| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of three techniques for profiling ultra-shallow p+-n junctions
|
Felch, S.B.
|
|
1993
|
74 |
1-2 |
p. 156-159
4 p.
|
artikel
|
| 2 |
Al metallization by cluster beam and physical vapor deposition on heavily implanted Si(100) surfaces
|
Current, Michael I.
|
|
1993
|
74 |
1-2 |
p. 181-185
5 p.
|
artikel
|
| 3 |
Aluminides and silicides formation by ion beam mixing of multilayers
|
Baumvol, I.J.R.
|
|
1993
|
74 |
1-2 |
p. 98-104
7 p.
|
artikel
|
| 4 |
A method and apparatus for surface modification by gas-cluster ion impact
|
Northby, J.A.
|
|
1993
|
74 |
1-2 |
p. 336-340
5 p.
|
artikel
|
| 5 |
A 2 MV heavy ion Van de Graaff implanter for research and development
|
Hemment, P.L.F.
|
|
1993
|
74 |
1-2 |
p. 27-31
5 p.
|
artikel
|
| 6 |
A new type of silicon-on-insulator with a perfect surface silicon layer
|
Jianming Li,
|
|
1993
|
74 |
1-2 |
p. 204-205
2 p.
|
artikel
|
| 7 |
A novel delineation technique for 2D-profiling of dopants in crystalline silicon
|
Gong, L.
|
|
1993
|
74 |
1-2 |
p. 186-190
5 p.
|
artikel
|
| 8 |
Application of a large area ion doping technique to a-Si:H TFT for LCD
|
Akihisa Yoshida,
|
|
1993
|
74 |
1-2 |
p. 331-335
5 p.
|
artikel
|
| 9 |
B diffusion in Si predamaged with Si+ or Ge+ and preannealed at 200–1000°C
|
Masataka Kase,
|
|
1993
|
74 |
1-2 |
p. 75-79
5 p.
|
artikel
|
| 10 |
Beam defocusing for channeling reduction
|
Wood, C.
|
|
1993
|
74 |
1-2 |
p. 123-126
4 p.
|
artikel
|
| 11 |
Carbon negative ion implantation into silicon
|
Junzo Ishikawa,
|
|
1993
|
74 |
1-2 |
p. 118-122
5 p.
|
artikel
|
| 12 |
Charging studies using the CHARM2 wafer surface charging monitor
|
Lukaszek, W.
|
|
1993
|
74 |
1-2 |
p. 301-305
5 p.
|
artikel
|
| 13 |
Committee, sponsors and exhibitors
|
|
|
1993
|
74 |
1-2 |
p. ix-
1 p.
|
artikel
|
| 14 |
Computer simulation of SIMOX and SIMNI formed by low-energy ion implantation
|
Zuoyu, Shi
|
|
1993
|
74 |
1-2 |
p. 210-212
3 p.
|
artikel
|
| 15 |
Control of the buried SiO2 layer thickness and Si defect density in SIMOX substrates — structural investigation and process optimisation
|
Marsh, C.D.
|
|
1993
|
74 |
1-2 |
p. 197-203
7 p.
|
artikel
|
| 16 |
Damage accumulation and amorphization in GaAs-AlGaAs structures
|
Williams, J.S.
|
|
1993
|
74 |
1-2 |
p. 80-83
4 p.
|
artikel
|
| 17 |
Damage analysis and engineering for ion implantation in ULSI process
|
Morio Inoue,
|
|
1993
|
74 |
1-2 |
p. 7-10
4 p.
|
artikel
|
| 18 |
Damage and its rapid thermal annealing kinetics in Ar+ ion implanted Cz silicon
|
Hahn, S.
|
|
1993
|
74 |
1-2 |
p. 275-278
4 p.
|
artikel
|
| 19 |
Damage depth profiles for high energy ion implanted silicon
|
Tohru Hara,
|
|
1993
|
74 |
1-2 |
p. 191-196
6 p.
|
artikel
|
| 20 |
Defect engineering of p+-junctions by multiple-species ion implantation
|
Current, M.I.
|
|
1993
|
74 |
1-2 |
p. 175-180
6 p.
|
artikel
|
| 21 |
Defect formation in high dose oxygen implanted silicon
|
Venables, D.
|
|
1993
|
74 |
1-2 |
p. 65-69
5 p.
|
artikel
|
| 22 |
Diffusion and lifetime engineering in silicon
|
Coffa, S.
|
|
1993
|
74 |
1-2 |
p. 47-52
6 p.
|
artikel
|
| 23 |
Editorial
|
Downey, Daniel F.
|
|
1993
|
74 |
1-2 |
p. vii-viii
nvt p.
|
artikel
|
| 24 |
Editorial Board
|
|
|
1993
|
74 |
1-2 |
p. ii-iii
nvt p.
|
artikel
|
| 25 |
Electrical characterization of thin film SIMOX structures
|
Zhu Wenhua,
|
|
1993
|
74 |
1-2 |
p. 218-221
4 p.
