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                             117 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A bottom-up approach for System-On-Chip reliability Huard, V.
 2011
 51 9-11 p. 1425-1439
15 p.
 artikel
2 Accelerated life test of high power white light emitting diodes based on package failure mechanisms Chan, S.I.
 2011
 51 9-11 p. 1806-1809
4 p.
 artikel
3 A compact model for early electromigration failures of copper dual-damascene interconnects de Orio, R.L.
 2011
 51 9-11 p. 1573-1577
5 p.
 artikel
4 A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32nm node Bourgeat, J.
 2011
 51 9-11 p. 1614-1617
4 p.
 artikel
5 Ageing monitoring of lithium-ion cell during power cycling tests Eddahech, A.
 2011
 51 9-11 p. 1968-1971
4 p.
 artikel
6 An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches Iannacci, J.
 2011
 51 9-11 p. 1869-1873
5 p.
 artikel
7 Analysis of critical-length data from Electromigration failure studies Dwyer, V.M.
 2011
 51 9-11 p. 1568-1572
5 p.
 artikel
8 An analytical approach for physical modeling of hot-carrier induced degradation Tyaginov, S.
 2011
 51 9-11 p. 1525-1529
5 p.
 artikel
9 A new test methodology for an exhaustive study of single-event-effects on power MOSFETs Busatto, G.
 2011
 51 9-11 p. 1995-1998
4 p.
 artikel
10 An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown Miranda, E.
 2011
 51 9-11 p. 1535-1539
5 p.
 artikel
11 An original DoE-based tool for silicon photodetectors EoL estimation in space environments Spezzigu, P.
 2011
 51 9-11 p. 1999-2003
5 p.
 artikel
12 An overview of the reliability prediction related aspects of high power IGBTs in wind power applications Busca, C.
 2011
 51 9-11 p. 1903-1907
5 p.
 artikel
13 ANSYS based 3D electro-thermal simulations for the evaluation of power MOSFETs robustness de Filippis, Stefano
 2011
 51 9-11 p. 1954-1958
5 p.
 artikel
14 Application of transient interferometric mapping method for ESD and latch-up analysis Pogany, D.
 2011
 51 9-11 p. 1592-1596
5 p.
 artikel
15 Applying Bayesian mixtures-of-experts models to statistical description of smart power semiconductor reliability Bluder, Olivia
 2011
 51 9-11 p. 1464-1468
5 p.
 artikel
16 A reliable technology concept for active power cycling to extreme temperatures Nelhiebel, M.
 2011
 51 9-11 p. 1927-1932
6 p.
 artikel
17 A simplified procedure for the analysis of Safety Instrumented Systems in the process industry application Catelani, M.
 2011
 51 9-11 p. 1503-1507
5 p.
 artikel
18 A study of SiC Power BJT performance and robustness Castellazzi, A.
 2011
 51 9-11 p. 1773-1777
5 p.
 artikel
19 A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices Pietranico, S.
 2011
 51 9-11 p. 1824-1829
6 p.
 artikel
20 A time-domain physics-of-failure model for the lifetime prediction of wire bond interconnects Yang, L.
 2011
 51 9-11 p. 1882-1886
5 p.
 artikel
21 Backside failure analysis case study: Implementation of innovative Local Backside Deprocessing technique Laroche, A.
 2011
 51 9-11 p. 1705-1709
5 p.
 artikel
22 Challenges and opportunity in performance, variability and reliability in sub-45nm CMOS technologies Arnaud, F.
 2011
 51 9-11 p. 1508-1514
7 p.
 artikel
23 Characterization and modelling of single event transients in LDMOS-SOI FETs Alvarado, J.
 2011
 51 9-11 p. 2004-2009
6 p.
 artikel
24 Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy Berthet, F.
 2011
 51 9-11 p. 1796-1800
5 p.
 artikel
25 Chromatic and spherical aberration correction for silicon aplanatic solid immersion lens for fault isolation and photon emission microscopy of integrated circuits Goldberg, B.B.
