| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acceleration of clusters, collision induced charge exchange at MeV energies and applications for materials science
|
Ames, F.
|
|
1996
|
112 |
1-4 |
p. 64-67
4 p.
|
artikel
|
| 2 |
A plasma desorption mass spectrometry study of cluster ion formation from group IIA nitrates
|
Ferrell, W.R.
|
|
1996
|
112 |
1-4 |
p. 55-58
4 p.
|
artikel
|
| 3 |
A study of base contact formation in epitaxial Si Si0.88Ge0.12 HBT structures
|
Nejim, A.
|
|
1996
|
112 |
1-4 |
p. 305-310
6 p.
|
artikel
|
| 4 |
Atomic and cluster ion bombardment in the electronic stopping power regime: A thermal spike description
|
Toulemonde, M.
|
|
1996
|
112 |
1-4 |
p. 26-29
4 p.
|
artikel
|
| 5 |
Atomic level smoothing of CVD diamond films by gas cluster ion beam etching
|
Yoshida, Akihisa
|
|
1996
|
112 |
1-4 |
p. 248-251
4 p.
|
artikel
|
| 6 |
Atomic scale investigation of surface modification induced by 215 MeV Ne irradiation on graphite
|
Biró, L.P.
|
|
1996
|
112 |
1-4 |
p. 270-274
5 p.
|
artikel
|
| 7 |
Atomistic study of defect generation mechanisms in Mo W superlattices
|
Carlberg, M.H.
|
|
1996
|
112 |
1-4 |
p. 109-111
3 p.
|
artikel
|
| 8 |
Author index
|
|
|
1996
|
112 |
1-4 |
p. 349-355
7 p.
|
artikel
|
| 9 |
Beam scanning system for the uniformity of implanted doses in a large area
|
Desgardin, P.
|
|
1996
|
112 |
1-4 |
p. 267-269
3 p.
|
artikel
|
| 10 |
Characteristics and peculiarities of surface processing by gas cluster ion beams
|
Yamada, Isao
|
|
1996
|
112 |
1-4 |
p. 242-247
6 p.
|
artikel
|
| 11 |
Characterization of hydrogenated amorphous silicon prepared by ion beam assisted evaporation
|
Hadj Zoubir, N.
|
|
1996
|
112 |
1-4 |
p. 263-266
4 p.
|
artikel
|
| 12 |
Conducting polymer synthesis via ion beam induced precursor conversion
|
Davenas, J.
|
|
1996
|
112 |
1-4 |
p. 120-124
5 p.
|
artikel
|
| 13 |
Damage profiles in as-implanted silicon: fluence dependence
|
Nipoti, R.
|
|
1996
|
112 |
1-4 |
p. 148-151
4 p.
|
artikel
|
| 14 |
Defect creation induced by GeV ions in MgO containing Na precipitates
|
Beranger, M.
|
|
1996
|
112 |
1-4 |
p. 112-115
4 p.
|
artikel
|
| 15 |
Design considerations for plasma immersion ion implantation systems
|
Mändl, S.
|
|
1996
|
112 |
1-4 |
p. 252-254
3 p.
|
artikel
|
| 16 |
Dynamic Monte Carlo simulation of nonlinear damage growth during ion implantation of crystalline silicon
|
Albertazzi, E.
|
|
1996
|
112 |
1-4 |
p. 152-155
4 p.
|
artikel
|
| 17 |
Editorial Board
|
|
|
1996
|
112 |
1-4 |
p. ii-iii
nvt p.
|
artikel
|
| 18 |
Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO2 matrix formed by ion implantation
|
Komoda, T.
|
|
1996
|
112 |
1-4 |
p. 219-222
4 p.
|
artikel
|
| 19 |
Effects of ion irradiations on properties of polyphosphazene-silica composite films
|
Pivin, J.C.
|
|
1996
|
112 |
1-4 |
p. 294-297
4 p.
|
artikel
|
| 20 |
E-MRS'95 Symposium C
|
Hemment, P.L.F.
