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                                       Details for article 63 of 117 found articles
 
 
  HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors
 
 
Title: HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors
Author: Huang, Ru
Wang, Runsheng
Liu, Changze
Zhang, Liangliang
Zhuge, Jing
Tao, Yu
Zou, Jibin
Liu, Yuchao
Wang, Yangyuan
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 9-11 pages 6 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 63 of 117 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands