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Journal description
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Details for article 38 of 39 found articles
| Title: |
The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability |
| Author: |
Vudumula, Pavan Kotamraju, Siva |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 20 () nr. 3 pages 1187-1195 |
| Year: |
2021-04-05 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 38 of 39 found articles
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