| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain
|
Najmzadeh, M.
|
|
2012
|
74 |
C |
p. 114-120
7 p.
|
artikel
|
| 2 |
ALD high-k layer grating couplers for single and double slot on-chip SOI photonics
|
Naiini, Maziar M.
|
|
2012
|
74 |
C |
p. 58-63
6 p.
|
artikel
|
| 3 |
AlGaN/GaN power amplifiers for ISM applications
|
Krausse, D.
|
|
2012
|
74 |
C |
p. 108-113
6 p.
|
artikel
|
| 4 |
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
|
Czornomaz, L.
|
|
2012
|
74 |
C |
p. 71-76
6 p.
|
artikel
|
| 5 |
Comparative study of circuit perspectives for multi-gate structures at sub-10nm node
|
Lacord, J.
|
|
2012
|
74 |
C |
p. 25-31
7 p.
|
artikel
|
| 6 |
Compensation of externally applied mechanical stress by stacking of ultrathin chips
|
Endler, Stefan
|
|
2012
|
74 |
C |
p. 102-107
6 p.
|
artikel
|
| 7 |
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices
|
Maconi, A.
|
|
2012
|
74 |
C |
p. 64-70
7 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
2012
|
74 |
C |
p. IFC-
1 p.
|
artikel
|
| 9 |
Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition
|
Endo, Kazuhiko
|
|
2012
|
74 |
C |
p. 13-18
6 p.
|
artikel
|
| 10 |
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs
|
Kawanago, T.
|
|
2012
|
74 |
C |
p. 2-6
5 p.
|
artikel
|
| 11 |
Foreword
|
Östling, Mikael
|
|
2012
|
74 |
C |
p. 1-
1 p.
|
artikel
|
| 12 |
Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks
|
Henkel, Christoph
|
|
2012
|
74 |
C |
p. 7-12
6 p.
|
artikel
|
| 13 |
Nanoscale carrier injectors for high luminescence Si-based LEDs
|
Piccolo, G.
|
|
2012
|
74 |
C |
p. 43-48
6 p.
|
artikel
|
| 14 |
On the efficiency of stress techniques in gate-last n-type bulk FinFETs
|
Eneman, Geert
|
|
2012
|
74 |
C |
p. 19-24
6 p.
|
artikel
|
| 15 |
Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology
|
Fenouillet-Beranger, C.
|
|
2012
|
74 |
C |
p. 32-37
6 p.
|
artikel
|
| 16 |
PNP PIN bipolar phototransistors for high-speed applications built in a 180nm CMOS process
|
Kostov, P.
|
|
2012
|
74 |
C |
p. 49-57
9 p.
|
artikel
|
| 17 |
PureGaB p+n Ge diodes grown in large windows to Si with a sub-300nm transition region
|
Sammak, Amir
|
|
2012
|
74 |
C |
p. 126-133
8 p.
|
artikel
|
| 18 |
Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
|
Cao, Ji
|
|
2012
|
74 |
C |
p. 121-125
5 p.
|
artikel
|
| 19 |
The electron–hole bilayer tunnel FET
|
Lattanzio, Livio
|
|
2012
|
74 |
C |
p. 85-90
6 p.
|
artikel
|
| 20 |
Transient electro-thermal characterization of Si–Ge heterojunction bipolar transistors
|
Sahoo, Amit Kumar
|
|
2012
|
74 |
C |
p. 77-84
8 p.
|
artikel
|
| 21 |
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
|
Zhao, Q.T.
|
|
2012
|
74 |
C |
p. 97-101
5 p.
|
artikel
|
| 22 |
Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) input and output protections in nanometer technologies
|
Lee, Jian-Hsing
|
|
2012
|
74 |
C |
p. 134-141
8 p.
|
artikel
|
| 23 |
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations
|
Nazir, Aftab
|
|
2012
|
74 |
C |
p. 38-42
5 p.
|
artikel
|
| 24 |
Virtually dopant-free CMOS: Midgap Schottky-barrier nanowire field-effect-transistors for high temperature applications
|
Wessely, F.
|
|
2012
|
74 |
C |
p. 91-96
6 p.
|
artikel
|
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