|
|
1996
|
112 |
1-4 |
p. ix-x
nvt p.
|
artikel
|
| 21 |
E-MRS'95 Symposium J
|
Thomas, J.-P.
|
|
1996
|
112 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 22 |
He implant-damage isolation of MOVPE grown GaAs/InGaP/InGaAsP layers
|
Strusny, H.
|
|
1996
|
112 |
1-4 |
p. 298-300
3 p.
|
artikel
|
| 23 |
Hyperthermal chemistry and cluster collisions
|
Campbell, E.E.B.
|
|
1996
|
112 |
1-4 |
p. 48-54
7 p.
|
artikel
|
| 24 |
Implanted buried layers and interfaces: Application in the new area of very- and ultra-high efficiency solar cells
|
Kuznicki, Z.T.
|
|
1996
|
112 |
1-4 |
p. 188-191
4 p.
|
artikel
|
| 25 |
Improved characterization of fully-depleted SOI wafers by pseudo-MOS transistor
|
Ionescu, A.M.
|
|
1996
|
112 |
1-4 |
p. 228-232
5 p.
|
artikel
|
| 26 |
Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon
|
Biró, L.P.
|
|
1996
|
112 |
1-4 |
p. 173-176
4 p.
|
artikel
|
| 27 |
Investigation of damage formation by gas cluster ion bombardment
|
Matsuo, Jiro
|
|
1996
|
112 |
1-4 |
p. 89-93
5 p.
|
artikel
|
| 28 |
Investigation of the damage induced by 200 keV Ge+ ion implantation in 6HSiC
|
Pacaud, Y.
|
|
1996
|
112 |
1-4 |
p. 321-324
4 p.
|
artikel
|
| 29 |
Ion beam analysis of plasma immersion implanted silicon for solar cell fabrication
|
Khánh, N.Q.
|
|
1996
|
112 |
1-4 |
p. 259-262
4 p.
|
artikel
|
| 30 |
Ion beam assisted recrystallization of SiC Si structures
|
Pérez-Rodríguez, A.
|
|
1996
|
112 |
1-4 |
p. 334-337
4 p.
|
artikel
|
| 31 |
Ion beam synthesis by tungsten-implantation into 6H-silicon carbide
|
Weishart, H.
|
|
1996
|
112 |
1-4 |
p. 338-341
4 p.
|
artikel
|
| 32 |
Ion beam synthesis of β-SiC at 950°C and structural characterization
|
Frangis, N.
|
|
1996
|
112 |
1-4 |
p. 325-329
5 p.
|
artikel
|
| 33 |
Ion implantation induced damage in relaxed Si0.75Ge0.25
|
Priolo, F.
|
|
1996
|
112 |
1-4 |
p. 301-304
4 p.
|
artikel
|
| 34 |
Ion implanted silicides studies by frequency noise level measurements
|
Stojanovic, M.
|
|
1996
|
112 |
1-4 |
p. 192-195
4 p.
|
artikel
|
| 35 |
Kinetics of impurity gettering on buried defects created by MeV argon implantation
|
Grob, A.
|
|
1996
|
112 |
1-4 |
p. 169-172
4 p.
|
artikel
|
| 36 |
Lateral implantation dose measurements of plasma immersion ion implanted non-planar samples
|
Hartmann, J.
|
|
1996
|
112 |
1-4 |
p. 255-258
4 p.
|
artikel
|
| 37 |
Layer and interface analysis of ultra thin ion beam produced silicon nitride layers by NRA and TEM
|
Markwitz, A.
|
|
1996
|
112 |
1-4 |
p. 284-288
5 p.
|
artikel
|
| 38 |
Modification of magnetron sputtered a-Si1−x C x:H films by implantation of Ge+
|
Tzenov, N.
|
|
1996
|
112 |
1-4 |
p. 342-347
6 p.
