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                             78 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AC effects in IC reliability Hu, Chenming
1996
36 11-12 p. 1611-1617
artikel
2 A comparison of focused ion beam and electron beam induced deposition processes Lipp, S.
1996
36 11-12 p. 1779-1782
artikel
3 A current self-limited protective device studied by LF-noise measurements Modjtahedi, A.
1996
36 11-12 p. 1759-1762
artikel
4 Analysis of the surface base current drift in GaAs HBT's Maneux, C.
1996
36 11-12 p. 1903-1906
artikel
5 A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides Degraeve, R.
1996
36 11-12 p. 1639-1642
artikel
6 A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits Glasow, A.v.
1996
36 11-12 p. 1755-1758
artikel
7 A new physics-based model for time-dependent Dielectric breakdown Schlund, B.J.
1996
36 11-12 p. 1655-1658
artikel
8 A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions Degraeve, R.
1996
36 11-12 p. 1651-1654
artikel
9 A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities D'Haeger, V.
1996
36 11-12 p. 1695-1698
artikel
10 A new wafer level reliability method for evaluation of ionic induced pmosfet drift effects Dreizner, A.
1996
36 11-12 p. 1855-1858
artikel
11 A practical system for hot spot detection using fluorescent microthermal imaging Glacet, J.-Y.
1996
36 11-12 p. 1811-1814
artikel
12 Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress Kies, R.
1996
36 11-12 p. 1619-1622
artikel
13 Automotive and aerospace electronic systems. Dependability requirements Rose, P.D.
1996
36 11-12 p. 1923-1929
artikel
14 A wafer level reliability method for short-loop processing Duluc, J.B.
1996
36 11-12 p. 1859-1862
artikel
15 Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopy Lawton, W.
1996
36 11-12 p. 1803-1806
artikel
16 Characterisation of reliability of compound semiconductor devices using electrical pulses Brandt, M.
1996
36 11-12 p. 1891-1894
artikel
17 Comprehensive gate-oxide reliability evaluation for dram processes Vollertsen, R.-P.
1996
36 11-12 p. 1631-1638
artikel
18 Comprehensive physical modeling of nmosfet hot-carrier-induced degradation Lunenborg, M.M.
1996
36 11-12 p. 1667-1670
artikel
19 Copper interconnection lines: SARF characterization and lifetime test Ciofi, C.
1996
36 11-12 p. 1747-1750
artikel
20 DC, LF dispersion and hf characterisation of short time stressed inp based LM-HEMTS Schreurs, D.
1996
36 11-12 p. 1911-1914
artikel
21 Designing circuits and processes to optimize performance and reliability: Metallurgy meets tcad Thompson, C.V.
1996
36 11-12 p. 1683-1690
artikel
22 Design of a test structure to evaluate electro-thermomigration in power ICs De Munari, I.
1996
36 11-12 p. 1875-1878
artikel
23 Drain current dlts analysis of recoverable and permanent degradation effects in AlGaAs/GaAs AND AlGaAs/InGaAs HEMT'S Meneghesso, G.
1996
36 11-12 p. 1895-1898
artikel
24 Effects of metallization lay-out on turn-off failure of modern power bipolar transistors Busatto, G.
1996
36 11-12 p. 1867-1870
artikel
25 Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique Ker, Ming-Dou
1996
36 11-12 p. 1731-1734
artikel
26 Electric field dependence of TDDB activation energy in ultrathin oxides Vincent, E.
1996
36 11-12 p. 1643-1646
artikel
27 Enhancement of t bd of mos gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regime Martini, A.
1996
36 11-12 p. 1647-1650
artikel
28 ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's Ker, Ming-Dou
1996
36 11-12 p. 1727-1730
artikel
29 Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique Christiaens, F.
1996
36 11-12 p. 1807-1810
artikel
30 Examination of reflow resistance for copper frame smd products Setoya, T.
1996
36 11-12 p. 1799-1802
artikel
31 Experimental validation of mechanical stress models by micro-Raman spectroscopy De Wolf, I.
1996
36 11-12 p. 1751-1754
artikel
32 Finite element investigations of mechanical stress in metallization structures Weide, K.
1996
36 11-12 p. 1703-1706
artikel
33 Hot-carrier reliability of N- and P-channel mosfets with polysilicon and CVD tungsten-polycide gate Lou, C.L.
1996
36 11-12 p. 1663-1666
artikel
34 Improved critical area prediction by application of pattern recognition techniques Mattick, J.H.N.
1996
36 11-12 p. 1815-1818
artikel
35 Influence of parasitic structures on the ESD performance of a pure bipolar process Nikolaïdis, T.
1996
36 11-12 p. 1723-1726
artikel
36 Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors Wouters, D.J.
1996
36 11-12 p. 1763-1766
artikel
37 In-situ monitoring of dry corrosion degradation of au ball bonds to al bond pads in plastic packages during HTSL Ragay, F.W.
1996
36 11-12 p. 1931-1934
artikel
38 Introduction of plastic encapsulated devices in systems operating under severe temperature conditions Hernandez, R
1996
36 11-12 p. 1943-1946
artikel
39 Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions Duane, R.
