1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
Titel:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
Auteur:
Roy, Tania Puzyrev, Yevgeniy S. Zhang, En Xia DasGupta, Sandeepan Francis, Sarah A. Fleetwood, Daniel M. Schrimpf, Ronald D. Mishra, Umesh K. Speck, James S. Pantelides, Sokrates T.