 2011
 51 9-11 p. 1637-1639
3 p.
 artikel
26 Comparative studies on solder joint reliability of CTBGA assemblies with various adhesives using the array-based package shear test Shi, Hongbin
 2011
 51 9-11 p. 1898-1902
5 p.
 artikel
27 Comparative study of sensitive volume and triggering criteria of SEB in 600V planar and trench IGBTs Zerarka, M.
 2011
 51 9-11 p. 1990-1994
5 p.
 artikel
28 Comparison of IGBT short-circuit failure “ohmic mode”: Epoxy molded package versus silicone gel module for new fail-safe and interruptible power converters Richardeau, Frédéric
 2011
 51 9-11 p. 1919-1926
8 p.
 artikel
29 Comprehensive nanostructural study of SSRM nanocontact on silicon Delaroque, T.
 2011
 51 9-11 p. 1693-1696
4 p.
 artikel
30 Concurrent PBTI and hot carrier degradation in n-channel MuGFETs Lee, Sueng Min
 2011
 51 9-11 p. 1544-1546
3 p.
 artikel
31 Control of the electromagnetic compatibility: An issue for IC reliability Gros, Jean-Baptiste
 2011
 51 9-11 p. 1493-1497
5 p.
 artikel
32 Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality Rongen, R.T.H.
 2011
 51 9-11 p. 1865-1868
4 p.
 artikel
33 Cu pumping in TSVs: Effect of pre-CMP thermal budget De Wolf, I.
 2011
 51 9-11 p. 1856-1859
4 p.
 artikel
34 DC parameters for laser diodes from experimental curves Vanzi, M.
 2011
 51 9-11 p. 1752-1756
5 p.
 artikel
35 Degradation mechanisms of high-power white LEDs activated by current and temperature Dal Lago, M.
 2011
 51 9-11 p. 1742-1746
5 p.
 artikel
36 Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency Trivellin, N.
 2011
 51 9-11 p. 1747-1751
5 p.
 artikel
37 3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs Azoui, T.
 2011
 51 9-11 p. 1943-1947
5 p.
 artikel
38 Design considerations and strategies for high-reliable STT-MRAM Zhao, W.S.
 2011
 51 9-11 p. 1454-1458
5 p.
 artikel
39 “Design for EMI” approach on power PiN diode reverse recovery Tsukuda, M.
 2011
 51 9-11 p. 1972-1975
4 p.
 artikel
40 Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications Ciappa, M.
 2011
 51 9-11 p. 1479-1483
5 p.
 artikel
41 Determination of bulk discharge current in the dielectric film of MEMS capacitive switches Koutsoureli, M.S.
 2011
 51 9-11 p. 1874-1877
4 p.
 artikel
42 Dynamic active cooling for improved power system reliability Castellazzi, A.
 2011
 51 9-11 p. 1964-1967
4 p.
 artikel
43 Dynamic defect localization using FPGA to monitor digital values Saury, L.
 2011
 51 9-11 p. 1701-1704
4 p.
 artikel
44 Dynamic electro-thermal modeling for power device assemblies Cova, P.
 2011
 51 9-11 p. 1948-1953
6 p.
 artikel
45 Editorial Labat, Nathalie
 2011
 51 9-11 p. 1423-1424
2 p.
 artikel
46 Effect of high temperature aging on reliability of automotive electronics Yang, D.G.
 2011
 51 9-11 p. 1938-1942
5 p.
 artikel
47 Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors Cho, Edward Namkyu
 2011
 51 9-11 p. 1792-1795
4 p.
 artikel
48 Effects of device layout on the drain breakdown voltages in MuGFETs Kim, Jin Young
 2011
 51 9-11 p. 1547-1550
4 p.
 artikel
49 Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology Liu, R.
 2011
 51 9-11 p. 1721-1724
4 p.
 artikel
50 Electric field unbalance for robust floating ring termination Villamor-Baliarda, A.
 2011
 51 9-11 p. 1959-1963
5 p.
 artikel
51 Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology Riccio, M.
 2011
 51 9-11 p. 1725-1729
5 p.
 artikel
52 ESD sensitivity of a GaAs MMIC microwave power amplifier Tazzoli, Augusto
 2011
 51 9-11 p. 1602-1607
6 p.
 artikel
53 Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow Aubert, A.
 2011
 51 9-11 p. 1845-1849
5 p.
 artikel
54 Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout Berbel, N.
