| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Electroforming of Si/SiO2/W Structures with an Exposed Nanometer-Thick SiO2Layer
|
V. M. Mordvintsev
|
|
2001
|
30 |
5 |
p. 303-311
9 p.
|
artikel
|
| 2 |
Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer
|
Mordvintsev, V. M.
|
|
2001
|
30 |
5 |
p. 303-311
|
artikel
|
| 3 |
Electron-Beam Two-Stream Instability in Quantum-Effect Structures
|
A. E. Dubinov
|
|
2001
|
30 |
5 |
p. 339-341
3 p.
|
artikel
|
| 4 |
Electron-Beam Two-Stream Instability in Quantum-Effect Structures
|
Dubinov, A. E.
|
|
2001
|
30 |
5 |
p. 339-341
|
artikel
|
| 5 |
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III
|
A. A. Orlikovskii
|
|
2001
|
30 |
5 |
p. 275-294
20 p.
|
artikel
|
| 6 |
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III
|
Orlikovskii, A. A.
|
|
2001
|
30 |
5 |
p. 275-294
|
artikel
|
| 7 |
Local Modification of the Optical Constants of Polymeric Films by Ion Implantation
|
A. V. Leont'ev
|
|
2001
|
30 |
5 |
p. 324-329
6 p.
|
artikel
|
| 8 |
Local Modification of the Optical Constants of Polymeric Films by Ion Implantation
|
Leont'ev, A. V.
|
|
2001
|
30 |
5 |
p. 324-329
|
artikel
|
| 9 |
Phase Formation during the Surface-Diffusion Growth of TiCoSiN and TiCoN Thin Films on Si and SiO2
|
A. G. Vasiliev
|
|
2001
|
30 |
5 |
p. 295-302
8 p.
|
artikel
|
| 10 |
Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2
|
Vasiliev, A. G.
|
|
2001
|
30 |
5 |
p. 295-302
|
artikel
|
| 11 |
Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen Argon Mixture
|
A. I. Stognij
|
|
2001
|
30 |
5 |
p. 330-334
5 p.
|
artikel
|
| 12 |
Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture
|
Stognij, A. I.
|
|
2001
|
30 |
5 |
p. 330-334
|
artikel
|
| 13 |
Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2
|
E. I. Gol'dman
|
|
2001
|
30 |
5 |
p. 312-316
5 p.
|
artikel
|
| 14 |
Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2
|
Gol'dman, E. I.
|
|
2001
|
30 |
5 |
p. 312-316
|
artikel
|
| 15 |
The Effect of Contact Window Cleaning and Doping in BF3 H2and BF3 H2 CF4Plasmas on the Mop-Si Contact Resistance
|
Yu. P. Snitovskii
|
|
2001
|
30 |
5 |
p. 335-338
4 p.
|
artikel
|
| 16 |
The Effect of Contact Window Cleaning and Doping in BF3+ H2and BF3+ H2+ CF4Plasmas on the Mo–p+-Si Contact Resistance
|
Snitovskii, Yu. P.
|
|
2001
|
30 |
5 |
p. 335-338
|
artikel
|
| 17 |
Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the Transition Layer at the Si/SiO2Interface in the Presence of Impurities
|
G. Ya. Krasnikov
|
|
2001
|
30 |
5 |
p. 317-323
7 p.
|
artikel
|
| 18 |
Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the Transition Layer at the Si/SiO2Interface in the Presence of Impurities
|
Krasnikov, G. Ya.
|
|
2001
|
30 |
5 |
p. 317-323
|
artikel
|
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