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                             18 results found
no title author magazine year volume issue page(s) type
1 Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials Revelant, A.
 2013
 88 C p. 54-60
7 p.
 article
2 Characteristics control of room-temperature operating single electron transistor with floating gate by charge pump circuit Nozue, Motoki
 2013
 88 C p. 61-64
4 p.
 article
3 Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 Martin, Dominik
 2013
 88 C p. 65-68
4 p.
 article
4 Editorial Board 2013
 88 C p. IFC-
1 p.
 article
5 Foreword 2013
 88 C p. 1-
1 p.
 article
6 High mobility CMOS technologies using III–V/Ge channels on Si platform Takagi, S.
 2013
 88 C p. 2-8
7 p.
 article
7 Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger, C.
 2013
 88 C p. 15-20
6 p.
 article
8 Impact of quantum effects on the short channel effects of III–V nMOSFETs in weak and strong inversion regimes Dutta, T.
 2013
 88 C p. 43-48
6 p.
 article
9 Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs Sklenard, Benoit
 2013
 88 C p. 9-14
6 p.
 article
10 Investigating doping effects on high-κ metal gate stack for effective work function engineering Leroux, C.
 2013
 88 C p. 21-26
6 p.
 article
11 Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara, M.A.
 2013
 88 C p. 37-42
6 p.
 article
12 Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs Conzatti, F.
 2013
 88 C p. 49-53
5 p.
 article
13 Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements Pittino, Federico
 2013
 88 C p. 82-88
7 p.
 article
14 Numerical simulation and modeling of thermal transient in silicon power devices Magnone, P.
 2013
 88 C p. 69-72
4 p.
 article
15 Pressure sensors based on suspended graphene membranes Smith, Anderson.D.
 2013
 88 C p. 89-94
6 p.
 article
16 Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10nm width Coquand, R.
 2013
 88 C p. 32-36
5 p.
 article
17 Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks Flachowsky, S.
 2013
 88 C p. 27-31
5 p.
 article
18 Surface potential compact model for embedded flash devices oriented to IC memory design Garetto, Davide
 2013
 88 C p. 73-81
9 p.
 article
                             18 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands