Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Titel:
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Auteur:
Martin, Dominik Yurchuk, Ekaterina Müller, Stefan Müller, Johannes Paul, Jan Sundquist, Jonas Slesazeck, Stefan Schlösser, Till van Bentum, Ralf Trentzsch, Martin Schröder, Uwe Mikolajick, Thomas