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                             38 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A cloud model-based method for the analysis of accelerated life test data Zhang, Wenjin
2015
55 1 p. 123-128
6 p.
artikel
2 An advanced area scaling approach for semiconductor burn-in Kurz, Daniel
2015
55 1 p. 129-137
9 p.
artikel
3 An analytical avalanche breakdown model for double gate MOSFET Cho, Edward Namkyu
2015
55 1 p. 38-41
4 p.
artikel
4 Call for Papers: Reliability Issues in Power Electronics 2015
55 1 p. 292-
1 p.
artikel
5 Characterizing, modeling, and analyzing soft error propagation in asynchronous and synchronous digital circuits Bany Hamad, Ghaith
2015
55 1 p. 238-250
13 p.
artikel
6 Compact failure modeling for devices subject to electrostatic discharge stresses – A review pertinent to CMOS reliability simulation Miao, Meng
2015
55 1 p. 15-23
9 p.
artikel
7 Copper wire bonding package decapsulation using the anodic protection method Endoh, Hirohiko
2015
55 1 p. 207-212
6 p.
artikel
8 Corrigendum to “Junction temperature management of IGBT module in power electronic converters” [Microelectron. Reliab. 54 (2014) 2788–2795] Zhou, Luowei
2015
55 1 p. 291-
1 p.
artikel
9 Crosstalk noise modeling of multiwall carbon nanotube (MWCNT) interconnects using finite-difference time-domain (FDTD) technique Ramesh Kumar, Vobulapuram
2015
55 1 p. 155-163
9 p.
artikel
10 CSAM: A clock skew-aware aging mitigation technique Eghbalkhah, Behzad
2015
55 1 p. 282-290
9 p.
artikel
11 Deposition of Fe3O4 on oxidized activated carbon by hydrazine reducing method for high performance supercapacitor Oh, Ilgeun
2015
55 1 p. 114-122
9 p.
artikel
12 Effects of different test profiles of temperature cycling tests on the reliability of RFID tags Lahokallio, Sanna
2015
55 1 p. 93-100
8 p.
artikel
13 Electro- and thermomigration induced Cu3Sn and Cu6Sn5 formation in SnAg3.0Cu0.5 bumps Meinshausen, L.
2015
55 1 p. 192-200
9 p.
artikel
14 Empirical prediction model for Li/SOCl2 cells based on the accelerated degradation test Cheng, Sijie
2015
55 1 p. 101-106
6 p.
artikel
15 Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films Blasco, J.
2015
55 1 p. 1-14
14 p.
artikel
16 Equivalent mechanical properties of through silicon via interposers – A unit model approach Chen, Cheng-fu
2015
55 1 p. 221-230
10 p.
artikel
17 Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications Msolli, S.
2015
55 1 p. 164-171
8 p.
artikel
18 Exploiting component dependency for accurate and efficient soft error analysis via Probabilistic Graphical Models Jiao, Jiajia
2015
55 1 p. 251-263
13 p.
artikel
19 Fast power cycling protocols implemented in an automated test bench dedicated to IGBT module ageing Forest, Francois
2015
55 1 p. 81-92
12 p.
artikel
20 Genetic algorithms for defect detection of flip chips Su, Lei
2015
55 1 p. 213-220
8 p.
artikel
21 High performance SOI CMOS pixel sensor with surrounding N+ trench electrode Hu, Hai-fan
2015
55 1 p. 42-47
6 p.
artikel
22 Impact of geometry on stretchable meandered interconnect uniaxial tensile extension fatigue reliability Jablonski, M.
2015
55 1 p. 143-154
12 p.
artikel
23 Inside front cover - Editorial board 2015
55 1 p. IFC-
1 p.
artikel
24 Interfacial reaction and mechanical evaluation in multi-level assembly joints with ENEPIG under bump metallization via drop and high speed impact test Lin, Hsiu-Min
2015
55 1 p. 231-237
7 p.
artikel
25 Low-power fault-tolerant interconnect method based on LCDMA and duplication Nikolic, Tatjana
2015
55 1 p. 272-281
10 p.
artikel
26 Modelling and IR measurement of the electronic substrate thermal conductivity De Mey, G.
2015
55 1 p. 138-142
5 p.
artikel
27 More uniform Pd distribution in free-air balls of Pd-coated Cu bonding wire using movable flame-off electrode Ly, Nhat
2015
55 1 p. 201-206
6 p.
artikel
28 Node-to-node error sensitivity analysis using a graph based approach for VLSI logic circuits Hamiyati Vaghef, Vahid
2015
55 1 p. 264-271
8 p.
artikel
29 N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator Chiu, Hsien-Chin
2015
55 1 p. 48-51
4 p.
artikel
30 PBGA packaging reliability assessments under random vibrations for space applications Kim, Yeong K.
2015
55 1 p. 172-179
8 p.
artikel
31 Process and temperature robust voltage multiplier design for RF energy harvesting Yuan, J.S.
2015
55 1 p. 107-113
7 p.
artikel
32 Raman spectroscopic assessments of structural orientation and residual stress in wurtzitic AlN film deposited on (001) Si Zhu, Wenliang
2015
55 1 p. 66-73
8 p.
artikel
33 Reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories Chang, Wei
2015
55 1 p. 74-80
7 p.
artikel
34 Reliability investigation of light-emitting diodes via low frequency noise characteristics Pralgauskaitė, Sandra
2015
55 1 p. 52-61
10 p.
artikel
35 Short-channel effect and device design of extremely scaled tunnel field-effect transistors Chien, Nguyen Dang
2015
55 1 p. 31-37
7 p.
artikel
36 Soft errors in floating gate memory cells: A review Bagatin, Marta
2015
55 1 p. 24-30
7 p.
artikel
37 The effect of electroplating parameters and substrate material on tin whisker formation Ashworth, M.A.
2015
55 1 p. 180-191
12 p.
artikel
38 The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes Zhu, Hui
2015
55 1 p. 62-65
4 p.
artikel
                             38 gevonden resultaten
 
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