| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures
|
Piotrowicz, C.
|
|
|
194 |
C |
p.
|
artikel
|
| 2 |
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
|
Garzón, Esteban
|
|
|
194 |
C |
p.
|
artikel
|
| 3 |
A new normalized direct conductance method for observation of Poole-Frenkel current
|
Aounallah, Belkhir
|
|
|
194 |
C |
p.
|
artikel
|
| 4 |
An extended-temperature I-V model for GaN HEMTs
|
Yang, Jie
|
|
|
194 |
C |
p.
|
artikel
|
| 5 |
Assessment of paper-based MoS2 FET for Physically Unclonable Functions
|
Vatalaro, Massimo
|
|
|
194 |
C |
p.
|
artikel
|
| 6 |
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
|
Lizzit, Daniel
|
|
|
194 |
C |
p.
|
artikel
|
| 7 |
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
|
Dollfus, P.
|
|
|
194 |
C |
p.
|
artikel
|
| 8 |
Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing
|
Amor, S.
|
|
|
194 |
C |
p.
|
artikel
|
| 9 |
Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data
|
do Nascimento Tolêdo, Rodrigo
|
|
|
194 |
C |
p.
|
artikel
|
| 10 |
Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs
|
Valdivieso, C.
|
|
|
194 |
C |
p.
|
artikel
|
| 11 |
Cross-coupling effects in common-source current mirrors composed by UTBB transistors
|
José da Costa, Fernando
|
|
|
194 |
C |
p.
|
artikel
|
| 12 |
Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs
|
Han, Yi
|
|
|
194 |
C |
p.
|
artikel
|
| 13 |
DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets
|
Cretu, B.
|
|
|
194 |
C |
p.
|
artikel
|
| 14 |
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4
|
Izmailov, R.A.
|
|
|
194 |
C |
p.
|
artikel
|
| 15 |
Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables
|
Britton, Giovani
|
|
|
194 |
C |
p.
|
artikel
|
| 16 |
Design of RRAM with high storage capacity and high reliability for IoT applications
|
Wang, Jianjian
|
|
|
194 |
C |
p.
|
artikel
|
| 17 |
DFT-based layered dielectric model of few-layer MoS2
|
Donetti, L.
|
|
|
194 |
C |
p.
|
artikel
|
| 18 |
Double Reference Layer STT-MRAM Structures with Improved Performance
|
Loch, Wilton Jaciel
|
|
|
194 |
C |
p.
|
artikel
|
| 19 |
Editorial Board
|
|
|
|
194 |
C |
p.
|
artikel
|
| 20 |
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon
|
Driussi, Francesco
|
|
|
194 |
C |
p.
|
artikel
|
| 21 |
Effect of doping on Al2O3/GaN MOS capacitance
|
Rrustemi, B.
|
|
|
194 |
C |
p.
|
artikel
|
| 22 |
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
|
Mavropoulis, A.
|
|
|
194 |
C |
p.
|
artikel
|
| 23 |
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K
|
Mariniello, Genaro
|
|
|
194 |
C |
p.
|
artikel
|
| 24 |
Engineering of metal-MoS2 contacts to overcome Fermi level pinning
|
Khakbaz, P.
|
|
|
194 |
C |
p.
|
artikel
|
| 25 |
Enhanced statistical detection of random telegraph noise in frequency and time domain
|
Gauthier, Owen
|
|
|
194 |
C |
p.
|
artikel
|
| 26 |
Experimental study of thermal coupling effects in FD-SOI MOSFET
|
Vanbrabant, Martin
|
|
|
194 |
C |
p.
|
artikel
|
| 27 |
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor
|
Neckel Wesling, Bruno
|
|
|
194 |
C |
p.
|
artikel
|
| 28 |
Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology
|
Chen, Hualun
|
|
|
194 |
C |
p.
|
artikel
|
| 29 |
Field emission properties of carbon cloth-supported SnO2 with different morphological structures
|
Liu, Min
|
|
|
194 |
C |
p.
|
artikel
|
| 30 |
Finite element modeling of spin–orbit torques
|
Jørstad, Nils Petter
|
|
|
194 |
C |
p.
|
artikel
|
| 31 |
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations
|
Balestra, Luigi
|
|
|
194 |
C |
p.
|
artikel
|
| 32 |
Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K
|
Bonen, Shai
|
|
|
194 |
C |
p.
|
artikel
|
| 33 |
Heterodyne mixing in self-local oscillator plasmonic diodes
|
Karishy, S.
|
|
|
194 |
C |
p.
|
artikel
|
| 34 |
High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications
|
Moulin, M.
|
|
|
194 |
C |
p.
|
artikel
|
| 35 |
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices
|
Mroczyński, Robert
|
|
|
194 |
C |
p.
|
artikel
|
| 36 |
Impact of substrate resistivity on spiral inductors at mm-wave frequencies
|
Nyssens, Lucas
|
|
|
194 |
C |
p.
|
artikel
|
| 37 |
Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs
|
Simoen, Eddy
|
|
|
194 |
C |
p.
|
artikel
|
| 38 |
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations
|
Bischoff, Carl
|
|
|
194 |
C |
p.
|
artikel
|
| 39 |
Interface effects in ultra-scaled MRAM cells
|
Bendra, M.
|
|
|
194 |
C |
p.
