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                             145 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A 1 and 2 MV ion implantation facility Koudijs, R.
 1987
 21 1-4 p. 296-299
4 p.
 artikel
2 Absolute determination of 1012 cm−2 as in Si by RBS microanalysis Abel, F.
 1987
 21 1-4 p. 77-78
2 p.
 artikel
3 Acceleration column for a high current oxygen implanter Kaim, R.E.
 1987
 21 1-4 p. 321-323
3 p.
 artikel
4 A generalized mathematical model for wafer cooling with gas Evans, David C.
 1987
 21 1-4 p. 385-390
6 p.
 artikel
5 A high current, high voltage oxygen ion implanter Ruffell, John P.
 1987
 21 1-4 p. 229-234
6 p.
 artikel
6 A high current injector for tandem accelerators O'Connor, John P.
 1987
 21 1-4 p. 334-338
5 p.
 artikel
7 A high throughput end station of a high current ion implanter Komatsu, K.
 1987
 21 1-4 p. 317-320
4 p.
 artikel
8 A hollow cold cathode multipurpose ion source Mingxiu, Ma
 1987
 21 1-4 p. 182-185
4 p.
 artikel
9 A 400 keV ion accelerator for surface study Uchiyama, T.
 1987
 21 1-4 p. 306-309
4 p.
 artikel
10 A 600 keV research heavy ion implanter Jiang, Xin Yuan
 1987
 21 1-4 p. 310-313
4 p.
 artikel
11 Aluminum surface modification by a non-mass-analyzed nitrogen ion beam Ohira, Shigeo
 1987
 21 1-4 p. 588-590
3 p.
 artikel
12 A 100 mA class ion implanter for large scale production of buried oxide SOI wafers Moffatt, S.
 1987
 21 1-4 p. 251-257
7 p.
 artikel
13 A method of surface charge neutralization during ion implantation King, M.L.
 1987
 21 1-4 p. 396-399
4 p.
 artikel
14 Amorphization implants and low temperature rapid thermal processing to form low sheet resistance, shallow junction, boron implanted layers Wilson, S.R.
 1987
 21 1-4 p. 433-437
5 p.
 artikel
15 Analysis of buried layers from high dose oxygen ion implantation Bunker, S.N.
 1987
 21 1-4 p. 148-150
3 p.
 artikel
16 Analytical expressions for the internal and kinetic energy distributions of sputtered clusters and molecules Hoogerbrugge, Ronald
 1987
 21 1-4 p. 37-45
9 p.
 artikel
17 An apparatus for combined vapor deposition and ion implantation to modify the surface properties of metals Margesin, B.
 1987
 21 1-4 p. 566-569
4 p.
 artikel
18 An etch-study of ion implanted SiO2 films Marinescu, Radu
 1987
 21 1-4 p. 428-430
3 p.
 artikel
19 A new computer designed faraday system for high current ion implantation systems Outcault, R.
 1987
 21 1-4 p. 354-359
6 p.
 artikel
20 A new VLSI compatible rapid thermal processing system Aitken, D.
 1987
 21 1-4 p. 622-626
5 p.
 artikel
21 A novel self-aligned oxygen (SALOX) implanted SOI MOSFET device structure Tzeng, J.C.
 1987
 21 1-4 p. 112-115
4 p.
 artikel
22 Application of a 3-D computer simulation code for ion beam extraction with a high current freeman type ion source Katagawa, T.
 1987
 21 1-4 p. 194-197
4 p.
 artikel
23 Applications of SIMOX technology to CMOS LSI and radiation-hardened devices Izumi, K.
 1987
 21 1-4 p. 124-128
5 p.
 artikel
24 Approximate expressions for continuous slowing down approximation ranges of high energy electrons and positrons Pal, P.B.
 1987
 21 1-4 p. 14-19
6 p.
 artikel
25 A simple bevelling technique for the depth-profiling of deuterium in steels Giles, I.S.
 1987
 21 1-4 p. 72-76
5 p.
 artikel
26 A study of wafer and device charging during high current ion implantation Basra, Vijay K.
 1987
 21 1-4 p. 360-365
6 p.
 artikel
27 Author index 1987
 21 1-4 p. 639-648
10 p.
 artikel
28 Basics of ion sources in basic (BOISIB) Ghanbari, E.
 1987
 21 1-4 p. 198-200
3 p.
 artikel
29 11B+ implantation and postimplant anneal studies in Hg1−x Cd x Te Kao, T.-M.
