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Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs |
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Titel: |
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs |
Auteur: |
Sklenard, Benoit Batude, Perrine Rafhay, Quentin Martin-Bragado, Ignacio Xu, Cuiqin Previtali, Bernard Colombeau, Benjamin Khaja, Fareen-Adeni Cristoloveanu, Sorin Rivallin, Pierrette Tavernier, Clement Poiroux, Thierry |
Verschenen in: |
Solid-state electronics |
Paginering: |
Jaargang 88 (2013) nr. C pagina's 6 p. |
Jaar: |
2013 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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