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                             27 results found
no title author magazine year volume issue page(s) type
1 A feasibility study on potential of stress sensors to detect solder joint defects toward prognostics of power modules Usui, Masanori

137 C p.
article
2 A general approach for degradation modeling to enable a widespread use of aging simulations in IC design Lange, André

137 C p.
article
3 Aluminium corrosion in power semiconductor devices Leppänen, J.

137 C p.
article
4 Analysis of the stress state in QFN package during four point bending and temperature experiments utilizing piezoresistive stress sensor Riegel, Daniel

137 C p.
article
5 Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET Alberton, Saulo G.

137 C p.
article
6 Corrigendum to “Wettable flank routable thin MicroLeadFrame for automotive applications” [Microelectron. Reliab. 135 (2022) 114602] Kim, Byong Jin

137 C p.
article
7 DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: A simulation study Tiwari, Shreyas

137 C p.
article
8 Editorial Board
137 C p.
article
9 Enhanced reliability of phosphor-converted white light-emitting diodes based on a laser-cured silicone encapsulant layer Lee, Yu Seong

137 C p.
article
10 Equivalent thermal model of through silicon via and bump for advanced packaging of integrated circuits Nie, Chuanjun

137 C p.
article
11 Evaluation of the helium hermeticity reliability of copper through-glass vias Okoro, Chukwudi

137 C p.
article
12 `Failure analysis of short-circuit failure of metal-oxide-metal capacitor Wang, Yan

137 C p.
article
13 Failure mechanism and life estimate of metallized film capacitor under high temperature and humidity Tai, Yunxiao

137 C p.
article
14 Fatigue of copper films subjected to high-strain rate thermo-mechanical pulsing Moser, Sebastian

137 C p.
article
15 FIB-SEM based 3D tomography of micro-electronic components: Application to automotive high-definition LED lighting systems Noçairi, Safa

137 C p.
article
16 Flexible privilege management for microcontroller-class RISC-V cores Cilardo, Alessandro

137 C p.
article
17 Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs Wang, Lihao

137 C p.
article
18 Impact of THT-hole dimensioning on manufacturability in selective wave soldering Seidel, Reinhardt

137 C p.
article
19 In-field test solution for enhancing safety in automotive applications Abotbol, Yehonatan

137 C p.
article
20 Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current García Cozzi, R.

137 C p.
article
21 Interdiffusion and formation of intermetallic compounds in high-temperature power electronics substrate joints fabricated by transient liquid phase bonding Imediegwu, Chidinma

137 C p.
article
22 50 MeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature Hegde, Vinayakprasanna N.

137 C p.
article
23 Observation framework of errors in microprocessors with machine learning location inference of radiation-induced faults Thomet, Sébastien

137 C p.
article
24 Optimization of Ag-alloy ribbon bonding — An approach to reliable interconnection for high power IC packaging Chen, Chun-Hao

137 C p.
article
25 Phase field study on the effect of roughness on interfacial intermetallic compounds of micro-solder joints under multifield coupling Guo, Hao

137 C p.
article
26 Three-parameter Weibull distribution with upper limit applicable in reliability studies and materials testing Kohout, Jan

137 C p.
article
27 TID evaluation based on variabilities of space radiation and device failure dose in typical navigation satellite orbits Wang, Jian-zhao

137 C p.
article
                             27 results found
 
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