nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs
|
Alagi, F. |
|
2011 |
51 |
2 |
p. 321-325 5 p. |
artikel |
2 |
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition
|
Oukaour, A. |
|
2011 |
51 |
2 |
p. 386-391 6 p. |
artikel |
3 |
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
|
Kuball, Martin |
|
2011 |
51 |
2 |
p. 195-200 6 p. |
artikel |
4 |
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
|
Douglas, E.A. |
|
2011 |
51 |
2 |
p. 207-211 5 p. |
artikel |
5 |
A model for residual life prediction based on Brownian motion with an adaptive drift
|
Wang, Wenbin |
|
2011 |
51 |
2 |
p. 285-293 9 p. |
artikel |
6 |
An accurate model for soft error rate estimation considering dynamic voltage and frequency scaling effects
|
Firouzi, Farshad |
|
2011 |
51 |
2 |
p. 460-467 8 p. |
artikel |
7 |
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime
|
Raffo, Antonio |
|
2011 |
51 |
2 |
p. 235-239 5 p. |
artikel |
8 |
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection
|
Ma, Chenyue |
|
2011 |
51 |
2 |
p. 337-341 5 p. |
artikel |
9 |
A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion
|
Mari, D. |
|
2011 |
51 |
2 |
p. 229-234 6 p. |
artikel |
10 |
Application of genetic algorithms for electronic devices placement in structures with heat conduction through the substrate
|
Felczak, M. |
|
2011 |
51 |
2 |
p. 453-459 7 p. |
artikel |
11 |
Application of Machine Model ESD tester to high volume capacitor reliability testing
|
Meeder, Michael G. |
|
2011 |
51 |
2 |
p. 246-251 6 p. |
artikel |
12 |
Automatic data mining for telemetry database of computer systems
|
Wu, C.-H. |
|
2011 |
51 |
2 |
p. 263-269 7 p. |
artikel |
13 |
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements
|
Ivo, P. |
|
2011 |
51 |
2 |
p. 217-223 7 p. |
artikel |
14 |
Complex system maintainability verification with limited samples
|
Miao, Qiang |
|
2011 |
51 |
2 |
p. 294-299 6 p. |
artikel |
15 |
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
|
Cäsar, M. |
|
2011 |
51 |
2 |
p. 224-228 5 p. |
artikel |
16 |
Drainage ratio impact on void creation in gold interconnect
|
Littleton, Dave |
|
2011 |
51 |
2 |
p. 240-245 6 p. |
artikel |
17 |
Editorial
|
Ersland, Peter |
|
2011 |
51 |
2 |
p. 187- 1 p. |
artikel |
18 |
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
|
Arslan, Engin |
|
2011 |
51 |
2 |
p. 370-375 6 p. |
artikel |
19 |
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
|
Roy, Tania |
|
2011 |
51 |
2 |
p. 212-216 5 p. |
artikel |
20 |
Forecasting electronic part procurement lifetimes to enable the management of DMSMS obsolescence
|
Sandborn, P. |
|
2011 |
51 |
2 |
p. 392-399 8 p. |
artikel |
21 |
Health-monitoring method of note PC for cooling performance degradation and load assessment
|
Hirohata, Kenji |
|
2011 |
51 |
2 |
p. 255-262 8 p. |
artikel |
22 |
Health monitoring of electronic products based on Mahalanobis distance and Weibull decision metrics
|
Niu, Gang |
|
2011 |
51 |
2 |
p. 279-284 6 p. |
artikel |
23 |
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2S X +UV interface treatment
|
Lin, Chao-Wei |
|
2011 |
51 |
2 |
p. 381-385 5 p. |
artikel |
24 |
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer
|
Roda Neve, C. |
|
2011 |
51 |
2 |
p. 326-331 6 p. |
artikel |
25 |
Improved performance of trench power MOSFET with SiGeC-based channel
|
Wang, Ying |
|
2011 |
51 |
2 |
p. 376-380 5 p. |
artikel |
26 |
