Ion implantation induced damage in relaxed Si0.75Ge0.25
Titel:
Ion implantation induced damage in relaxed Si0.75Ge0.25
Auteur:
Priolo, F. Spinella, C. Albertazzi, E. Bianconi, M. Lulli, G. Nipoti, R. Lindner, J.K.N. Mesli, A. Barklie, R.C. Sealy, L. Holm, B. Nylandsted^Larsen, A.
Verschenen in:
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms