| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AC effects in IC reliability
|
Hu, Chenming
|
|
1996
|
36 |
11-12 |
p. 1611-1617
|
artikel
|
| 2 |
A comparison of focused ion beam and electron beam induced deposition processes
|
Lipp, S.
|
|
1996
|
36 |
11-12 |
p. 1779-1782
|
artikel
|
| 3 |
A current self-limited protective device studied by LF-noise measurements
|
Modjtahedi, A.
|
|
1996
|
36 |
11-12 |
p. 1759-1762
|
artikel
|
| 4 |
Analysis of the surface base current drift in GaAs HBT's
|
Maneux, C.
|
|
1996
|
36 |
11-12 |
p. 1903-1906
|
artikel
|
| 5 |
A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
|
Degraeve, R.
|
|
1996
|
36 |
11-12 |
p. 1639-1642
|
artikel
|
| 6 |
A new method to determine the influence of thermomechanical stress on the reliability of metal lines in integrated circuits
|
Glasow, A.v.
|
|
1996
|
36 |
11-12 |
p. 1755-1758
|
artikel
|
| 7 |
A new physics-based model for time-dependent Dielectric breakdown
|
Schlund, B.J.
|
|
1996
|
36 |
11-12 |
p. 1655-1658
|
artikel
|
| 8 |
A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
|
Degraeve, R.
|
|
1996
|
36 |
11-12 |
p. 1651-1654
|
artikel
|
| 9 |
A new technique to characterize the early stages of electromigration-induced resistance changes at low current densities
|
D'Haeger, V.
|
|
1996
|
36 |
11-12 |
p. 1695-1698
|
artikel
|
| 10 |
A new wafer level reliability method for evaluation of ionic induced pmosfet drift effects
|
Dreizner, A.
|
|
1996
|
36 |
11-12 |
p. 1855-1858
|
artikel
|
| 11 |
A practical system for hot spot detection using fluorescent microthermal imaging
|
Glacet, J.-Y.
|
|
1996
|
36 |
11-12 |
p. 1811-1814
|
artikel
|
| 12 |
Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress
|
Kies, R.
|
|
1996
|
36 |
11-12 |
p. 1619-1622
|
artikel
|
| 13 |
Automotive and aerospace electronic systems. Dependability requirements
|
Rose, P.D.
|
|
1996
|
36 |
11-12 |
p. 1923-1929
|
artikel
|
| 14 |
A wafer level reliability method for short-loop processing
|
Duluc, J.B.
|
|
1996
|
36 |
11-12 |
p. 1859-1862
|
artikel
|
| 15 |
Characterisation of chip-on-board and flip chip packaging technologies by acoustic microscopy
|
Lawton, W.
|
|
1996
|
36 |
11-12 |
p. 1803-1806
|
artikel
|
| 16 |
Characterisation of reliability of compound semiconductor devices using electrical pulses
|
Brandt, M.
|
|
1996
|
36 |
11-12 |
p. 1891-1894
|
artikel
|
| 17 |
Comprehensive gate-oxide reliability evaluation for dram processes
|
Vollertsen, R.-P.
|
|
1996
|
36 |
11-12 |
p. 1631-1638
|
artikel
|
| 18 |
Comprehensive physical modeling of nmosfet hot-carrier-induced degradation
|
Lunenborg, M.M.
|
|
1996
|
36 |
11-12 |
p. 1667-1670
|
artikel
|
| 19 |
Copper interconnection lines: SARF characterization and lifetime test
|
Ciofi, C.
|
|
1996
|
36 |
11-12 |
p. 1747-1750
|
artikel
|
| 20 |
DC, LF dispersion and hf characterisation of short time stressed inp based LM-HEMTS
|
Schreurs, D.
|
|
1996
|
36 |
11-12 |
p. 1911-1914
|
artikel
|
| 21 |
Designing circuits and processes to optimize performance and reliability: Metallurgy meets tcad
|
Thompson, C.V.
|
|
1996
|
36 |
11-12 |
p. 1683-1690
|
artikel
|
| 22 |
Design of a test structure to evaluate electro-thermomigration in power ICs
|
De Munari, I.
|
|
1996
|
36 |
11-12 |
p. 1875-1878
|
artikel
|
| 23 |
Drain current dlts analysis of recoverable and permanent degradation effects in AlGaAs/GaAs AND AlGaAs/InGaAs HEMT'S
|
Meneghesso, G.
|
|
1996
|
36 |
11-12 |
p. 1895-1898
|
artikel
|
| 24 |
Effects of metallization lay-out on turn-off failure of modern power bipolar transistors
|
Busatto, G.
|
|
1996
|
36 |
11-12 |
p. 1867-1870
|
artikel
|
| 25 |
Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique
|
Ker, Ming-Dou
|
|
1996
|
36 |
11-12 |
p. 1731-1734
|
artikel
|
| 26 |
Electric field dependence of TDDB activation energy in ultrathin oxides
|
Vincent, E.
|
|
1996
|
36 |
11-12 |
p. 1643-1646
|
artikel
|
| 27 |
Enhancement of t bd of mos gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regime
|
Martini, A.
|
|
1996
|
36 |
11-12 |
p. 1647-1650
|
artikel
|
| 28 |
ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS IC's
|
Ker, Ming-Dou
|
|
1996
|
36 |
11-12 |
p. 1727-1730
|
artikel
|
| 29 |
Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation technique
|
Christiaens, F.
|
|
1996
|
36 |
11-12 |
p. 1807-1810
|
artikel
|
| 30 |
Examination of reflow resistance for copper frame smd products
|
Setoya, T.
|
|
1996
|
36 |
11-12 |
p. 1799-1802
|
artikel
|
| 31 |
Experimental validation of mechanical stress models by micro-Raman spectroscopy
|
De Wolf, I.
|
|
1996
|
36 |
11-12 |
p. 1751-1754
|
artikel
|
| 32 |
Finite element investigations of mechanical stress in metallization structures
|
Weide, K.
|
|
1996
|
36 |
11-12 |
p. 1703-1706
|
artikel
|
| 33 |
Hot-carrier reliability of N- and P-channel mosfets with polysilicon and CVD tungsten-polycide gate
|
Lou, C.L.
|
|
1996
|
36 |
11-12 |
p. 1663-1666
|
artikel
|
| 34 |
Improved critical area prediction by application of pattern recognition techniques
|
Mattick, J.H.N.
|
|
1996
|
36 |
11-12 |
p. 1815-1818
|
artikel
|
| 35 |
Influence of parasitic structures on the ESD performance of a pure bipolar process
|
Nikolaïdis, T.
|
|
1996
|
36 |
11-12 |
p. 1723-1726
|
artikel
|
| 36 |
Influence of the ferroelectric domain structure and switching properties on the endurance of PZT ferroelectric capacitors
|
Wouters, D.J.
|
|
1996
|
36 |
11-12 |
p. 1763-1766
|
artikel
|
| 37 |
In-situ monitoring of dry corrosion degradation of au ball bonds to al bond pads in plastic packages during HTSL
|
Ragay, F.W.
|
|
1996
|
36 |
11-12 |
p. 1931-1934
|
artikel
|
| 38 |
Introduction of plastic encapsulated devices in systems operating under severe temperature conditions
|
Hernandez, R
|
|
1996
|
36 |
11-12 |
p. 1943-1946
|
artikel
|
| 39 |
Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions
|
Duane, R.
|
|
1996
|
36 |
11-12 |
p. 1623-1626
|
artikel
|
| 40 |
Justifications for reducing HBM and MM ESD qualification test time
|
Verhaege, K.
|
|
1996
|
36 |
11-12 |
p. 1715-1718
|
artikel
|
| 41 |
Measurement and modeling of a new width dependence of nmosfet degradation
|
Schuler, F.
|
|
1996
|
36 |
11-12 |
p. 1675-1678
|
artikel
|
| 42 |
Method for precise determination of the statistical distribution of the input offset voltage of differential stages
|
Thewes, R.
|
|
1996
|
36 |
11-12 |
p. 1823-1826
|
artikel
|
| 43 |
Microdac — A novel approach to measure in situ deformation fields of microscopic scale
|
Vogel, D.
|
|
1996
|
36 |
11-12 |
p. 1939-1942
|
artikel
|
| 44 |
Nanoscopic evaluation of semiconductor properties by scanning probe microscopies
|
Balk, L.J.
|
|
1996
|
36 |
11-12 |
p. 1767-1774
|
artikel
|
| 45 |
New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS
|
Park, Jong Tae
|
|
1996
|
36 |
11-12 |
p. 1659-1662
|
artikel
|
| 46 |
Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults — A characterization case study using atomic force microscopy
|
Jacob, P.
|
|
1996
|
36 |
11-12 |
p. 1783-1786
|
artikel
|
| 47 |
Preface
|
Groeseneken, G.
|
|
1996
|
36 |
11-12 |
p. vii-ix
|
artikel
|
| 48 |
Pulsed stress reliability investigations of schottky diodes and HBTS
|
Schüβler, M.
|
|
1996
|
36 |
11-12 |
p. 1907-1910
|
artikel
|
| 49 |
Pulsed thermal characterization of a reverse biased pn-junction for ESD HBM simulation
|
Wolf, H.
|
|
1996
|
36 |
11-12 |
p. 1711-1714
|
artikel
|
| 50 |
Quality and reliability improvement through defect oriented failure analysis
|
de Pauw, P.
|
|
1996
|
36 |
11-12 |
p. 1835-1838
|
artikel
|
| 51 |
Question marks to the extrapolation to lower temperatures in high temperature storage life (HTSL) testing in plastic encapsulated IC'S
|
Schuddeboom, W.
|
|
1996
|
36 |
11-12 |
p. 1935-1938
|
artikel
|
| 52 |
Relation between yield and reliability of integrated circuits and application to failure rate assessment and reduction in the one digit FIT and PPM reliability ERA
|
Van Der Pol, Jacob A.
|
|
1996
|
36 |
11-12 |
p. 1603-1610
|
artikel
|
| 53 |
Relationship between profile of stressgenerated interface traps and degradation of submicron LDD mosfet's
|
Okhonin, S.
|
|
1996
|
36 |
11-12 |
p. 1671-1674
|
artikel
|
| 54 |
Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by movpe and dry etching technique
|
Mawatari, Hiroyasu
|
|
1996
|
36 |
11-12 |
p. 1915-1918
|
artikel
|
| 55 |
Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation
|
Vendrame, L.
|
|
1996
|
36 |
11-12 |
p. 1827-1830
|
artikel
|
| 56 |
Reliability indicators for lift-off of bond wires in IGBT power-modules
|
Farokhzad, B.
|
|
1996
|
36 |
11-12 |
p. 1863-1866
|
artikel
|
| 57 |
Reliability of a focused ion beam repair on digital cmos circuits
|
Van Camp, R
|
|
1996
|
36 |
11-12 |
p. 1787-1790
|
artikel
|
| 58 |
Reproducibility of field failures by ESD models — Comparison of HBM, socketed CDM and non-socketed CDM
|
Brodbeck, T.
|
|
1996
|
36 |
11-12 |
p. 1719-1722
|
artikel
|
| 59 |
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines
|
Scorzoni, A.
|
|
1996
|
36 |
11-12 |
p. 1691-1694
|
artikel
|
| 60 |
Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS-transistors
|
Musshoff, C.
|
|
1996
|
36 |
11-12 |
p. 1743-1746
|
artikel
|
| 61 |
SEGR: A unique failure mode for power MOSFETs in spacecraft
|
Allenspach, M.
|
|
1996
|
36 |
11-12 |
p. 1871-1874
|
artikel
|
| 62 |
Simulation of the gate burnout of GaAs mesfet
|
Vashchenko, V.A.
|
|
1996
|
36 |
11-12 |
p. 1887-1890
|
artikel
|
| 63 |
Simulation study for the CDM ESD behaviour of the grounded-gate nmos
|
Russ, C.
|
|
1996
|
36 |
11-12 |
p. 1739-1742
|
artikel
|
| 64 |
Soldered joints on leaded components: Development of a design tool to predict failure during temperature cycle tests
|
Wolbert, P.M.M.
|
|
1996
|
36 |
11-12 |
p. 1791-1797
|
artikel
|
| 65 |
Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry
|
Cosemans, P.
|
|
1996
|
36 |
11-12 |
p. 1699-1702
|
artikel
|
| 66 |
Study of the soft leakage current induced ESD on LDD transistor
|
Wada, Tetsuaki
|
|
1996
|
36 |
11-12 |
p. 1707-1710
|
artikel
|
| 67 |
Study on the reliability of an InP/InGaAsP integrated laser modulator
|
Hornung, V.
|
|
1996
|
36 |
11-12 |
p. 1919-1922
|
artikel
|
| 68 |
The application of advanced techniques for complex focused-ion-beam device modification
|
Abramo, M.T.
|
|
1996
|
36 |
11-12 |
p. 1775-1778
|
artikel
|
| 69 |
The effect of hot electron stress on the dc and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs
|
Menozzi, R.
|
|
1996
|
36 |
11-12 |
p. 1899-1902
|
artikel
|
| 70 |
The GaAs heterojunction bipolar transistor: an electron device with optical device reliability
|
Henderson, T.S.
|
|
1996
|
36 |
11-12 |
p. 1879-1886
|
artikel
|
| 71 |
The impact of oxide degradation on the low frequency ( 1 f ) noise behaviour of P channel mosfets
|
Hurley, Paul K.
|
|
1996
|
36 |
11-12 |
p. 1679-1682
|
artikel
|
| 72 |
The influence of process variations on the robustness of an audio power IC
|
Krabbenborg, Benno
|
|
1996
|
36 |
11-12 |
p. 1819-1822
|
artikel
|
| 73 |
The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability
|
Witvrouw, A.
|
|
1996
|
36 |
11-12 |
p. 1847-1850
|
artikel
|
| 74 |
Threshold voltage degradation in plasma-damaged CMOS transistors — Role of electron and hole traps related to charging damage
|
Brożek, Tomasz
|
|
1996
|
36 |
11-12 |
p. 1627-1630
|
artikel
|
| 75 |
Turn-on speed of grounded gate nMOS ESD protection transistors
|
Meneghesso, G.
|
|
1996
|
36 |
11-12 |
p. 1735-1738
|
artikel
|
| 76 |
Validation of yield models with CMOS/SOS test structures
|
Riviere, V.
|
|
1996
|
36 |
11-12 |
p. 1831-1834
|
artikel
|
| 77 |
Wafer level measurement system for sarf characterization of metal lines
|
Ciofi, C.
|
|
1996
|
36 |
11-12 |
p. 1851-1854
|
artikel
|
| 78 |
Wafer level reliability: Process control for reliability
|
Turner, Timothy E.
|
|
1996
|
36 |
11-12 |
p. 1839-1846
|
artikel
|
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