| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advancements in THM-Grown CdZnTe for Use as Substrates for HgCdTe
|
MacKenzie, Jason
|
|
2013
|
42 |
11 |
p. 3129-3132
|
artikel
|
| 2 |
Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy
|
Jacobs, R. N.
|
|
2013
|
42 |
11 |
p. 3148-3155
|
artikel
|
| 3 |
A Novel Metal-Rich Anneal for In Vacuo Passivation of High-Aspect-Ratio Mercury Cadmium Telluride Surfaces
|
Wan, Chang-Feng
|
|
2013
|
42 |
11 |
p. 3359-3366
|
artikel
|
| 4 |
Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors
|
Buurma, Christopher
|
|
2013
|
42 |
11 |
p. 3283-3287
|
artikel
|
| 5 |
Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem?
|
Garland, James W.
|
|
2013
|
42 |
11 |
p. 3331-3336
|
artikel
|
| 6 |
A Slightly Oxidizing Etchant for Polishing of CdTe and CdZnTe Surfaces
|
Ivanits’ka, V. G.
|
|
2013
|
42 |
11 |
p. 3059-3065
|
artikel
|
| 7 |
Atomic-Scale Characterization of II–VI Compound Semiconductors
|
Smith, David J.
|
|
2013
|
42 |
11 |
p. 3168-3174
|
artikel
|
| 8 |
Characterization of Plasma Etching Process Damage in HgCdTe
|
Gaucher, A.
|
|
2013
|
42 |
11 |
p. 3006-3014
|
artikel
|
| 9 |
Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers
|
Farrell, S.
|
|
2013
|
42 |
11 |
p. 3097-3102
|
artikel
|
| 10 |
Correlations of Bridgman-Grown Cd0.9Zn0.1Te Propertieswith Different Ampoule Rotation Schemes
|
Datta, Amlan
|
|
2013
|
42 |
11 |
p. 3041-3053
|
artikel
|
| 11 |
Cross-Sectional Study of Macrodefects in MBE Dual-Band HgCdTe on CdZnTe
|
Reddy, M.
|
|
2013
|
42 |
11 |
p. 3114-3118
|
artikel
|
| 12 |
Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe
|
Umana-Membreno, G. A.
|
|
2013
|
42 |
11 |
p. 3108-3113
|
artikel
|
| 13 |
Design of Dislocation-Compensated ZnSySe1−y/GaAs (001) Heterostructures
|
Kujofsa, T.
|
|
2013
|
42 |
11 |
p. 3034-3040
|
artikel
|
| 14 |
Determination of Critical Thickness for Epitaxial ZnTe Layers Grown by Molecular Beam Epitaxy on (211)B and (100) GaSb Substrates
|
Chai, J.
|
|
2013
|
42 |
11 |
p. 3090-3096
|
artikel
|
| 15 |
Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities
|
Rago, P.B.
|
|
2013
|
42 |
11 |
p. 3066-3070
|
artikel
|
| 16 |
Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator
|
Chan, P.-Y.
|
|
2013
|
42 |
11 |
p. 3259-3266
|
artikel
|
| 17 |
1/f Noise in HgCdTe Focal-Plane Arrays
|
Kinch, M.A.
|
|
2013
|
42 |
11 |
p. 3243-3251
|
artikel
|
| 18 |
Foreword
|
Sivananthan, S.
|
|
2013
|
42 |
11 |
p. 2999-3000
|
artikel
|
| 19 |
Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers
|
Jain, F.
|
|
2013
|
42 |
11 |
p. 3191-3202
|
artikel
|
| 20 |
Ge-ZnSSe Spatial Wavefunction Switched (SWS) FETs to Implement Multibit SRAMs and Novel Quaternary Logic
|
Gogna, P.
|
|
2013
|
42 |
11 |
p. 3337-3343
|
artikel
|
| 21 |
High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays
|
Vilela, M. F.
|
|
2013
|
42 |
11 |
p. 3231-3238
|
artikel
|
| 22 |
History of the “Detector Materials Engineering” Crystal Growth Process for Bulk Hg1−xCdxTe
|
Higgins, W. M.
|
|
2013
|
42 |
11 |
p. 3320-3330
|
artikel
|
| 23 |
Impact of Surface Treatment on the Structural and Electronic Properties of Polished CdZnTe Surfaces for Radiation Detectors
|
Tari, Suleyman
|
|
2013
|
42 |
11 |
p. 3252-3258
|
artikel
|
| 24 |
Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates
|
Benson, J. D.
|
|
2013
|
42 |
11 |
p. 3217-3223
|
artikel
|
| 25 |
Interaction Between AsHg and VHg in Arsenic-Doped Hg1−xCdxTe
|
Wang, Ziyan
|
|
2013
|
42 |
11 |
p. 3054-3058
|
artikel
|
| 26 |
Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures
|
Guo, N.
|
|
2013
|
42 |
11 |
p. 3181-3185
|
artikel
|
| 27 |
Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence
|
Connelly, Blair C.
|
|
2013
|
42 |
11 |
p. 3203-3210
|
artikel
|
| 28 |
Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches
|
Ye, Z. H.
