Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy
Titel:
Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy
Auteur:
Lohner, T. Skorupa, W. Fried, M. Vedam, K. Nguyen, N. Grötzschel, R. Bartsch, H. Gyulai, J.
Verschenen in:
Materials science and engineering. B, Solid-state materials for advanced technology