Improved single-pass approach for reliability analysis of digital combinational circuits
|
Seyyed Mahdavi, S.J. |
|
2011 |
51 |
2 |
p. 477-484 8 p. |
artikel |
27 |
Inside front cover - Editorial board
|
|
|
2011 |
51 |
2 |
p. IFC- 1 p. |
artikel |
28 |
Interfacial microstructure and bonding strength of Sn–3Ag–0.5Cu and Sn–3Ag–0.5Cu–0.5Ce–xZn solder BGA packages with immersion Ag surface finish
|
Lin, Hsiu-Jen |
|
2011 |
51 |
2 |
p. 445-452 8 p. |
artikel |
29 |
Investigation of power Trench MOSFETs with retrograde body profile
|
Wang, Ying |
|
2011 |
51 |
2 |
p. 513-516 4 p. |
artikel |
30 |
Maintenance strategy optimization using a continuous-state partially observable semi-Markov decision process
|
Zhou, Yifan |
|
2011 |
51 |
2 |
p. 300-309 10 p. |
artikel |
31 |
Maximum error modeling for fault-tolerant computation using maximum a posteriori (MAP) hypothesis
|
Lingasubramanian, Karthikeyan |
|
2011 |
51 |
2 |
p. 485-501 17 p. |
artikel |
32 |
Micromechanical analysis of copper trace in printed circuit boards
|
Hu, Guojun |
|
2011 |
51 |
2 |
p. 416-424 9 p. |
artikel |
33 |
Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling
|
Agyakwa, P.A. |
|
2011 |
51 |
2 |
p. 406-415 10 p. |
artikel |
34 |
Operability diagram of drop formation and its response to temperature variation in a piezoelectric inkjet nozzle
|
Shin, Pyungho |
|
2011 |
51 |
2 |
p. 437-444 8 p. |
artikel |
35 |
Rapid design space exploration by hybrid fuzzy search approach for optimal architecture determination of multi objective computing systems
|
Sengupta, Anirban |
|
2011 |
51 |
2 |
p. 502-512 11 p. |
artikel |
36 |
Reducing arbitrary choices in model building for prognostics: An approach by applying parsimony principle on an evolving neuro-fuzzy system
|
El-Koujok, Mohamed |
|
2011 |
51 |
2 |
p. 310-320 11 p. |
artikel |
37 |
Reliability evaluation of logic circuits using probabilistic gate models
|
Han, Jie |
|
2011 |
51 |
2 |
p. 468-476 9 p. |
artikel |
38 |
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
|
Joh, Jungwoo |
|
2011 |
51 |
2 |
p. 201-206 6 p. |
artikel |
39 |
Solder interconnection failure time estimation based on the embedded precursor behaviour modelling
|
Voutilainen, Juha-Veikko |
|
2011 |
51 |
2 |
p. 425-436 12 p. |
artikel |
40 |
Special Issue on Prognostics and Health Management
|
Lau, Daniel |
|
2011 |
51 |
2 |
p. 253-254 2 p. |
artikel |
41 |
Structural health monitoring based on continuous ACO method
|
Yu, Ling |
|
2011 |
51 |
2 |
p. 270-278 9 p. |
artikel |
42 |
Study of current saturation behaviors in dual direction SCR for ESD applications
|
Han, Yan |
|
2011 |
51 |
2 |
p. 332-336 5 p. |
artikel |
43 |
The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height
|
Dökme, İlbilge |
|
2011 |
51 |
2 |
p. 360-364 5 p. |
artikel |
44 |
The ROCS Workshop and 25years of compound semiconductor reliability
|
Roesch, William J. |
|
2011 |
51 |
2 |
p. 188-194 7 p. |
artikel |
45 |
Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation
|
Juang, Miin-Horng |
|
2011 |
51 |
2 |
p. 365-369 5 p. |
artikel |
46 |
8T vs. 6T SRAM cell radiation robustness: A comparative analysis
|
Alorda, Bartomeu |
|
2011 |
51 |
2 |
p. 350-359 10 p. |
artikel |
47 |
Using EWMA control schemes for monitoring wafer quality in negative binomial process
|
Yu, Fong-Jung |
|
2011 |
51 |
2 |
p. 400-405 6 p. |
artikel |
48 |
Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
|
Álvarez-Botero, Germán |
|
2011 |
51 |
2 |
p. 342-349 8 p. |
artikel |