 1987
 21 1-4 p. 578-580
3 p.
 artikel
30 Bridging implant technique to characterize MeV implants Keenan, W.A.
 1987
 21 1-4 p. 563-565
3 p.
 artikel
31 Calendar 1987
 21 1-4 p. 79-81
3 p.
 artikel
32 Charging studies in applied materials precision implant 9000 system Hall, J.Michael
 1987
 21 1-4 p. 350-353
4 p.
 artikel
33 CMOS process review with implications for ion implantation Seidel, T.E.
 1987
 21 1-4 p. 96-103
8 p.
 artikel
34 Committees 1987
 21 1-4 p. vii-viii
nvt p.
 artikel
35 Committees 1987
 21 1-4 p. vi-
1 p.
 artikel
36 Computers and the design of ion beam optical systems White, Nicholas R.
 1987
 21 1-4 p. 339-349
11 p.
 artikel
37 Computer simulations of the ion implantation process in layered materials Cui, Fu-Zhai
 1987
 21 1-4 p. 478-479
2 p.
 artikel
38 Critical aspects of high energy implants for CMOS technology: Channeling effects and masking problems Spinelli, P.
 1987
 21 1-4 p. 452-455
4 p.
 artikel
39 Crystalline state information from secondary ion mass spectrometry Smith, H.E.
 1987
 21 1-4 p. 503-504
2 p.
 artikel
40 Current status of ionized-cluster beam technique: A low energy ion beam deposition Yamada, I.
 1987
 21 1-4 p. 120-123
4 p.
 artikel
41 Damage profiles of MeV implants of Ga and Si in silicon Rai, Amarendra K.
 1987
 21 1-4 p. 466-470
5 p.
 artikel
42 Deep levels induced by focused ion implantation in GaAs Yuba, Yoshihiko
 1987
 21 1-4 p. 151-154
4 p.
 artikel
43 Deep p-type layer formation using Al+ implantation and diffusion into Si Yoshida, Masakatsu
 1987
 21 1-4 p. 483-485
3 p.
 artikel
44 Deposition of boron nitride thin films by ion beam assisted deposition Bricault, R.J.
 1987
 21 1-4 p. 586-587
2 p.
 artikel
45 Design considerations of a VLSI compatible production MeV ion implantation system Turner, Norman
 1987
 21 1-4 p. 285-295
11 p.
 artikel
46 Determination of the implanted dopants distribution by Pearson's function Martan, J.
 1987
 21 1-4 p. 476-477
2 p.
 artikel
47 Development of a 200 kV high current accelerator with post acceleration mass analysis for O+ implantation into silicon Proudfoot, G.
 1987
 21 1-4 p. 300-305
6 p.
 artikel
48 Development of surface topology during ion sputtering of silicon Augulis, L.
 1987
 21 1-4 p. 608-609
2 p.
 artikel
49 Device characteristics of mosfets in MeV implanted substrates Zappe, Hans P.
 1987
 21 1-4 p. 163-167
5 p.
 artikel
50 Discharge of P2+ ions in the beamline of medium current implanters Brack, K.
 1987
 21 1-4 p. 405-409
5 p.
 artikel
51 Dopant redistribution of As-implanted SOI films during rapid thermal annealing Cheng-lu, Lin
 1987
 21 1-4 p. 627-628
2 p.
 artikel
52 Dosing accuracy: A comparison of several experiments Larson, L.A.
 1987
 21 1-4 p. 421-423
3 p.
 artikel
53 Dynamic simulation of ion implantation with damaging processes included Saito, Tsutomu
 1987
 21 1-4 p. 456-459
4 p.
 artikel
54 Editorial Current, Michael
 1987
 21 1-4 p. v-
1 p.
 artikel
55 Editorial Andersen, Hans Henrik
 1987
 21 1-4 p. v-vi
nvt p.
 artikel
56 Editorial Board 1987
 21 1-4 p. ii-
1 p.
 artikel
57 Effect of the target temperature on the surface modification of Cr-deposited Fe by ion beam mixing Wei, Tian
 1987
 21 1-4 p. 597-600
4 p.
 artikel
58 Effects of high energy boron ions implanted in MOSFETs Deng, E.
 1987
 21 1-4 p. 134-141
8 p.
 artikel
59 Electron beam doping in substrates of overlayer Si/substrate GaAs, Si GaAsP and evaporated Ge Si Wada, Takao
 1987
 21 1-4 p. 574-575
2 p.
