nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of the structure and defects in heteroepitaxial Si/CoSi2/Si layers produced by ion beam synthesis and rapid thermal annealing
|
Reeson, Karen J. |
|
1992 |
12 |
1-2 |
p. 123-127 5 p. |
artikel |
2 |
An attempt to prepare La2CuO4 by high energy ion-beam mixing
|
Desimoni, Judith |
|
1992 |
12 |
1-2 |
p. 13-16 4 p. |
artikel |
3 |
Angular dependence of silicon oxide formation and gold segregation due to low-energy O2 + implantation
|
Menzel, N. |
|
1992 |
12 |
1-2 |
p. 91-95 5 p. |
artikel |
4 |
A semi-empirical model to predict the layer parameters of (SIMOX) structures
|
Li, Y. |
|
1992 |
12 |
1-2 |
p. 77-81 5 p. |
artikel |
5 |
Author index of volume 12
|
|
|
1992 |
12 |
1-2 |
p. 213-214 2 p. |
artikel |
6 |
Characterization by spectroscopic ellipsometry of buried layer structures in silicon formed by ion beam synthesis
|
Vanhellemont, Jan |
|
1992 |
12 |
1-2 |
p. 165-172 8 p. |
artikel |
7 |
Characterization of metal impurities in silicon-on-insulator material
|
Frey, L. |
|
1992 |
12 |
1-2 |
p. 195-198 4 p. |
artikel |
8 |
Characterization of oxygen-ion-implanted silicon using spectroscopic ellipsometry and transmission electron microscopy
|
Lynch, S. |
|
1992 |
12 |
1-2 |
p. 173-176 4 p. |
artikel |
9 |
Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and Si 1−x Ge x/Si(100)
|
Vancauwenberghe, O. |
|
1992 |
12 |
1-2 |
p. 97-101 5 p. |
artikel |
10 |
Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy
|
Lohner, T. |
|
1992 |
12 |
1-2 |
p. 177-184 8 p. |
artikel |
11 |
Damage created in silicon by 1 MeV O+ ions as a function of beam power
|
Grob, A. |
|
1992 |
12 |
1-2 |
p. 1-5 5 p. |
artikel |
12 |
Defects in SIMOX structures: some process dependence
|
Margail, J. |
|
1992 |
12 |
1-2 |
p. 27-36 10 p. |
artikel |
13 |
Development of second generation oxygen implanter
|
Guerra, Michael A. |
|
1992 |
12 |
1-2 |
p. 145-148 4 p. |
artikel |
14 |
Dynamic modelling of high dose oxygen profiles in SIMOX substrates
|
Bussmann, U. |
|
1992 |
12 |
1-2 |
p. 73-76 4 p. |
artikel |
15 |
Editorial Board
|
|
|
1992 |
12 |
1-2 |
p. iii- 1 p. |
artikel |
16 |
Electric field dependent paramagnetic defect creation in single-step high dose oxygen implanted SIMOX films
|
Leray, J.-L. |
|
1992 |
12 |
1-2 |
p. 153-156 4 p. |
artikel |
17 |
Evolution of buried compound layers formed by ion implantation
|
White, Alice E. |
|
1992 |
12 |
1-2 |
p. 107-114 8 p. |
artikel |
18 |
Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon
|
Kilner, J.A. |
|
1992 |
12 |
1-2 |
p. 83-89 7 p. |
artikel |
19 |
Formation of CoSi2 in SIMOX wafers by high dose cobalt implantation
|
Sjoreen, T.P. |
|
1992 |
12 |
1-2 |
p. 129-133 5 p. |
artikel |
20 |
Formation of CoSi2/Si layer systems by Co+ double implantation
|
Witzmann, A. |
|
1992 |
12 |
1-2 |
p. 139-143 5 p. |
artikel |
21 |
Ion beam synthesis of buried epitaxial FeSi2
|
Radermacher, K. |
|
1992 |
12 |
1-2 |
p. 115-118 4 p. |
artikel |
22 |
Ion beam synthesis of buried FeSi2 in (100) silicon
|
Panknin, D. |
|
1992 |
12 |
1-2 |
p. 119-122 4 p. |
artikel |
23 |
Ion-beam synthesis of new phases in silicon interpreted as the decay of a supersaturated solid solution
|
Danilin, A.B. |
|
1992 |
12 |
1-2 |
