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                             48 results found
no title author magazine year volume issue page(s) type
1 A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs Alagi, F.
2011
51 2 p. 321-325
5 p.
article
2 Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition Oukaour, A.
2011
51 2 p. 386-391
6 p.
article
3 AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes Kuball, Martin
2011
51 2 p. 195-200
6 p.
article
4 AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress Douglas, E.A.
2011
51 2 p. 207-211
5 p.
article
5 A model for residual life prediction based on Brownian motion with an adaptive drift Wang, Wenbin
2011
51 2 p. 285-293
9 p.
article
6 An accurate model for soft error rate estimation considering dynamic voltage and frequency scaling effects Firouzi, Farshad
2011
51 2 p. 460-467
8 p.
article
7 Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime Raffo, Antonio
2011
51 2 p. 235-239
5 p.
article
8 A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection Ma, Chenyue
2011
51 2 p. 337-341
5 p.
article
9 A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion Mari, D.
2011
51 2 p. 229-234
6 p.
article
10 Application of genetic algorithms for electronic devices placement in structures with heat conduction through the substrate Felczak, M.
2011
51 2 p. 453-459
7 p.
article
11 Application of Machine Model ESD tester to high volume capacitor reliability testing Meeder, Michael G.
2011
51 2 p. 246-251
6 p.
article
12 Automatic data mining for telemetry database of computer systems Wu, C.-H.
2011
51 2 p. 263-269
7 p.
article
13 Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements Ivo, P.
2011
51 2 p. 217-223
7 p.
article
14 Complex system maintainability verification with limited samples Miao, Qiang
2011
51 2 p. 294-299
6 p.
article
15 Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs Cäsar, M.
2011
51 2 p. 224-228
5 p.
article
16 Drainage ratio impact on void creation in gold interconnect Littleton, Dave
2011
51 2 p. 240-245
6 p.
article
17 Editorial Ersland, Peter
2011
51 2 p. 187-
1 p.
article
18 Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures Arslan, Engin
2011
51 2 p. 370-375
6 p.
article
19 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions Roy, Tania
2011
51 2 p. 212-216
5 p.
article
20 Forecasting electronic part procurement lifetimes to enable the management of DMSMS obsolescence Sandborn, P.
2011
51 2 p. 392-399
8 p.
article
21 Health-monitoring method of note PC for cooling performance degradation and load assessment Hirohata, Kenji
2011
51 2 p. 255-262
8 p.
article
22 Health monitoring of electronic products based on Mahalanobis distance and Weibull decision metrics Niu, Gang
2011
51 2 p. 279-284
6 p.
article
23 High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2S X +UV interface treatment Lin, Chao-Wei
2011
51 2 p. 381-385
5 p.
article
24 Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer Roda Neve, C.
2011
51 2 p. 326-331
6 p.
article
25 Improved performance of trench power MOSFET with SiGeC-based channel Wang, Ying
2011
51 2 p. 376-380
5 p.
article
26 Improved single-pass approach for reliability analysis of digital combinational circuits Seyyed Mahdavi, S.J.
2011
51 2 p. 477-484
8 p.
article
27 Inside front cover - Editorial board 2011
51 2 p. IFC-
1 p.
article
28 Interfacial microstructure and bonding strength of Sn–3Ag–0.5Cu and Sn–3Ag–0.5Cu–0.5Ce–xZn solder BGA packages with immersion Ag surface finish Lin, Hsiu-Jen
2011
51 2 p. 445-452
8 p.
article
29 Investigation of power Trench MOSFETs with retrograde body profile Wang, Ying
2011
51 2 p. 513-516
4 p.
article
30 Maintenance strategy optimization using a continuous-state partially observable semi-Markov decision process Zhou, Yifan
2011
51 2 p. 300-309
10 p.
article
31 Maximum error modeling for fault-tolerant computation using maximum a posteriori (MAP) hypothesis Lingasubramanian, Karthikeyan
2011
51 2 p. 485-501
17 p.
article
32 Micromechanical analysis of copper trace in printed circuit boards Hu, Guojun
2011
51 2 p. 416-424
9 p.
article
33 Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling Agyakwa, P.A.
2011
51 2 p. 406-415
10 p.
article
34 Operability diagram of drop formation and its response to temperature variation in a piezoelectric inkjet nozzle Shin, Pyungho
2011
51 2 p. 437-444
8 p.
article
35 Rapid design space exploration by hybrid fuzzy search approach for optimal architecture determination of multi objective computing systems Sengupta, Anirban
2011
51 2 p. 502-512
11 p.
article
36 Reducing arbitrary choices in model building for prognostics: An approach by applying parsimony principle on an evolving neuro-fuzzy system El-Koujok, Mohamed
2011
51 2 p. 310-320
11 p.
article
37 Reliability evaluation of logic circuits using probabilistic gate models Han, Jie
2011
51 2 p. 468-476
9 p.
article
38 Role of stress voltage on structural degradation of GaN high-electron-mobility transistors Joh, Jungwoo
2011
51 2 p. 201-206
6 p.
article
39 Solder interconnection failure time estimation based on the embedded precursor behaviour modelling Voutilainen, Juha-Veikko
2011
51 2 p. 425-436
12 p.
article
40 Special Issue on Prognostics and Health Management Lau, Daniel
2011
51 2 p. 253-254
2 p.
article
41 Structural health monitoring based on continuous ACO method Yu, Ling
2011
51 2 p. 270-278
9 p.
article
42 Study of current saturation behaviors in dual direction SCR for ESD applications Han, Yan
2011
51 2 p. 332-336
5 p.
article
43 The analysis of I–V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height Dökme, İlbilge
2011
51 2 p. 360-364
5 p.
article
44 The ROCS Workshop and 25years of compound semiconductor reliability Roesch, William J.
2011
51 2 p. 188-194
7 p.
article
45 Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation Juang, Miin-Horng
2011
51 2 p. 365-369
5 p.
article
46 8T vs. 6T SRAM cell radiation robustness: A comparative analysis Alorda, Bartomeu
2011
51 2 p. 350-359
10 p.
article
47 Using EWMA control schemes for monitoring wafer quality in negative binomial process Yu, Fong-Jung
2011
51 2 p. 400-405
6 p.
article
48 Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs Álvarez-Botero, Germán
2011
51 2 p. 342-349
8 p.
article
                             48 results found
 
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