1996
36 11-12 p. 1623-1626
artikel
40 Justifications for reducing HBM and MM ESD qualification test time Verhaege, K.
1996
36 11-12 p. 1715-1718
artikel
41 Measurement and modeling of a new width dependence of nmosfet degradation Schuler, F.
1996
36 11-12 p. 1675-1678
artikel
42 Method for precise determination of the statistical distribution of the input offset voltage of differential stages Thewes, R.
1996
36 11-12 p. 1823-1826
artikel
43 Microdac — A novel approach to measure in situ deformation fields of microscopic scale Vogel, D.
1996
36 11-12 p. 1939-1942
artikel
44 Nanoscopic evaluation of semiconductor properties by scanning probe microscopies Balk, L.J.
1996
36 11-12 p. 1767-1774
artikel
45 New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS Park, Jong Tae
1996
36 11-12 p. 1659-1662
artikel
46 Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults — A characterization case study using atomic force microscopy Jacob, P.
1996
36 11-12 p. 1783-1786
artikel
47 Preface Groeseneken, G.
1996
36 11-12 p. vii-ix
artikel
48 Pulsed stress reliability investigations of schottky diodes and HBTS Schüβler, M.
1996
36 11-12 p. 1907-1910
artikel
49 Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation Wolf, H.
1996
36 11-12 p. 1711-1714
artikel
50 Quality and reliability improvement through defect oriented failure analysis de Pauw, P.
1996
36 11-12 p. 1835-1838
artikel
51 Question marks to the extrapolation to lower temperatures in high temperature storage life (HTSL) testing in plastic encapsulated IC'S Schuddeboom, W.
1996
36 11-12 p. 1935-1938
artikel
52 Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability ERA Van Der Pol, Jacob A.
1996
36 11-12 p. 1603-1610
artikel
53 Relationship between profile of stressgenerated interface traps and degradation of submicron LDD mosfet's Okhonin, S.
1996
36 11-12 p. 1671-1674
artikel
54 Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by movpe and dry etching technique Mawatari, Hiroyasu
1996
36 11-12 p. 1915-1918
artikel
55 Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation Vendrame, L.
1996
36 11-12 p. 1827-1830
artikel
56 Reliability indicators for lift-off of bond wires in IGBT power-modules Farokhzad, B.
1996
36 11-12 p. 1863-1866
artikel
57 Reliability of a focused ion beam repair on digital cmos circuits Van Camp, R
1996
36 11-12 p. 1787-1790
artikel
58 Reproducibility of field failures by ESD models — Comparison of HBM, socketed CDM and non-socketed CDM Brodbeck, T.
1996
36 11-12 p. 1719-1722
artikel
59 Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines Scorzoni, A.
1996
36 11-12 p. 1691-1694
artikel
60 Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS-transistors Musshoff, C.
1996
36 11-12 p. 1743-1746
artikel
61 SEGR: A unique failure mode for power MOSFETs in spacecraft Allenspach, M.
1996
36 11-12 p. 1871-1874
artikel
62 Simulation of the gate burnout of GaAs mesfet Vashchenko, V.A.
1996
36 11-12 p. 1887-1890
artikel
63 Simulation study for the CDM ESD behaviour of the grounded-gate nmos Russ, C.
1996
36 11-12 p. 1739-1742
artikel
64 Soldered joints on leaded components: Development of a design tool to predict failure during temperature cycle tests Wolbert, P.M.M.
1996
36 11-12 p. 1791-1797
artikel
65 Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry Cosemans, P.
1996
36 11-12 p. 1699-1702
artikel
66 Study of the soft leakage current induced ESD on LDD transistor Wada, Tetsuaki
1996
36 11-12 p. 1707-1710
artikel
67 Study on the reliability of an InP/InGaAsP integrated laser modulator Hornung, V.
1996
36 11-12 p. 1919-1922
artikel
68 The application of advanced techniques for complex focused-ion-beam device modification Abramo, M.T.
1996
36 11-12 p. 1775-1778
artikel
69 The effect of hot electron stress on the dc and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs Menozzi, R.
1996
36 11-12 p. 1899-1902
artikel
70 The GaAs heterojunction bipolar transistor: an electron device with optical device reliability Henderson, T.S.
1996
36 11-12 p. 1879-1886
artikel
71 The impact of oxide degradation on the low frequency ( 1 f ) noise behaviour of P channel mosfets Hurley, Paul K.
1996
36 11-12 p. 1679-1682
artikel
72 The influence of process variations on the robustness of an audio power IC Krabbenborg, Benno
1996
36 11-12 p. 1819-1822
artikel
73 The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability Witvrouw, A.
1996
36 11-12 p. 1847-1850
artikel
74 Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage Brożek, Tomasz
1996
36 11-12 p. 1627-1630
artikel
75 Turn-on speed of grounded gate nMOS ESD protection transistors Meneghesso, G.
1996
36 11-12 p. 1735-1738
artikel
76 Validation of yield models with CMOS/SOS test structures Riviere, V.
1996
36 11-12 p. 1831-1834
artikel
77 Wafer level measurement system for sarf characterization of metal lines Ciofi, C.
1996
36 11-12 p. 1851-1854
artikel
78 Wafer level reliability: Process control for reliability Turner, Timothy E.
1996
36 11-12 p. 1839-1846
artikel
                             78 gevonden resultaten
 
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