|
artikel
|
| 39 |
Molecular dynamics study of shock wave generation by cluster impact on solid targets
|
Insepov, Z.
|
|
1996
|
112 |
1-4 |
p. 16-22
7 p.
|
artikel
|
| 40 |
Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions
|
Rubio, J.E.
|
|
1996
|
112 |
1-4 |
p. 156-159
4 p.
|
artikel
|
| 41 |
Molecule and cluster bombardment: energy loss, trajectories, and collision cascades
|
Sigmund, P.
|
|
1996
|
112 |
1-4 |
p. 1-11
11 p.
|
artikel
|
| 42 |
N+ ion implantation effects on microhardness and adhesion in TiO2 films
|
Fukushima, K.
|
|
1996
|
112 |
1-4 |
p. 116-119
4 p.
|
artikel
|
| 43 |
Nonlinear transmission sputtering
|
Bitensky, I.S.
|
|
1996
|
112 |
1-4 |
p. 12-15
4 p.
|
artikel
|
| 44 |
Novel approach for synthesizing of nanometer-sized Si crystals in SiO2 by ion implantation and their optical characterization
|
Shimizu-Iwayama, Tsutomu
|
|
1996
|
112 |
1-4 |
p. 214-218
5 p.
|
artikel
|
| 45 |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope
|
Fedina, L.
|
|
1996
|
112 |
1-4 |
p. 133-138
6 p.
|
artikel
|
| 46 |
Preparation of Al2O3 films by a new CVD process combining plasma and accelerated ion beams
|
Nakai, Hiroshi
|
|
1996
|
112 |
1-4 |
p. 280-283
4 p.
|
artikel
|
| 47 |
Preparation of C60 single crystalline thin film by ionized cluster beam deposition and ion implantation into single crystalline C60 thin film
|
Isoda, Satoru
|
|
1996
|
112 |
1-4 |
p. 94-98
5 p.
|
artikel
|
| 48 |
Processing and characterization of ferroelectric thin films by multi-ion-beam sputtering
|
Kanno, I.
|
|
1996
|
112 |
1-4 |
p. 125-128
4 p.
|
artikel
|
| 49 |
Production, acceleration and diagnostics of high intensity beams
|
Wolf, B.H.
|
|
1996
|
112 |
1-4 |
p. 30-38
9 p.
|
artikel
|
| 50 |
Production, acceleration and diagnostics of molecular ions and ionized clusters
|
Håkansson, P.
|
|
1996
|
112 |
1-4 |
p. 39-47
9 p.
|
artikel
|
| 51 |
Progress in Japanese frontier projects on ion beam processing of advanced materials
|
Hattori, K.
|
|
1996
|
112 |
1-4 |
p. 233-241
9 p.
|
artikel
|
| 52 |
Radiation damage of 2 MeV Si ions in Si0.75Ge0.25: optical measurements and damage modelling
|
Lindner, J.K.N.
|
|
1996
|
112 |
1-4 |
p. 316-320
5 p.
|
artikel
|
| 53 |
Reactive accelerated cluster erosion (RACE) by ionized cluster beams
|
Gspann, Jürgen
|
|
1996
|
112 |
1-4 |
p. 86-88
3 p.
|
artikel
|
| 54 |
Secondary electron emission from thin carbon foils under hydrogen cluster impact
|
Billebaud, A.
|
|
1996
|
112 |
1-4 |
p. 79-82
4 p.
|
artikel
|
| 55 |
Secondary electron emission of solids by impact of molecular ions and clusters
|
Fallavier, M.
|
|
1996
|
112 |
1-4 |
p. 72-78
7 p.
|
artikel
|
| 56 |
Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulation
|
Reiss, Stefan
|
|
1996
|
112 |
1-4 |
p. 223-227
5 p.
|
artikel
|
| 57 |
SiO2 film formation at room temperature by gas cluster ion beam oxidation
|
Akizuki, M.
|
|
1996
|
112 |
1-4 |
p. 83-85
3 p.