|
artikel
|
| 26 |
Erbium implantation in optical microcavities for controlled spontaneous emission
|
Vredenberg, A.M.
|
|
1993
|
74 |
1-2 |
p. 84-88
5 p.
|
artikel
|
| 27 |
Evaluation of Al ion implanted 6H-SiC single crystals
|
Nakata, T.
|
|
1993
|
74 |
1-2 |
p. 131-133
3 p.
|
artikel
|
| 28 |
Evaluation of ion implantation charging by using EEPROM
|
Norishige Aoki,
|
|
1993
|
74 |
1-2 |
p. 306-310
5 p.
|
artikel
|
| 29 |
Formation of buried iron-cobalt-silicide layers by high dose implantation
|
Panknin, D.
|
|
1993
|
74 |
1-2 |
p. 213-217
5 p.
|
artikel
|
| 30 |
Formation of excellent shallow n+ junctions by As+ implantation into thin CoSi films on Si substrate
|
Lin, C.T.
|
|
1993
|
74 |
1-2 |
p. 147-150
4 p.
|
artikel
|
| 31 |
High energy implants of aluminum in Czochralski and floating zone grown silicon substrates
|
La Ferla, A.
|
|
1993
|
74 |
1-2 |
p. 109-112
4 p.
|
artikel
|
| 32 |
High Miller index channeling in silicon substrates
|
Simonton, Robert B.
|
|
1993
|
74 |
1-2 |
p. 142-146
5 p.
|
artikel
|
| 33 |
High-voltage implantation facility at GM Research
|
Malaczynski, Gerard W.
|
|
1993
|
74 |
1-2 |
p. 13-17
5 p.
|
artikel
|
| 34 |
IIT-92 session chairmen
|
|
|
1993
|
74 |
1-2 |
p. x-
1 p.
|
artikel
|
| 35 |
Implanted standards for detection of transition metal contamination of silicon surfaces
|
Jacobson, D.C.
|
|
1993
|
74 |
1-2 |
p. 281-283
3 p.
|
artikel
|
| 36 |
Implants of aluminum into silicon
|
Galvagno, G.
|
|
1993
|
74 |
1-2 |
p. 105-108
4 p.
|
artikel
|
| 37 |
Improved gauge capability for ion implant monitors using temperature compensation for resistivity measurements
|
Johnson, Walter H.
|
|
1993
|
74 |
1-2 |
p. 229-233
5 p.
|
artikel
|
| 38 |
Influence of point defects on formation of fluorine bubbles and characterization of defects in BF2 + implanted silicon
|
Chu, C.H.
|
|
1993
|
74 |
1-2 |
p. 138-141
4 p.
|
artikel
|
| 39 |
Insulator structures obtained by high dose nitrogen implantation into aluminium on silicon
|
Chenglu, Lin
|
|
1993
|
74 |
1-2 |
p. 206-209
4 p.
|
artikel
|
| 40 |
Integration of a particle monitor into the control system for an ion implanter
|
Myers, Steven
|
|
1993
|
74 |
1-2 |
p. 243-247
5 p.
|
artikel
|
| 41 |
Interfacial reactions of titanium thin films on ion implanted (001) Si
|
Liauh, H.R.
|
|
1993
|
74 |
1-2 |
p. 134-137
4 p.
|
artikel
|
| 42 |
Ion beam application for improved polymer surface properties
|
Lee, E.H.
|
|
1993
|
74 |
1-2 |
p. 326-330
5 p.
|
artikel
|
| 43 |
Ion beam synthesis of α and β FeSi2 layers
|
Hunt, Tim D.
|
|
1993
|
74 |
1-2 |
p. 60-64
5 p.
|
artikel
|
| 44 |
Ion implantation for large-area optoelectronics on glass substrates
|
Shuhei Tanaka,
|
|
1993
|
74 |
1-2 |
p. 317-321
5 p.
|
artikel
|
| 45 |
Ion implantation in future MOS technology
|
Tasch, Al F.
|
|
1993
|
74 |
1-2 |
p. 3-6
4 p.
|
artikel
|
| 46 |
Ion implantation in polycrystalline silicon thin film transistors
|
Shen, D.S.
|
|
1993
|
74 |
1-2 |
p. 113-117
5 p.
|
artikel
|
| 47 |
Iron gettering and doping in silicon due to MeV carbon implantation
|
Skorupa, W.
|
|
1993
|
74 |
1-2 |
p. 70-74
5 p.
|
artikel
|
| 48 |
Irradiation effects of gas-cluster CO2 ion beams on Si
|
Yamada, I.
|
|
1993
|
74 |
1-2 |
p. 341-346
6 p.
|
artikel
|
| 49 |
Low dose monitors — the movements and causes
|
Cherekdjian, S.
|
|
1993
|
74 |
1-2 |
p. 259-262
4 p.
