| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A four-bias three-layer graphene-based THz absorber
|
Barimani, Samaneh
|
|
|
20 |
3 |
p. 1332-1342
|
artikel
|
| 2 |
A multilayer graphene-based absorber for the sub-THz regime
|
Malekshahi, Nafiseh
|
|
|
20 |
3 |
p. 1343-1353
|
artikel
|
| 3 |
Analysis of the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using a single-phase-lag (SPL) model
|
Echouchene, Fraj
|
|
|
20 |
3 |
p. 1422-1429
|
artikel
|
| 4 |
Analytical estimation of breakdown voltage in insulated-gate bipolar transistors
|
Zhu, Chen
|
|
|
20 |
3 |
p. 1202-1208
|
artikel
|
| 5 |
An analysis of interface trap charges to improve the reliability of a charge-plasma-based nanotube tunnel FET
|
Gedam, Anju
|
|
|
20 |
3 |
p. 1157-1168
|
artikel
|
| 6 |
An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes
|
Ranjith, R.
|
|
|
20 |
3 |
p. 1125-1136
|
artikel
|
| 7 |
A new analytical model for the response of AlGaN/GaN HEMT-based pH sensors
|
Upadhyay, Kavita Thorat
|
|
|
20 |
3 |
p. 1400-1410
|
artikel
|
| 8 |
An ultra-energy-efficient crosstalk-immune interconnect architecture based on multilayer graphene nanoribbons for deep-nanometer technologies
|
Karimi, Reza
|
|
|
20 |
3 |
p. 1411-1421
|
artikel
|
| 9 |
A terabit-per-second all-optical four-bit digital-to-analog converter using quantum dot semiconductor optical amplifiers
|
Mukherjee, Kousik
|
|
|
20 |
3 |
p. 1270-1276
|
artikel
|
| 10 |
Capacitance matching by optimizing the geometry of a ferroelectric HfO2-based gate for voltage amplification
|
Chen, K.-T.
|
|
|
20 |
3 |
p. 1209-1215
|
artikel
|
| 11 |
Channel-hot-carrier degradation in the channel of junctionless transistors: a device- and circuit-level perspective
|
Panchore, Meena
|
|
|
20 |
3 |
p. 1196-1201
|
artikel
|
| 12 |
Design and numerical analysis of Zeonex-based photonic crystal fiber for application in different types of communication networks
|
Hossain, Md. Selim
|
|
|
20 |
3 |
p. 1289-1295
|
artikel
|
| 13 |
Designing digital circuits using 3D nanomagnetic logic architectures
|
Bhoi, Bandan Kumar
|
|
|
20 |
3 |
p. 1310-1325
|
artikel
|
| 14 |
DFT calculations of optoelectronic properties of cubic In1-xAlx2O3 alloys
|
Alkhalifah, M. S.
|
|
|
20 |
3 |
p. 1234-1247
|
artikel
|
| 15 |
Doping engineering to enhance the performance of double-gate pMOSFETs with ultrashort gate length (5 nm)
|
Khaliq, Afshan
|
|
|
20 |
3 |
p. 1178-1186
|
artikel
|
| 16 |
Electron transport properties of electrically doped guanine nano-sheet based bio-Zener diode: a first principle paradigm
|
Dey, Debarati
|
|
|
20 |
3 |
p. 1083-1095
|
artikel
|
| 17 |
Exploring the optical properties of exposed-core-based photonic-crystal fibers
|
Mitu, Sumaiya Akhtar
|
|
|
20 |
3 |
p. 1260-1269
|
artikel
|
| 18 |
Gyrotropy and magnetic fluid dependences of magneto-optical properties in YIG-magnetic photonic crystal fiber
|
Saker, Khadidja
|
|
|
20 |
3 |
p. 1326-1331
|
artikel
|
| 19 |
Highly dispersive optical solitons with a polynomial law of refractive index by Laplace–Adomian decomposition
|
González-Gaxiola, O.
