|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 80 of 81 found articles
| Title: |
Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality |
| Author: |
Leys, F.E. Bonzom, R. Kaczer, B. Janssens, T. Vandervorst, W. De Jaeger, B. Van Steenbergen, J. Martens, K. Hellin, D. Rip, J. Dilliway, G. Delabie, A. Zimmerman, P. Houssa, M. Theuwis, A. Loo, R. Meuris, M. Caymax, M. Heyns, M.M. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 9 (2006) nr. 4-5 pages 6 p. |
| Year: |
2006 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 80 of 81 found articles
| << previous | next >> |