|
artikel
|
| 50 |
Low energy ion implantation and its characterization and processing
|
Downey, Daniel F.
|
|
1993
|
74 |
1-2 |
p. 160-169
10 p.
|
artikel
|
| 51 |
Low energy ion modification of thin films
|
Gibson, U.J.
|
|
1993
|
74 |
1-2 |
p. 322-325
4 p.
|
artikel
|
| 52 |
Materials and device issues in the formation of sub-100-nm junctions
|
Osburn, C.M.
|
|
1993
|
74 |
1-2 |
p. 53-59
7 p.
|
artikel
|
| 53 |
Metal-sheet-beam formation using an impregnated electrode-type liquid-metal ion source with a linear array of emission points
|
Yasuhito Gotoh,
|
|
1993
|
74 |
1-2 |
p. 35-38
4 p.
|
artikel
|
| 54 |
Modification of time dependence in thermal wave signal from ion implanted wafers
|
Pearce, N.O.
|
|
1993
|
74 |
1-2 |
p. 263-265
3 p.
|
artikel
|
| 55 |
Performance characteristics of the Genus Inc. 1510 high energy ion implantation system
|
O'Connor, John P.
|
|
1993
|
74 |
1-2 |
p. 18-26
9 p.
|
artikel
|
| 56 |
Performance characteristics of the NV-20A high current ion implantation system
|
Farley, Marvin
|
|
1993
|
74 |
1-2 |
p. 271-274
4 p.
|
artikel
|
| 57 |
Positron annihilation study of P implanted Si
|
Asoka-Kumar, P.
|
|
1993
|
74 |
1-2 |
p. 89-93
5 p.
|
artikel
|
| 58 |
Pressure compensated dose control in high current ion implantation systems
|
McCarron, David
|
|
1993
|
74 |
1-2 |
p. 238-242
5 p.
|
artikel
|
| 59 |
Pressure compensation for high current ion implanters
|
Stack, Andrew P.
|
|
1993
|
74 |
1-2 |
p. 248-251
4 p.
|
artikel
|
| 60 |
Process optimisation for direct formation of device worthy thin film SIMOX structures using 90 keV oxygen implantation
|
Nejim, A.
|
|
1993
|
74 |
1-2 |
p. 170-174
5 p.
|
artikel
|
| 61 |
Progress in wafer charging and charge neutralization
|
Mack, M.E.
|
|
1993
|
74 |
1-2 |
p. 287-290
4 p.
|
artikel
|
| 62 |
Reliability issues concerning thin gate SiO2 and SiO2/Si interface for ULSI applications
|
Ma, T.P.
|
|
1993
|
74 |
1-2 |
p. 295-300
6 p.
|
artikel
|
| 63 |
Resist preparation and removal techniques for high dose implantation on 200 mm wafers
|
McOmber, J.I.
|
|
1993
|
74 |
1-2 |
p. 266-270
5 p.
|
artikel
|
| 64 |
Rf driven multicusp ion source for pulsed or steady-state ion beam production
|
Leung, K.N.
|
|
1993
|
74 |
1-2 |
p. 291-294
4 p.
|
artikel
|
| 65 |
SIMOX material manufacturability
|
Margail, J.
|
|
1993
|
74 |
1-2 |
p. 41-46
6 p.
|
artikel
|
| 66 |
Solid phase epitaxial regrowth of ion-implanted amorphous silicon characterized by differential reflectometry
|
Feng, S.W.
|
|
1993
|
74 |
1-2 |
p. 151-155
5 p.
|
artikel
|
| 67 |
Sources of variation in therma wave measurements of ion implanted wafers
|
Kamenitsa, Dennis E.
|
|
1993
|
74 |
1-2 |
p. 234-237
4 p.
|
artikel
|
| 68 |
Statistical process analysis of ion implantation
|
Yarling, C.B.
|
|
1993
|
74 |
1-2 |
p. 252-256
5 p.
|
artikel
|
| 69 |
Structural defects and their electrical activity in germanium implanted silicon
|
Zhang, J.P.
|
|
1993
|
74 |
1-2 |
p. 127-130
4 p.
|
artikel
|
| 70 |
The relationship between sheet resistance and ion implant dosimetry
|
Stack, Andrew P.
|
|
1993
|
74 |
1-2 |
p. 257-258
2 p.
|
artikel
|
| 71 |
The use of multi-species implantation for carrier profile control in GaAs MESFETs fabricated using silicon ion implantation
|
Gwilliam, R.M.
|
|
1993
|
74 |
1-2 |
p. 94-97
4 p.
|
artikel
|
| 72 |
Two-dimensional implantation profile simulator — RETRO
|
Peng, C-T.John
|
|
1993
|
74 |
1-2 |
p. 222-225
4 p.
|
artikel
|
| 73 |
Wafer charging monitored by high frequency and quasi-static C−V measurements
|
En, Bill
|
|
1993
|
74 |
1-2 |
p. 311-313
3 p.
|
artikel
|
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