| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
|
Pereira, A.S.N.
|
|
2017
|
128 |
C |
p. 67-71
5 p.
|
artikel
|
| 2 |
Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
|
Šimonka, Vito
|
|
2017
|
128 |
C |
p. 135-140
6 p.
|
artikel
|
| 3 |
Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
|
Park, H.J.
|
|
2017
|
128 |
C |
p. 80-86
7 p.
|
artikel
|
| 4 |
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
|
Strangio, S.
|
|
2017
|
128 |
C |
p. 37-42
6 p.
|
artikel
|
| 5 |
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14nm UTBB FDSOI technology
|
Berthelon, R.
|
|
2017
|
128 |
C |
p. 72-79
8 p.
|
artikel
|
| 6 |
Confinement orientation effects in S/D tunneling
|
Medina-Bailon, C.
|
|
2017
|
128 |
C |
p. 48-53
6 p.
|
artikel
|
| 7 |
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
|
Deshpande, V.
|
|
2017
|
128 |
C |
p. 87-91
5 p.
|
artikel
|
| 8 |
Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs
|
Karatsori, T.A.
|
|
2017
|
128 |
C |
p. 31-36
6 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2017
|
128 |
C |
p. IFC-
1 p.
|
artikel
|
| 10 |
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2
|
Grossi, Alessandro
|
|
2017
|
128 |
C |
p. 187-193
7 p.
|
artikel
|
| 11 |
Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements
|
Tomaszewski, Daniel
|
|
2017
|
128 |
C |
p. 92-101
10 p.
|
artikel
|
| 12 |
Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity
|
Manstetten, Paul
|
|
2017
|
128 |
C |
p. 141-147
7 p.
|
artikel
|
| 13 |
Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM
|
Takamura, Yota
|
|
2017
|
128 |
C |
p. 194-199
6 p.
|
artikel
|
| 14 |
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part II: Measurements and results
|
Boudier, D.
|
|
2017
|
128 |
C |
p. 109-114
6 p.
|
artikel
|
| 15 |
Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology
|
Boudier, D.
|
|
2017
|
128 |
C |
p. 102-108
7 p.
|
artikel
|
| 16 |
Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection
|
Jungemann, C.
|
|
2017
|
128 |
C |
p. 129-134
6 p.
|
artikel
|
| 17 |
Process modules for GeSn nanoelectronics with high Sn-contents
|
Schulte-Braucks, C.
|
|
2017
|
128 |
C |
p. 54-59
6 p.
|
artikel
|
| 18 |
Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
|
Navarro, C.
|
|
2017
|
128 |
C |
p. 155-162
8 p.
|
artikel
|
| 19 |
Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology
|
Athanasiou, Sotirios
|
|
2017
|
128 |
C |
p. 172-179
8 p.
|
artikel
|
| 20 |
Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology
|
Mohamad, B.
|
|
2017
|
128 |
C |
p. 10-16
7 p.
|
artikel
|
| 21 |
RF SOI CMOS technology on 1st and 2nd generation trap-rich high resistivity SOI wafers
|
Kazemi Esfeh, B.
|
|
2017
|
128 |
C |
p. 121-128
8 p.
|
artikel
|
| 22 |
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
|
Elmessary, Muhammad A.
|
|
2017
|
128 |
C |
p. 17-24
8 p.
|
artikel
|
| 23 |
Sharp-switching band-modulation back-gated devices in advanced FDSOI technology
|
El Dirani, Hassan
|
|
2017
|
128 |
C |
p. 180-186
7 p.
|
artikel
|
| 24 |
Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology
|
Vignetti, M.M.
|
|
2017
|
128 |
C |
p. 163-171
9 p.
|
artikel
|
| 25 |
SOI technology for power management in automotive and industrial applications
|
Stork, Johannes M.C.
|
|
2017
|
128 |
C |
p. 3-9
7 p.
|
artikel
|
| 26 |
Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016
|
Sverdlov, Viktor
|
|
2017
|
128 |
C |
p. 1-2
2 p.
|
artikel
|
| 27 |
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
|
Agopian, Paula Ghedini Der
|
|
2017
|
128 |
C |
p. 43-47
5 p.
|
artikel
|
| 28 |
Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K
|
Paz, Bruna Cardoso
|
|
2017
|
128 |
C |
p. 60-66
7 p.
|
artikel
|
| 29 |
Systematic method for electrical characterization of random telegraph noise in MOSFETs
|
Marquez, Carlos
|
|
2017
|
128 |
C |
p. 115-120
6 p.
|
artikel
|
| 30 |
Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors
|
Baldauf, Tim
|
|
2017
|
128 |
C |
p. 148-154
7 p.
|
artikel
|
| 31 |
Variability and self-average of impurity-limited resistance in quasi-one dimensional nanowires
|
Sano, Nobuyuki
|
|
2017
|
128 |
C |
p. 25-30
6 p.
|
artikel
|
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