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                                       Details for article 48 of 117 found articles
 
 
  Effects of device layout on the drain breakdown voltages in MuGFETs
 
 
Title: Effects of device layout on the drain breakdown voltages in MuGFETs
Author: Kim, Jin Young
Yu, Chong Gun
Park, Jong Tae
Appeared in: Microelectronics reliability
Paging: Volume 51 (2011) nr. 9-11 pages 4 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 48 of 117 found articles
 
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