 2011
 51 9-11 p. 1564-1567
4 p.
 artikel
55 Experiment and numerical analysis for edge and corner bonded PoP bottom package assemblies under four-point bending Shi, Hongbin
 2011
 51 9-11 p. 1850-1855
6 p.
 artikel
56 Failure analysis defect location on a real case 55nm memory using dynamic power supply emulation Parrassin, Thierry
 2011
 51 9-11 p. 1646-1651
6 p.
 artikel
57 Failure mechanisms in advanced BCD technology during reliability qualification van Hassel, J.G.
 2011
 51 9-11 p. 1697-1700
4 p.
 artikel
58 Fault isolation in semiconductor product, process, physical and package failure analysis: Importance and overview Chin, Jiann Min
 2011
 51 9-11 p. 1440-1448
9 p.
 artikel
59 FIFA: A fault-injection–fault-analysis-based tool for reliability assessment at RTL level Naviner, L.A.B.
 2011
 51 9-11 p. 1459-1463
5 p.
 artikel
60 Foundry workflow for dynamic-EFA-based yield ramp Kardach, C.
 2011
 51 9-11 p. 1668-1672
5 p.
 artikel
61 From component to system failure analysis – The future challenge within work-sharing supply chains Jacob, Peter
 2011
 51 9-11 p. 1618-1623
6 p.
 artikel
62 GaN-based HEMTs tested under high temperature storage test Marcon, D.
 2011
 51 9-11 p. 1717-1720
4 p.
 artikel
63 HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors Huang, Ru
 2011
 51 9-11 p. 1515-1520
6 p.
 artikel
64 High temperature long term stability of SiC Schottky diodes Testa, A.
 2011
 51 9-11 p. 1778-1782
5 p.
 artikel
65 How supercapacitors reach end of life criteria during calendar life and power cycling tests Chaari, R.
 2011
 51 9-11 p. 1976-1979
4 p.
 artikel
66 Identifying electrical mechanisms responsible for functional failures during harsh external ESD and EMC aggression Besse, P.
 2011
 51 9-11 p. 1597-1601
5 p.
 artikel
67 Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs Pobegen, Gregor
 2011
 51 9-11 p. 1530-1534
5 p.
 artikel
68 Impact of irregular geometries on low-k dielectric breakdown Bashir, Muhammad
 2011
 51 9-11 p. 1582-1586
5 p.
 artikel
69 Impact of modularity and redundancy in optimising the reliability of power systems that include a large number of power converters Siemaszko, Daniel
 2011
 51 9-11 p. 1484-1488
5 p.
 artikel
70 Improved thermal management of low voltage power devices with optimized bond wire positions Köck, Helmut
 2011
 51 9-11 p. 1913-1918
6 p.
 artikel
71 Influence of air gaps on the thermal–electrical–mechanical behavior of a copper metallization Bauer, Irina
 2011
 51 9-11 p. 1587-1591
5 p.
 artikel
72 Influence of test structure design on stress-induced-voiding using an experimentally validated Finite Element Modeling approach Lofrano, M.
 2011
 51 9-11 p. 1578-1581
4 p.
 artikel
73 Inside front cover - Editorial board 2011
 51 9-11 p. IFC-
1 p.
 artikel
74 Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test Massenz, A.
 2011
 51 9-11 p. 1887-1891
5 p.
 artikel
75 Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design Ghosh, S.
 2011
 51 9-11 p. 1736-1741
6 p.
 artikel
76 Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications Ousten, J.P.
 2011
 51 9-11 p. 1830-1835
6 p.
 artikel
77 Laser induced impact ionization effect in MOSFET during 1064nm laser stimulation Brahma, Sanjib Kumar
 2011
 51 9-11 p. 1652-1657
6 p.
 artikel
78 Leakage current, active power, and delay analysis of dynamic dual Vt CMOS circuits under P–V–T fluctuations Wang, Jinhui
 2011
 51 9-11 p. 1498-1502
5 p.
 artikel
79 LVI detection on passive structure in advance CMOS technology: New opportunities for device analysis Celi, Guillaume
 2011
 51 9-11 p. 1662-1667
6 p.
 artikel
80 Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization Infante, F.
 2011
 51 9-11 p. 1684-1688
5 p.
 artikel
81 Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress Joly, Y.
 2011
 51 9-11 p. 1561-1563
3 p.
 artikel
82 Measurement and simulation of interfacial adhesion strength between SiO2 thin film and III–V material Chou, Tsung-Lin
 2011
 51 9-11 p. 1757-1761
5 p.
 artikel
83 Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect Weber, Y.
 2011
 51 9-11 p. 1908-1912
5 p.
 artikel
84 Migration induced material transport in Cu–Sn IMC and SnAgCu microbumps Meinshausen, L.
 2011
 51 9-11 p. 1860-1864
5 p.
 artikel
85 MOS-IGBT power devices for high-temperature operation in smart power SOI technology Arbess, H.
 2011
 51 9-11 p. 1980-1984
5 p.
 artikel
86 NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions Manić, I.
 2011
 51 9-11 p. 1540-1543
4 p.
 artikel
87 On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies Zaghloul, Usama
 2011
 51 9-11 p. 1810-1818
9 p.
 artikel
88 Operation of SiC normally-off JFET at the edges of its safe operating area Abbate, Carmine
 2011
 51 9-11 p. 1767-1772
6 p.
 artikel
89 Optimization of wire connections design for power electronics Celnikier, Y.
 2011
 51 9-11 p. 1892-1897
6 p.
 artikel
90 Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS Wang, B.