|
|
|
20 |
3 |
p. 1216-1223
|
artikel
|
| 20 |
Immunity to random fluctuations induced by interface trap variability in Si gate-all-around n-nanowire field-effect transistor devices
|
Sudarsanan, Akhil
|
|
|
20 |
3 |
p. 1169-1177
|
artikel
|
| 21 |
Investigation of 6-armchair graphene nanoribbon tunnel FETs
|
Aghanejad Ahmadchally, Alireza
|
|
|
20 |
3 |
p. 1114-1124
|
artikel
|
| 22 |
Investigation of the interaction of amphetamine drug with Zn12O12 nanocage: a quantum chemical study
|
Ma, Huaifen
|
|
|
20 |
3 |
p. 1065-1071
|
artikel
|
| 23 |
New nanoscale band-to-band tunneling junctionless GNRFETs: potential high-performance devices for the ultrascaled regime
|
Tamersit, Khalil
|
|
|
20 |
3 |
p. 1147-1156
|
artikel
|
| 24 |
New p-type sp-based half-Heusler compounds LiBaX(X = Si, Ge) for spintronics and thermoelectricity via ab-initio calculations
|
Bentata, R.
|
|
|
20 |
3 |
p. 1072-1082
|
artikel
|
| 25 |
New tunable resistorless grounded meminductor emulator
|
Kumar, Keshab
|
|
|
20 |
3 |
p. 1452-1460
|
artikel
|
| 26 |
Novel design of a triple band PIFA antenna by using a binary genetic algorithm
|
Wakrim, Layla
|
|
|
20 |
3 |
p. 1373-1386
|
artikel
|
| 27 |
Optical absorption in bilayer graphene superlattices
|
Azadi, L.
|
|
|
20 |
3 |
p. 1248-1259
|
artikel
|
| 28 |
Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity
|
Ghosh, Soumava
|
|
|
20 |
3 |
p. 1224-1233
|
artikel
|
| 29 |
Performable enhancement of C220-based dyes via inserting auxiliary electron acceptors for dye-sensitized solar cells: a theoretical investigation
|
Zhao, Caibin
|
|
|
20 |
3 |
p. 1277-1288
|
artikel
|
| 30 |
Simulation study of an optimized current matching for In0.39Ga0.61N/In0.57Ga0.43N/In0.74Ga0.26N triple-junction solar cells
|
Marouf, Y.
|
|
|
20 |
3 |
p. 1296-1309
|
artikel
|
| 31 |
Skin exposed 5 GHz antenna safety challenges and radiation performances analysis based on method of moments
|
Khadhraoui, Imen
|
|
|
20 |
3 |
p. 1363-1372
|
artikel
|
| 32 |
Study on induced work-function variation of titanium metal gate on various electrical parameters for delta-doped layer germanium source vertical tunnel FET
|
Vanlalawmpuia, K.
|
|
|
20 |
3 |
p. 1137-1146
|
artikel
|
| 33 |
The design and simulation of a MOSFET-based MEMS pressure sensor using an integrated simulation approach
|
Wolde, Workneh
|
|
|
20 |
3 |
p. 1387-1399
|
artikel
|
| 34 |
The interaction of nucleobases with an AlN nanotube for electronic DNA sequencing
|
Fu, Xiao
|
|
|
20 |
3 |
p. 1096-1104
|
artikel
|
| 35 |
The mitigation of signal integrity issues in coupled MWCNT bundles and a comparison with Cu interconnects
|
Mudavath, Raju
|
|
|
20 |
3 |
p. 1430-1438
|
artikel
|
| 36 |
The Numerov process over a non-uniform grid
|
Brunetti, R.
|
|
|
20 |
3 |
p. 1105-1113
|
artikel
|
| 37 |
Theoretical circuit modeling of tetra bands DNG metamaterial by transmission line theory with very small frequency
|
Chaurasia, Praveen
|
|
|
20 |
3 |
p. 1439-1451
|
artikel
|
| 38 |
The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability
|
Vudumula, Pavan
|
|
|
20 |
3 |
p. 1187-1195
|
artikel
|
| 39 |
Ultra-high-sensitive sensor based on a metal–insulator–metal waveguide coupled with cross cavity
|
Hocini, Abdesselam
|
|
|
20 |
3 |
p. 1354-1362
|
artikel
|
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