|
artikel
|
| 58 |
Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile
|
Boher, Pierre
|
|
1996
|
112 |
1-4 |
p. 160-168
9 p.
|
artikel
|
| 59 |
Sputtering of large size clusters from solids bombarded by high energy cluster ions and fullerenes
|
Baudin, K.
|
|
1996
|
112 |
1-4 |
p. 59-63
5 p.
|
artikel
|
| 60 |
STM investigation of energetic carbon cluster ion penetration depth into HOPG
|
Bräuchle, G.
|
|
1996
|
112 |
1-4 |
p. 105-108
4 p.
|
artikel
|
| 61 |
Structural defects in SIMOX
|
Stoemenos, J.
|
|
1996
|
112 |
1-4 |
p. 206-213
8 p.
|
artikel
|
| 62 |
Structural, morphological, electrical and luminous properties of undoped micro/nanocrystalline silicon films deposited by ion-assisted beam deposition techniques
|
Khan, H.R.
|
|
1996
|
112 |
1-4 |
p. 289-293
5 p.
|
artikel
|
| 63 |
Structural studies of ion beam synthesised SiGe Si heterostructures for HBT applications
|
Cristiano, F.
|
|
1996
|
112 |
1-4 |
p. 311-315
5 p.
|
artikel
|
| 64 |
Submicron CoSi2 structures fabricated by focused ion beam implantation and local flash lamp melting
|
Bischoff, L.
|
|
1996
|
112 |
1-4 |
p. 201-205
5 p.
|
artikel
|
| 65 |
TED of boron in the presence of EOR defects: the use of the theory of Ostwald ripening to calculate Si-interstitial supersaturation in the vicinity of extrinsic defects
|
Bonafos, C.
|
|
1996
|
112 |
1-4 |
p. 129-132
4 p.
|
artikel
|
| 66 |
The chemical factor and its influence on the formation of defect structures and their gettering properties in layers of silicon implanted with chemical-active ions
|
Aleshin, A.N.
|
|
1996
|
112 |
1-4 |
p. 184-187
4 p.
|
artikel
|
| 67 |
The computer simulation of energetic particle-solid interactions
|
Webb, Roger P.
|
|
1996
|
112 |
1-4 |
p. 99-104
6 p.
|
artikel
|
| 68 |
The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants
|
Kyllesbech Larsen, K.
|
|
1996
|
112 |
1-4 |
p. 139-143
5 p.
|
artikel
|
| 69 |
The effect of dose rate on ion implanted impurity profiles in silicon
|
Tian, S.
|
|
1996
|
112 |
1-4 |
p. 144-147
4 p.
|
artikel
|
| 70 |
The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2 + ions into (100) silicon through a protecting mask
|
Kaabi, L.
|
|
1996
|
112 |
1-4 |
p. 196-200
5 p.
|
artikel
|
| 71 |
The use of coincidence counting mass spectrometry to study the emission and metastable dissociation of cluster ions
|
Van Stipdonk, M.J.
|
|
1996
|
112 |
1-4 |
p. 68-71
4 p.
|
artikel
|
| 72 |
Thin BN films obtained by dual-ion-beam sputtering: an FT-IR and spectroscopic ellipsometry characterization
|
Quirós, C.
|
|
1996
|
112 |
1-4 |
p. 275-279
5 p.
|
artikel
|
| 73 |
Track formation in metals by electronic processes using atomic and cluster ions
|
Dunlop, A.
|
|
1996
|
112 |
1-4 |
p. 23-25
3 p.
|
artikel
|
| 74 |
Ultra-shallow junction formation in silicon using ion implantation
|
Tasch, A.F.
|
|
1996
|
112 |
1-4 |
p. 177-183
7 p.
|
artikel
|
| 75 |
XTEM and IR absorption analysis of silicon carbide prepared by high temperature carbon implantation in silicon
|
Simon, L.
|
|
1996
|
112 |
1-4 |
p. 330-333
4 p.
|
artikel
|
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