|
artikel
|
| 40 |
Interface traps density extraction through transient measurements in junctionless transistors
|
Teixeira da Fonte, Ewerton
|
|
|
194 |
C |
p.
|
artikel
|
| 41 |
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations
|
Kriekouki, Ioanna
|
|
|
194 |
C |
p.
|
artikel
|
| 42 |
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method
|
Yan, Yiyi
|
|
|
194 |
C |
p.
|
artikel
|
| 43 |
Modeling and optimization of graphene ballistic rectifiers
|
Truccolo, D.
|
|
|
194 |
C |
p.
|
artikel
|
| 44 |
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines
|
Helleboid, Rémi
|
|
|
194 |
C |
p.
|
artikel
|
| 45 |
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules
|
Tian, Changfa
|
|
|
194 |
C |
p.
|
artikel
|
| 46 |
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise
|
Asanovski, Ruben
|
|
|
194 |
C |
p.
|
artikel
|
| 47 |
Organic field-effect transistors with density of states modified by polymer-enhanced solvent vapor annealing
|
Wu, Jie
|
|
|
194 |
C |
p.
|
artikel
|
| 48 |
Parallel nanowire sensors with a high-k gate oxide for the sensitive operation in liquids
|
Popov, V.P.
|
|
|
194 |
C |
p.
|
artikel
|
| 49 |
Parasitic oscillation in the low-frequency noise characterization of solar cells
|
Wulles, Chloé
|
|
|
194 |
C |
p.
|
artikel
|
| 50 |
Performance of FDSOI double-gate dual-doped reconfigurable FETs
|
Navarro, C.
|
|
|
194 |
C |
p.
|
artikel
|
| 51 |
Phonon-assisted transport in van der Waals heterostructure tunnel devices
|
M'foukh, A.
|
|
|
194 |
C |
p.
|
artikel
|
| 52 |
Reconfigurable field effect transistors: A technology enablers perspective
|
Mikolajick, T.
|
|
|
194 |
C |
p.
|
artikel
|
| 53 |
Retention failure recovery technique for 3D TLC NAND flash memory via wordline (WL) interference
|
Yang, Liu
|
|
|
194 |
C |
p.
|
artikel
|
| 54 |
RF performances at cryogenic temperature of inductors integrated in a FDSOI technology
|
Berlingard, Quentin
|
|
|
194 |
C |
p.
|
artikel
|
| 55 |
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency
|
Kar Chowdhury, Nikita
|
|
|
194 |
C |
p.
|
artikel
|
| 56 |
Sensitivity implications for programmable transistor based 1T-DRAM
|
Nirala, Rohit Kumar
|
|
|
194 |
C |
p.
|
artikel
|
| 57 |
Si GAA NW FETs threshold voltage evaluation
|
Dobrescu, Dragos
|
|
|
194 |
C |
p.
|
artikel
|
| 58 |
Signal to noise ratio in nanoscale bioFETs
|
Bergfeld Mori, Carlos Augusto
|
|
|
194 |
C |
p.
|
artikel
|
| 59 |
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing
|
De Rose, Raffaele
|
|
|
194 |
C |
p.
|
artikel
|
| 60 |
SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes
|
Saludes-Tapia, M.
|
|
|
194 |
C |
p.
|
artikel
|
| 61 |
Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source
|
Rezaei, Ali
|
|
|
194 |
C |
p.
|
artikel
|
| 62 |
Strong efficiency enhancement of organic light-emitting devices using pin type structures
|
Wu, Lishuang
|
|
|
194 |
C |
p.
|
artikel
|
| 63 |
Structural and electrical investigation of MI2M and MI3M diodes for improved non-linear, low bias rectification
|
Nemr Noureddine, I.
|
|
|
194 |
C |
p.
|
artikel
|
| 64 |
Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides
|
Popov, V.P.
|
|
|
194 |
C |
p.
|
artikel
|
| 65 |
Study of gate current in advanced MOS architectures
|
Gauhar, Ghulam Ali
|
|
|
194 |
C |
p.
|
artikel
|
| 66 |
Study of threshold voltage extraction from room temperature down to 4.2 K on 28 nm FD-SOI CMOS technology
|
Berlingard, Quentin
|
|
|
194 |
C |
p.
|
artikel
|
| 67 |
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
|
García, H.
|
|
|
194 |
C |
p.
|
artikel
|
| 68 |
Superiority of core–shell junctionless FETs
|
Cristoloveanu, S.
|
|
|
194 |
C |
p.
|
artikel
|
| 69 |
Synaptic transistors based on transparent oxide for neural image recognition
|
Wang, Q.N.
|
|
|
194 |
C |
p.
|
artikel
|
| 70 |
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications
|
Morozzi, Arianna
|
|
|
194 |
C |
p.
|
artikel
|
| 71 |
TCAD simulations of FDSOI devices down to deep cryogenic temperature
|
Catapano, E.
|
|
|
194 |
C |
p.
|
artikel
|
| 72 |
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors
|
Giuliano, Federico
|
|
|
194 |
C |
p.
|
artikel
|
| 73 |
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor
|
Singh, Khoirom Johnson
|
|
|
194 |
C |
p.
|
artikel
|
| 74 |
Versatile experimental setup for FTJ characterization
|
Massarotto, M.
|
|
|
194 |
C |
p.
|
artikel
|
Tijdschrift beschrijving