|
|
2013
|
42 |
11 |
p. 3164-3167
|
artikel
|
| 29 |
Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication
|
Gravrand, O.
|
|
2013
|
42 |
11 |
p. 3349-3358
|
artikel
|
| 30 |
Large-Format and Long-Wavelength Infrared Mercury Cadmium Telluride Detectors
|
Wenisch, J.
|
|
2013
|
42 |
11 |
p. 3186-3190
|
artikel
|
| 31 |
Low-Frequency Noise Characteristics of HgCdTe Infrared Photodiodes Operating at High Temperatures
|
Hassis, W.
|
|
2013
|
42 |
11 |
p. 3288-3296
|
artikel
|
| 32 |
Low-Temperature Photoluminescence Study of CdTe:In Crystals Annealed in Molten Bismuth
|
Yang, G.
|
|
2013
|
42 |
11 |
p. 3138-3141
|
artikel
|
| 33 |
Modeling of Dark Current in HgCdTe Infrared Detectors
|
Ferron, A.
|
|
2013
|
42 |
11 |
p. 3303-3308
|
artikel
|
| 34 |
Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE
|
Kodama, Richard
|
|
2013
|
42 |
11 |
p. 3239-3242
|
artikel
|
| 35 |
Novel Multistate Quantum Dot Gate FETs Using SiO2 and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators
|
Lingalugari, M.
|
|
2013
|
42 |
11 |
p. 3156-3163
|
artikel
|
| 36 |
Numerical Analysis of Current–Voltage Characteristics of LWIR nBn and p-on-n HgCdTe Photodetectors
|
Kopytko, M.
|
|
2013
|
42 |
11 |
p. 3211-3216
|
artikel
|
| 37 |
Numerical Simulation and Analytical Modeling of InAs nBn Infrared Detectors with p-Type Barriers
|
Reine, Marion
|
|
2013
|
42 |
11 |
p. 3015-3033
|
artikel
|
| 38 |
Numerical Simulation of Spatial and Spectral Crosstalk in Two-Color MWIR/LWIR HgCdTe Infrared Detector Arrays
|
Pinkie, Benjamin
|
|
2013
|
42 |
11 |
p. 3080-3089
|
artikel
|
| 39 |
Performance of 12-μm- to 15-μm-Pitch MWIR and LWIR HgCdTe FPAs at Elevated Temperatures
|
Strong, Roger L.
|
|
2013
|
42 |
11 |
p. 3103-3107
|
artikel
|
| 40 |
Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
|
Yasuda, K.
|
|
2013
|
42 |
11 |
p. 3125-3128
|
artikel
|
| 41 |
Quantum Dot Gate Three-State and Nonvolatile Memory Field-Effect Transistors Using a ZnS/ZnMgS/ZnS Heteroepitaxial Stack as a Tunnel Insulator on Silicon-on-Insulator Substrates
|
Suarez, Ernesto
|
|
2013
|
42 |
11 |
p. 3275-3282
|
artikel
|
| 42 |
Raymond S. Balcerak, Paul W. Kruse, Thad D. Pickenpaugh, and Jan F. Schetzina: In Memoriam
|
Reine, Marion
|
|
2013
|
42 |
11 |
p. 3001-3005
|
artikel
|
| 43 |
Simulation of Current Transport in Polycrystalline CdTe Solar Cells
|
Troni, F.
|
|
2013
|
42 |
11 |
p. 3175-3180
|
artikel
|
| 44 |
Strain Determination in Quasi-Lattice-Matched LWIR HgCdTe/CdZnTe Layers
|
Ballet, P.
|
|
2013
|
42 |
11 |
p. 3133-3137
|
artikel
|
| 45 |
Superlattice and Quantum Dot Unipolar Barrier Infrared Detectors
|
Ting, David Z.-Y.
|
|
2013
|
42 |
11 |
p. 3071-3079
|
artikel
|
| 46 |
TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates
|
Kim, Jae Jin
|
|
2013
|
42 |
11 |
p. 3142-3147
|
artikel
|
| 47 |
The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe
|
Wright, Jonathan S.
|
|
2013
|
42 |
11 |
p. 3119-3124
|
artikel
|
| 48 |
Theoretical Modeling of HOT HgCdTe Barrier Detectors for the Mid-Wave Infrared Range
|
Martyniuk, P.
|
|
2013
|
42 |
11 |
p. 3309-3319
|
artikel
|
| 49 |
The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing
|
Lennon, C. M.
|
|
2013
|
42 |
11 |
p. 3344-3348
|
artikel
|
| 50 |
Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth
|
Ji, H.
|
|
2013
|
42 |
11 |
p. 3297-3302
|
artikel
|
| 51 |
Variable-Field Hall Measurement and Transport in LWSingle-Layer n-Type MBE Hg1−xCdxTe
|
Brown, A. E.
|
|
2013
|
42 |
11 |
p. 3224-3230
|
artikel
|
| 52 |
Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications
|
Khan, J.
|
|
2013
|
42 |
11 |
p. 3267-3274
|
artikel
|
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