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Details for article 15 of 24 found articles
| Title: |
Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology |
| Author: |
Fenouillet-Beranger, C. Perreau, P. Boulenc, P. Tosti, L. Barnola, S. Andrieu, F. Weber, O. Beneyton, R. Perrot, C. de Buttet, C. Abbate, F. Campidelli, Y. Pinzelli, L. Gouraud, P. Margain, A. Peru, S. Bourdelle, K.K. Nguyen, B.Y. Boedt, F. Poiroux, T. Faynot, O. Skotnicki, T. Boeuf, F. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 74 (2012) nr. C pages 6 p. |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 15 of 24 found articles
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