 2011
 51 9-11 p. 1878-1881
4 p.
 artikel
91 Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning Glowacki, A.
 2011
 51 9-11 p. 1632-1636
5 p.
 artikel
92 Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory Llido, R.
 2011
 51 9-11 p. 1658-1661
4 p.
 artikel
93 Positive bias temperature instabilities on sub-nanometer EOT FinFETs Feijoo, P.C.
 2011
 51 9-11 p. 1521-1524
4 p.
 artikel
94 Power cycling fatigue and lifetime prediction of power electronic devices in space applications Vacher, F.
 2011
 51 9-11 p. 1985-1989
5 p.
 artikel
95 Progressive module redundancy for fault-tolerant designs in nanoelectronics Ban, Tian
 2011
 51 9-11 p. 1489-1492
4 p.
 artikel
96 QALT study of scintillating material in digital flat panels for medical imaging Béranger, M.
 2011
 51 9-11 p. 1801-1805
5 p.
 artikel
97 Reliability assessment on new reprogrammable non-volatile memory devices based on SiCr–O Li, Yuan
 2011
 51 9-11 p. 1474-1478
5 p.
 artikel
98 Reliability aware design of low power continuous-time sigma–delta modulator Cai, H.
 2011
 51 9-11 p. 1449-1453
5 p.
 artikel
99 Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies Galy, Ph.
 2011
 51 9-11 p. 1608-1613
6 p.
 artikel
100 Reliability issues of GaN based high voltage power devices Wuerfl, J.
 2011
 51 9-11 p. 1710-1716
7 p.
 artikel
101 Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses Koné, G.A.
 2011
 51 9-11 p. 1730-1735
6 p.
 artikel
102 Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress Khemiri, S.
 2011
 51 9-11 p. 1783-1787
5 p.
 artikel
103 S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects Belaïd, M.A.
 2011
 51 9-11 p. 1551-1556
6 p.
 artikel
104 Statistical modeling of reliability in logic devices Schleifer, Jochen
 2011
 51 9-11 p. 1469-1473
5 p.
 artikel
105 Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I Tanaka, M.
 2011
 51 9-11 p. 1933-1937
5 p.
 artikel
106 Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences Li, B.
 2011
 51 9-11 p. 1557-1560
4 p.
 artikel
107 Synthesis of scanning electron microscopy images by high performance computing for the metrology of advanced CMOS processes Esposito, Aniello
 2011
 51 9-11 p. 1673-1678
6 p.
 artikel
108 The combinational or selective usage of the laser SQUID microscope, the non-bias laser terahertz emission microscope, and fault simulations in non-electrical-contact fault localization Nikawa, Kiyoshi
 2011
 51 9-11 p. 1624-1631
8 p.
 artikel
109 Thermal impedance spectroscopy of power modules Hensler, A.
 2011
 51 9-11 p. 1679-1683
5 p.
 artikel
110 Thermal–mechanical behavior of the bonding wire for a power module subjected to the power cycling test Hung, T.Y.
 2011
 51 9-11 p. 1819-1823
5 p.
 artikel
111 Thermal optimization of GaN-on-Si HEMTs with plastic package Liu, R.
 2011
 51 9-11 p. 1788-1791
4 p.
 artikel
112 Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs) Bari, D.
 2011
 51 9-11 p. 1762-1766
5 p.
 artikel
113 Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis Bascoul, G.
 2011
 51 9-11 p. 1640-1645
6 p.
 artikel
114 Tiny-scale “stealth” current sensor to probe power semiconductor device failure Kasho, Yuya
 2011
 51 9-11 p. 1689-1692
4 p.
 artikel
115 Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour Tala-Ighil, B.
 2011
 51 9-11 p. 2010-2014
5 p.
 artikel
116 Warpage analysis of layered structures connected by direct brazing Asada, T.
 2011
 51 9-11 p. 1836-1839
4 p.
 artikel
117 Warpage variations of Si/solder/OFHC-Cu layered plates subjected to cyclic thermal loading Tanie, Hisashi
 2011
 51 9-11 p. 1840-1844
5 p.
 artikel
                             117 gevonden resultaten
 
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