p. 17-19 3 p. |
artikel |
24 |
Ion beam synthesis of Si3N4 amorphous buried layers
|
Belogorokhov, A.I. |
|
1992 |
12 |
1-2 |
p. 61-62 2 p. |
artikel |
25 |
Ion-implanted buried nitride layers in silicon
|
Olofsson, Rune |
|
1992 |
12 |
1-2 |
p. 161-164 4 p. |
artikel |
26 |
Low energy, oxygen dose optimization for thin film separation by implanted oxygen
|
Robinson, A.K. |
|
1992 |
12 |
1-2 |
p. 41-45 5 p. |
artikel |
27 |
Mesotaxy by nickel diffusion into a buried amorphous silicon layer
|
Erokhin, Yu.N. |
|
1992 |
12 |
1-2 |
p. 103-106 4 p. |
artikel |
28 |
Minimum oxygen dose for reliable application of SIMOX
|
Badenes, G. |
|
1992 |
12 |
1-2 |
p. 149-151 3 p. |
artikel |
29 |
Non-destructive characterization of thin film SIMOX structures using microscope spectrophotometry
|
Criddle, Alan J. |
|
1992 |
12 |
1-2 |
p. 185-190 6 p. |
artikel |
30 |
Permeable-base transistors with ion-implanted CoSi2 gate
|
Schüppen, A. |
|
1992 |
12 |
1-2 |
p. 157-160 4 p. |
artikel |
31 |
Point contact pseudo-metal/oxide/semiconductor transistor in as-grown silicon on insulator wafers
|
Williams, Stephen |
|
1992 |
12 |
1-2 |
p. 191-194 4 p. |
artikel |
32 |
Preface
|
Hemment, P.L.F. |
|
1992 |
12 |
1-2 |
p. v- 1 p. |
artikel |
33 |
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation
|
Lindner, J.K.N. |
|
1992 |
12 |
1-2 |
p. 7-11 5 p. |
artikel |
34 |
Si0.57Ge0.43 alloy layers implanted with oxygen: sputtering yields and atomic composition depth profiles
|
Zhang, J.P. |
|
1992 |
12 |
1-2 |
p. 21-26 6 p. |
artikel |
35 |
Sponsors
|
|
|
1992 |
12 |
1-2 |
p. vii- 1 p. |
artikel |
36 |
Structure and properties of silicon nitride and Si x Ge 1−x nitride prepared by direct low energy ion beam nitridation
|
Hellman, O.C. |
|
1992 |
12 |
1-2 |
p. 53-59 7 p. |
artikel |
37 |
Study of silicon-on-insulator structures formed by low dose oxygen and nitrogen implantation
|
Wong, J.K.Y. |
|
1992 |
12 |
1-2 |
p. 67-71 5 p. |
artikel |
38 |
Study of the growth kinetics of oxidation-induced stacking faults in separation by implanted oxygen structures using a new chemical etching process
|
Tsoukalas, D. |
|
1992 |
12 |
1-2 |
p. 209-211 3 p. |
artikel |
39 |
Subject index of volume 12
|
|
|
1992 |
12 |
1-2 |
p. 215-218 4 p. |
artikel |
40 |
Suppression of oxidation stacking faults in silicon separation by oxygen
|
Guillemot, N. |
|
1992 |
12 |
1-2 |
p. 47-51 5 p. |
artikel |
41 |
Synthesis of oxides in Si0.5Ge0.5 alloy by high dose oxygen ion implantation
|
Castle, J.E. |
|
1992 |
12 |
1-2 |
p. 199-203 5 p. |
artikel |
42 |
Synthesis of thin buried CoSi2 layers by low energy cobalt implantation
|
Jebasinski, R. |
|
1992 |
12 |
1-2 |
p. 135-138 4 p. |
artikel |
43 |
The buried stacked insulator—a new silicon on insulator structure formed by ion beam synthesis
|
Skorupa, W. |
|
1992 |
12 |
1-2 |
p. 63-66 4 p. |
artikel |
44 |
The effect of dose and temperature on the as-implanted microstructure of oxygen-implanted silicon
|
Hatzopoulos, N. |
|
1992 |
12 |
1-2 |
p. 37-40 4 p. |
artikel |
45 |
Variations in thermal SiO2 and buried SiO2 formed by oxygen implantation revealed by chemical etch rates in HF solutions as a function of thickness
|
Vanheusden, K. |
|
1992 |
12 |
1-2 |
p. 205-208 4 p. |
artikel |