made by Ge-condensation technique: Challenges and current understanding Terzieva, Valentina
 2006
 9 4-5 p. 449-453
5 p.
 artikel
37 Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures Rössner, Benjamin
 2006
 9 4-5 p. 777-780
4 p.
 artikel
38 Hydrogen in germanium Weber, J.
 2006
 9 4-5 p. 564-570
7 p.
 artikel
39 Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium Lauwaert, J.
 2006
 9 4-5 p. 571-575
5 p.
 artikel
40 Hydrogen-related shallow donors in Ge crystals implanted with protons Pokotilo, Ju.M.
 2006
 9 4-5 p. 629-633
5 p.
 artikel
41 Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions Satta, A.
 2006
 9 4-5 p. 716-720
5 p.
 artikel
42 Implantation and diffusion of phosphorous in germanium Chroneos, A.
 2006
 9 4-5 p. 640-643
4 p.
 artikel
43 Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulses Rosiński, M.
 2006
 9 4-5 p. 655-658
4 p.
 artikel
44 Influence of nucleation parameters in the spatial distribution of the Ge nanocrystals formed by LPCVD Marins, E.S.
 2006
 9 4-5 p. 828-831
4 p.
 artikel
45 Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals Markevich, V.P.
 2006
 9 4-5 p. 613-618
6 p.
 artikel
46 Interface characterization of high-k dielectrics on Ge substrates Misra, D.
 2006
 9 4-5 p. 741-748
8 p.
 artikel
47 Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements Martens, K.
 2006
 9 4-5 p. 749-752
4 p.
 artikel
48 Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence Sumitomo, Takamichi
 2006
 9 4-5 p. 794-797
4 p.
 artikel
49 Ion-implantation issues in the formation of shallow junctions in germanium Simoen, E.
 2006
 9 4-5 p. 634-639
6 p.
 artikel
50 Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(001) windows Halbwax, M.
 2006
 9 4-5 p. 460-464
5 p.
 artikel
51 Laser annealing for n+/p junction formation in germanium Tsouroutas, P.
 2006
 9 4-5 p. 644-649
6 p.
 artikel
52 Local vibrations of interstitial carbon in SiGe alloys Khirunenko, L.I.
 2006
 9 4-5 p. 514-519
6 p.
 artikel
53 Metals in germanium Clauws, P.
 2006
 9 4-5 p. 546-553
8 p.
 artikel
54 Modeling of low temperature SiGe oxidation Mane, S.S.
 2006
 9 4-5 p. 668-672
5 p.
 artikel
55 Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded Ge x Si1− x (0.3<x<0) spacer emitter and collector Sfina, N.
 2006
 9 4-5 p. 737-740
4 p.
 artikel
56 Nanocalorimetric high-temperature characterization of ultrathin films of a-Ge Lopeandía, A.F.
 2006
 9 4-5 p. 806-811
6 p.
 artikel
57 Non-collinear magnetic states of Mn5Ge3 compound Stroppa, A.
 2006
 9 4-5 p. 841-847
7 p.
 artikel
58 Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique Huguenin-Love, J.L.
 2006
 9 4-5 p. 759-763
5 p.
 artikel
59 Optical characterization of dislocation free Ge and GeOI wafers Kalem, Seref
 2006
 9 4-5 p. 753-758
6 p.
 artikel
60 Oxygen loss and thermal double donor formation in germanium Litvinov, V.V.
 2006
 9 4-5 p. 619-624
6 p.
 artikel
61 Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films Christensen, J.S.
 2006
 9 4-5 p. 650-654
5 p.
 artikel
62 Point defects in germanium: Reliable and questionable data in radiation experiments Emtsev, Vadim
 2006
 9 4-5 p. 580-588
9 p.
 artikel
63 Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium Arutyunov, N.Yu.
 2006
 9 4-5 p. 788-793
6 p.
 artikel
64 Preface Claeys, Cor
 2006
 9 4-5 p. 407-
1 p.
 artikel
65 Radiation damage in electron-irradiated strained Si n-MOSFETs Takakura, K.
 2006
 9 4-5 p. 732-736
5 p.
 artikel
66 Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substrates Wietler, Tobias F.
 2006
 9 4-5 p. 659-663
5 p.
 artikel
67 Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth Śpiewak, P.
 2006
 9 4-5 p. 465-470
6 p.
 artikel
68 Spectroscopy of electron states at interfaces of (100)Ge with high-κ insulators Afanas’ev, V.V.
 2006
 9 4-5 p. 764-771
8 p.
 artikel
69 Spontaneous Ge island ordering promoted by partial silicon capping De Seta, M.
 2006
 9 4-5 p. 823-827
5 p.
 artikel
70 Strain and lattice engineering for Ge FET devices Bedell, S.W.
 2006
 9 4-5 p. 423-436
14 p.
 artikel
71 Strain-induced shift of phonon modes in Si 1 - x Ge x alloys Pezzoli, F.
 2006
 9 4-5 p. 541-545
5 p.
 artikel
72 Structural and magnetic properties of GeMn diluted magnetic semiconductor Ayoub, J.-P.
 2006
 9 4-5 p. 832-835
4 p.
 artikel
73 Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1− x Ge x ) deposited by DC magnetron sputtering at high rate Fedala, A.
 2006
 9 4-5 p. 690-693
4 p.
 artikel
74 Studies of the VO centre in Ge using first principles cluster calculations Carvalho, A.
 2006
 9 4-5 p. 489-493
5 p.
 artikel
75 Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contact Maeda, Tatsuro
 2006
 9 4-5 p. 706-710
5 p.
 artikel
76 Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium Janke, C.
 2006
 9 4-5 p. 484-488
5 p.
 artikel
77 The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates Lukyanchikova, N.
 2006
 9 4-5 p. 727-731
5 p.
 artikel
78 The effect of compressive biaxial stress on vacancy clustering in thin Si–Ge layers Ganchenkova, M.G.
 2006
 9 4-5 p. 507-513
7 p.
 artikel
79 Thermoelectric properties of Si–Ge whiskers Druzhinin, Anatolij
 2006
 9 4-5 p. 853-857
5 p.
 artikel
80 Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality Leys, F.E.
 2006
 9 4-5 p. 679-684
6 p.
 artikel
81 Vacancy-dioxygen centers in Si-rich SiGe alloys Khirunenko, L.I.
 2006
 9 4-5 p. 520-524
5 p.
 artikel
                             81 gevonden resultaten
 
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