 artikel
60 End station design and wafer quality control for a high current oxygen implanter Douglas-Hamilton, D.H.
 1987
 21 1-4 p. 324-327
4 p.
 artikel
61 Equipment for ion beam assisted deposition Wolf, G.K.
 1987
 21 1-4 p. 570-573
4 p.
 artikel
62 Finite-angle multiple scattering Winterbon, K.B.
 1987
 21 1-4 p. 1-7
7 p.
 artikel
63 Fission track annealing models and the concept of a single activation energy Virk, H.S.
 1987
 21 1-4 p. 68-71
4 p.
 artikel
64 Formation of shallow P+N junctions by dual F+ B+ implantation Biasse, B.
 1987
 21 1-4 p. 493-495
3 p.
 artikel
65 Generation of oxygen, carbon and metallic ion beams by a compact microwave source Walther, S.R.
 1987
 21 1-4 p. 215-217
3 p.
 artikel
66 High current ion implanter aimed at clean and dust-free production Komatsu, K.
 1987
 21 1-4 p. 235-238
4 p.
 artikel
67 Historical perspectives on ion implantation Gibbons, James F.
 1987
 21 1-4 p. 83-89
7 p.
 artikel
68 Implant uniformity improvement using advanced scanning techniques Myron, Douglas D.
 1987
 21 1-4 p. 410-413
4 p.
 artikel
69 Impregnated-electrode-type liquid metal ion source Ishikawa, J.
 1987
 21 1-4 p. 186-189
4 p.
 artikel
70 Improvement of secondary electron emission characteristics by ion implantation Xiang-huai, Liu
 1987
 21 1-4 p. 595-596
2 p.
 artikel
71 Improvements in dose uniformity on high current ion implantation systems Eddy, R.
 1987
 21 1-4 p. 424-427
4 p.
 artikel
72 Integrated factory interface for the precision implant 9000 ion implanter operator Southwood, P.D.
 1987
 21 1-4 p. 514-517
4 p.
 artikel
73 Intelligent performance optimization for a fully automatic high current ion implantation system Wonson, C.
 1987
 21 1-4 p. 523-525
3 p.
 artikel
74 Ion-beam-induced decomposition of bismuth germanium oxide crystal surfaces Xiqi, Feng
 1987
 21 1-4 p. 576-577
2 p.
 artikel
75 Ion implantation into three-dimensional structures Kakoschke, R.
 1987
 21 1-4 p. 142-147
6 p.
 artikel
76 Ion implant monitoring with thermal wave technology Smith, W.L.
 1987
 21 1-4 p. 537-541
5 p.
 artikel
77 Large diameter ion beam implantation system Matsuda, K.
 1987
 21 1-4 p. 314-316
3 p.
 artikel
78 Latest advances in ion implant optical dosimetry Golin, Jeffrey R.
 1987
 21 1-4 p. 542-549
8 p.
 artikel
79 Layer thicknesses in oxygen implantation of silicon Douglas-Hamilton, D.H.
 1987
 21 1-4 p. 158-162
5 p.
 artikel
80 Maskless ion implantation system for three-dimensional fine doping structures in III–V compound semiconductors Miyauchi, Eizo
 1987
 21 1-4 p. 104-111
8 p.
 artikel
81 Measurement of temperature profiles across single wafers in rapid thermal annealers Pramanik, D.
 1987
 21 1-4 p. 618-621
4 p.
 artikel
82 Measurements of parametric X-rays from relativistic electrons in silicon crystals Adishchev, Yu.N.
 1987
 21 1-4 p. 49-55
7 p.
 artikel
83 MeV-energy B+, P+ and As+ ion implantation into Si Tamura, M.
 1987
 21 1-4 p. 438-446
9 p.
 artikel
84 Microwave ion source for ion implantation Sakudo, N.
 1987
 21 1-4 p. 168-177
10 p.
 artikel
85 200 mm end station for ion beam implanters Taylor, C.
 1987
 21 1-4 p. 224-228
5 p.
 artikel
86 Model of preferential sputtering of multicomponent materials induced by low energy ions Galkute, L.
 1987
 21 1-4 p. 46-48
3 p.
 artikel
87 Monitoring low dose single implanted layers with four-point probe technology Chen, James T.C.
 1987
 21 1-4 p. 526-528
3 p.
 artikel
88 Monte Carlo simulation of recoil range distributions in multilayer GaAs targets Tejwani, M.J.
 1987
 21 1-4 p. 471-475
5 p.
 artikel
89 0.5 μm particulate performance of a batch process implanter Jost, Jonathan
 1987
 21 1-4 p. 372-377
6 p.
 artikel
90 Multi-MeV ion implantation accelerator system Dibitonto, D.
 1987
 21 1-4 p. 155-157
3 p.
 artikel
91 Negative ion source (NIABNIS) and preparation of transparent carbon films by negative carbon ion beam deposition Ishikawa, J.
