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                             45 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analysis of the structure and defects in heteroepitaxial Si/CoSi2/Si layers produced by ion beam synthesis and rapid thermal annealing Reeson, Karen J.
1992
12 1-2 p. 123-127
5 p.
artikel
2 An attempt to prepare La2CuO4 by high energy ion-beam mixing Desimoni, Judith
1992
12 1-2 p. 13-16
4 p.
artikel
3 Angular dependence of silicon oxide formation and gold segregation due to low-energy O2 + implantation Menzel, N.
1992
12 1-2 p. 91-95
5 p.
artikel
4 A semi-empirical model to predict the layer parameters of (SIMOX) structures Li, Y.
1992
12 1-2 p. 77-81
5 p.
artikel
5 Author index of volume 12 1992
12 1-2 p. 213-214
2 p.
artikel
6 Characterization by spectroscopic ellipsometry of buried layer structures in silicon formed by ion beam synthesis Vanhellemont, Jan
1992
12 1-2 p. 165-172
8 p.
artikel
7 Characterization of metal impurities in silicon-on-insulator material Frey, L.
1992
12 1-2 p. 195-198
4 p.
artikel
8 Characterization of oxygen-ion-implanted silicon using spectroscopic ellipsometry and transmission electron microscopy Lynch, S.
1992
12 1-2 p. 173-176
4 p.
artikel
9 Comparative study of low energy ion beam oxidation of Si(100), Ge/Si(100) and Si 1−x Ge x/Si(100) Vancauwenberghe, O.
1992
12 1-2 p. 97-101
5 p.
artikel
10 Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy Lohner, T.
1992
12 1-2 p. 177-184
8 p.
artikel
11 Damage created in silicon by 1 MeV O+ ions as a function of beam power Grob, A.
1992
12 1-2 p. 1-5
5 p.
artikel
12 Defects in SIMOX structures: some process dependence Margail, J.
1992
12 1-2 p. 27-36
10 p.
artikel
13 Development of second generation oxygen implanter Guerra, Michael A.
1992
12 1-2 p. 145-148
4 p.
artikel
14 Dynamic modelling of high dose oxygen profiles in SIMOX substrates Bussmann, U.
1992
12 1-2 p. 73-76
4 p.
artikel
15 Editorial Board 1992
12 1-2 p. iii-
1 p.
artikel
16 Electric field dependent paramagnetic defect creation in single-step high dose oxygen implanted SIMOX films Leray, J.-L.
1992
12 1-2 p. 153-156
4 p.
artikel
17 Evolution of buried compound layers formed by ion implantation White, Alice E.
1992
12 1-2 p. 107-114
8 p.
artikel
18 Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon Kilner, J.A.
1992
12 1-2 p. 83-89
7 p.
artikel
19 Formation of CoSi2 in SIMOX wafers by high dose cobalt implantation Sjoreen, T.P.
1992
12 1-2 p. 129-133
5 p.
artikel
20 Formation of CoSi2/Si layer systems by Co+ double implantation Witzmann, A.
1992
12 1-2 p. 139-143
5 p.
artikel
21 Ion beam synthesis of buried epitaxial FeSi2 Radermacher, K.
1992
12 1-2 p. 115-118
4 p.
artikel
22 Ion beam synthesis of buried FeSi2 in (100) silicon Panknin, D.
1992
12 1-2 p. 119-122
4 p.
artikel
23 Ion-beam synthesis of new phases in silicon interpreted as the decay of a supersaturated solid solution Danilin, A.B.
1992
12 1-2 p. 17-19
3 p.
artikel
24 Ion beam synthesis of Si3N4 amorphous buried layers Belogorokhov, A.I.
1992
12 1-2 p. 61-62
2 p.
artikel
25 Ion-implanted buried nitride layers in silicon Olofsson, Rune
1992
12 1-2 p. 161-164
4 p.
artikel
26 Low energy, oxygen dose optimization for thin film separation by implanted oxygen Robinson, A.K.
1992
12 1-2 p. 41-45
5 p.
artikel
27 Mesotaxy by nickel diffusion into a buried amorphous silicon layer Erokhin, Yu.N.
1992
12 1-2 p. 103-106
4 p.
artikel
28 Minimum oxygen dose for reliable application of SIMOX Badenes, G.
1992
12 1-2 p. 149-151
3 p.
artikel
29 Non-destructive characterization of thin film SIMOX structures using microscope spectrophotometry Criddle, Alan J.
1992
12 1-2 p. 185-190
6 p.
artikel
30 Permeable-base transistors with ion-implanted CoSi2 gate Schüppen, A.
1992
12 1-2 p. 157-160
4 p.
artikel
31 Point contact pseudo-metal/oxide/semiconductor transistor in as-grown silicon on insulator wafers Williams, Stephen
1992
12 1-2 p. 191-194
4 p.
artikel
32 Preface Hemment, P.L.F.
1992
12 1-2 p. v-
1 p.
artikel
33 Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation Lindner, J.K.N.
1992
12 1-2 p. 7-11
5 p.
artikel
34 Si0.57Ge0.43 alloy layers implanted with oxygen: sputtering yields and atomic composition depth profiles Zhang, J.P.
1992
12 1-2 p. 21-26
6 p.
artikel
35 Sponsors 1992
12 1-2 p. vii-
1 p.
artikel
36 Structure and properties of silicon nitride and Si x Ge 1−x nitride prepared by direct low energy ion beam nitridation Hellman, O.C.
1992
12 1-2 p. 53-59
7 p.
artikel
37 Study of silicon-on-insulator structures formed by low dose oxygen and nitrogen implantation Wong, J.K.Y.
1992
12 1-2 p. 67-71
5 p.
artikel
38 Study of the growth kinetics of oxidation-induced stacking faults in separation by implanted oxygen structures using a new chemical etching process Tsoukalas, D.
1992
12 1-2 p. 209-211
3 p.
artikel
39 Subject index of volume 12 1992
12 1-2 p. 215-218
4 p.
artikel
40 Suppression of oxidation stacking faults in silicon separation by oxygen Guillemot, N.
1992
12 1-2 p. 47-51
5 p.
artikel
41 Synthesis of oxides in Si0.5Ge0.5 alloy by high dose oxygen ion implantation Castle, J.E.
1992
12 1-2 p. 199-203
5 p.
artikel
42 Synthesis of thin buried CoSi2 layers by low energy cobalt implantation Jebasinski, R.
1992
12 1-2 p. 135-138
4 p.
artikel
43 The buried stacked insulator—a new silicon on insulator structure formed by ion beam synthesis Skorupa, W.
1992
12 1-2 p. 63-66
4 p.
artikel
44 The effect of dose and temperature on the as-implanted microstructure of oxygen-implanted silicon Hatzopoulos, N.
1992
12 1-2 p. 37-40
4 p.
artikel
45 Variations in thermal SiO2 and buried SiO2 formed by oxygen implantation revealed by chemical etch rates in HF solutions as a function of thickness Vanheusden, K.
1992
12 1-2 p. 205-208
4 p.
artikel
                             45 gevonden resultaten
 
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