| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials
|
Revelant, A.
|
|
2013
|
88 |
C |
p. 54-60
7 p.
|
artikel
|
| 2 |
Characteristics control of room-temperature operating single electron transistor with floating gate by charge pump circuit
|
Nozue, Motoki
|
|
2013
|
88 |
C |
p. 61-64
4 p.
|
artikel
|
| 3 |
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
|
Martin, Dominik
|
|
2013
|
88 |
C |
p. 65-68
4 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
2013
|
88 |
C |
p. IFC-
1 p.
|
artikel
|
| 5 |
Foreword
|
|
|
2013
|
88 |
C |
p. 1-
1 p.
|
artikel
|
| 6 |
High mobility CMOS technologies using III–V/Ge channels on Si platform
|
Takagi, S.
|
|
2013
|
88 |
C |
p. 2-8
7 p.
|
artikel
|
| 7 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
|
Fenouillet-Beranger, C.
|
|
2013
|
88 |
C |
p. 15-20
6 p.
|
artikel
|
| 8 |
Impact of quantum effects on the short channel effects of III–V nMOSFETs in weak and strong inversion regimes
|
Dutta, T.
|
|
2013
|
88 |
C |
p. 43-48
6 p.
|
artikel
|
| 9 |
Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
|
Sklenard, Benoit
|
|
2013
|
88 |
C |
p. 9-14
6 p.
|
artikel
|
| 10 |
Investigating doping effects on high-κ metal gate stack for effective work function engineering
|
Leroux, C.
|
|
2013
|
88 |
C |
p. 21-26
6 p.
|
artikel
|
| 11 |
Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
|
Negara, M.A.
|
|
2013
|
88 |
C |
p. 37-42
6 p.
|
artikel
|
| 12 |
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
|
Conzatti, F.
|
|
2013
|
88 |
C |
p. 49-53
5 p.
|
artikel
|
| 13 |
Numerical and analytical models to investigate the AC high-frequency response of nanoelectrode/SAM/electrolyte capacitive sensing elements
|
Pittino, Federico
|
|
2013
|
88 |
C |
p. 82-88
7 p.
|
artikel
|
| 14 |
Numerical simulation and modeling of thermal transient in silicon power devices
|
Magnone, P.
|
|
2013
|
88 |
C |
p. 69-72
4 p.
|
artikel
|
| 15 |
Pressure sensors based on suspended graphene membranes
|
Smith, Anderson.D.
|
|
2013
|
88 |
C |
p. 89-94
6 p.
|
artikel
|
| 16 |
Scaling of high-κ/metal-gate TriGate SOI nanowire transistors down to 10nm width
|
Coquand, R.
|
|
2013
|
88 |
C |
p. 32-36
5 p.
|
artikel
|
| 17 |
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks
|
Flachowsky, S.
|
|
2013
|
88 |
C |
p. 27-31
5 p.
|
artikel
|
| 18 |
Surface potential compact model for embedded flash devices oriented to IC memory design
|
Garetto, Davide
|
|
2013
|
88 |
C |
p. 73-81
9 p.
|
artikel
|
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