 1987
 21 1-4 p. 205-208
4 p.
 artikel
92 New dosimetry system for a serial process ion implanter Lundquist, Paul
 1987
 21 1-4 p. 414-420
7 p.
 artikel
93 New ion implantation system with advanced process capabilities Wauk, M.T.
 1987
 21 1-4 p. 280-284
5 p.
 artikel
94 Novel dielectric/silicon planar structures formed by ion beam synthesis Hemment, P.L.F.
 1987
 21 1-4 p. 129-133
5 p.
 artikel
95 Numerical simulation for the discharge mechanism of a TP-D plasma source Takeshiro, Shinichi
 1987
 21 1-4 p. 209-211
3 p.
 artikel
96 Optimization of the ion implantation process Maczka, D.
 1987
 21 1-4 p. 521-522
2 p.
 artikel
97 Planar channeling effects in a batch process ion implanter Liebert, Reuel B.
 1987
 21 1-4 p. 391-395
5 p.
 artikel
98 Plasma compression type hollow cathode ion source Tonegawa, A.
 1987
 21 1-4 p. 212-214
3 p.
 artikel
99 Plasma filament ion source for high current implanter Yabe, E.
 1987
 21 1-4 p. 190-193
4 p.
 artikel
100 PR-80 high current ion implantation machine Kawai, T.
 1987
 21 1-4 p. 239-244
6 p.
 artikel
101 Process control of titanium silicide formation using rapid thermal processing Kermani, A.
 1987
 21 1-4 p. 633-637
5 p.
 artikel
102 Process yield improvements with process control terminal for varian serial ion implanters Higashi, Harry
 1987
 21 1-4 p. 518-520
3 p.
 artikel
103 Production high energy ion implanters using radio frequency acceleration Glavish, H.F.
 1987
 21 1-4 p. 264-269
6 p.
 artikel
104 Production MeV ion implanters for energies from 200 keV to 4 MeV Rathmell, R.D.
 1987
 21 1-4 p. 270-273
4 p.
 artikel
105 Profile studies of MeV ions implanted into Si Wong, H.
 1987
 21 1-4 p. 447-451
5 p.
 artikel
106 Programming of ROMs after metal definition using MEV ion implantation Pramanik, D.
 1987
 21 1-4 p. 116-119
4 p.
 artikel
107 Radio-frequency linear accelerators for ion implanters Glavish, H.F.
 1987
 21 1-4 p. 218-223
6 p.
 artikel
108 Range distributions of MeV implants in silicon II Ingram, David C.
 1987
 21 1-4 p. 460-465
6 p.
 artikel
109 Rapid thermal annealing of arsenic, beryllium and zinc dual implanted AlGaAs Ho, Pin
 1987
 21 1-4 p. 581-583
3 p.
 artikel
110 Recent improvements in double charged ion beam energy purity for serial process ion implanters Kalbfus, C.R.
 1987
 21 1-4 p. 400-404
5 p.
 artikel
111 Recent improvements in the particle performance of a varian 350D ion implanter Milgate, R.
 1987
 21 1-4 p. 381-384
4 p.
 artikel
112 Relaxation of ion implant damage in silicon wafers at room temperature measured by thermal waves and double implant sheet resistance Schuur, John
 1987
 21 1-4 p. 554-558
5 p.
 artikel
113 Repetitive mode pulsed ion implanter with magnetically insulated diode Krafcsik, I.
 1987
 21 1-4 p. 604-607
4 p.
 artikel
114 Robotics and host computer interface for NV-10 high current implanters Garvey, Ellen
 1987
 21 1-4 p. 509-513
5 p.
 artikel
115 RTP shallow junction formation of low energy boron implants into preamorphized silicon Basra, Vijay K.
 1987
 21 1-4 p. 505-508
4 p.
 artikel
116 Sheet resistance monitoring of low dose implants using the double implant technique Smith, A.K.
 1987
 21 1-4 p. 529-536
8 p.
 artikel
117 Shock wave mechanism for cluster emission and organic molecule desorption under heavy ion bombardment Bitensky, I.S.
 1987
 21 1-4 p. 26-36
11 p.
 artikel
118 Some experimental studies on GCr15 steel by nitrogen ion overlap-implantation Jiucheng, Jin
 1987
 21 1-4 p. 610-611
2 p.
 artikel
119 Some problems in particulate acceleration Setvak, M.
 1987
 21 1-4 p. 378-380
3 p.
 artikel
120 Status of IC applications of ion implantation Smith, T.C.
 1987
 21 1-4 p. 90-95
6 p.
 artikel
121 Studies of thin oxides grown by rapid thermal processing Mehta, S.
 1987
 21 1-4 p. 629-632
4 p.
 artikel
122 Study of mechanical strains in implanted silicon slices Domkus, M.
 1987
 21 1-4 p. 480-482
3 p.
 artikel
123 Subject index 1987
 21 1-4 p. 649-653
5 p.
 artikel
124 The effect of helium layers implanted into thin iron foils on transient magnetic fields Simonis, H.J.
 1987
 21 1-4 p. 56-59
4 p.
 artikel
125 The effect of implant species on defect anneal kinetics part II: Arsenic and germanium implantation Jones, Kevin S.
 1987
 21 1-4 p. 499-502
4 p.
 artikel
126 The effect of implant species on defect anneal kinetics part I: Silicon and phosphorus implantation Prussin, S.
 1987
 21 1-4 p. 496-498
3 p.
 artikel
127 The effect of sample temperature on the structure of He+ implanted optical waveguides in LiNbO3 Weiss, B.L.
 1987
 21 1-4 p. 584-585
2 p.
 artikel
128 The electronic stopping and range profile calculations for high energy implantation of phosphorous into silicon Posselt, M.
 1987
 21 1-4 p. 8-13
6 p.
 artikel
129 The MEVVA ion source for high current metal ion implantation Brown, Ian
 1987
 21 1-4 p. 201-204
4 p.
 artikel
130 The precision implant 9000, a new concept in ion implantation systems Steen, L.S.
 1987
 21 1-4 p. 328-333
6 p.
 artikel
131 The precision implant 9000 beam line Aitken, D.
 1987
 21 1-4 p. 274-279
6 p.
 artikel
132 The preparation of i-c films with low ion beams Lirong, Zheng
 1987
 21 1-4 p. 601-603
3 p.
 artikel
133 Thermal wave implant dosimetry for process control on product wafers Wendman, Mark A.
 1987
 21 1-4 p. 559-562
4 p.
 artikel
134 Thermal-wave measurements of ion implanted silicon Kirby, Bradford J.
 1987
 21 1-4 p. 550-553
4 p.
 artikel
135 The scattering of doubly charged ions from surfaces Chapman, G.E.
 1987
 21 1-4 p. 20-25
6 p.
 artikel
136 The use of self-implanted amorphized silicon substrates to eliminate channeling effects in low energy boron implants Simonton, R.B.
 1987
 21 1-4 p. 490-492
3 p.
 artikel
137 The Veeco 4840 automated implant system Scaife, William
 1987
 21 1-4 p. 258-263
6 p.
 artikel
138 0.1% ultra-uniformity in electrostatically scanned ion implantation systems McGuire, Edward
 1987
 21 1-4 p. 431-432
2 p.
 artikel
139 Uniformity characterization of an RTP system Gelpey, Jeffrey C.
 1987
 21 1-4 p. 612-617
6 p.
 artikel
140 Use of ultra-low-energy BF2 + implantation and rapid annealing to avoid channeling effects in shallow junction formation Felch, S.B.
 1987
 21 1-4 p. 486-489
4 p.
 artikel
141 Very high current ECR ion source for an oxygen ion implanter Torii, Yasuhiro
 1987
 21 1-4 p. 178-181
4 p.
 artikel
142 VG-13: A nuclear-track-recording glass detector with uniquely high resolution Price, P.B.
 1987
 21 1-4 p. 60-67
8 p.
 artikel
143 Wafer cooling in a high current ion implanter Benveniste, V.
 1987
 21 1-4 p. 366-371
6 p.
 artikel
144 Wear behaviour of nitrogen implanted stainless steel Shrivastava, Sadhna
 1987
 21 1-4 p. 591-594
4 p.
 artikel
145 XP series high current ion implantation systems for up to 200 mm wafer processing Thayer III, R.Bruce
 1987
 21 1-4 p. 245-250
6 p.
 artikel
                             145 gevonden resultaten
 
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