| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate modeling of low-cost SiGe:C-HBTs using adaptive neuro-fuzzy inference system
|
Chakravorty, A.
|
|
2005
|
8 |
1-3 |
p. 307-311
5 p.
|
artikel
|
| 2 |
A compact 21GHz inductorless differential quadrature ring oscillator implemented in SiGe HBT technology
|
Lance Kuo, Wei-Min
|
|
2005
|
8 |
1-3 |
p. 445-449
5 p.
|
artikel
|
| 3 |
A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
|
Lee, Sun-Ghil
|
|
2005
|
8 |
1-3 |
p. 215-218
4 p.
|
artikel
|
| 4 |
A DC–10GHz amplifier with digital offset correction
|
Gustat, Hans
|
|
2005
|
8 |
1-3 |
p. 439-443
5 p.
|
artikel
|
| 5 |
Advances in surfactant-mediated growth of germanium on silicon: high-quality p-type Ge films on Si
|
Wietler, Tobias F.
|
|
2005
|
8 |
1-3 |
p. 73-77
5 p.
|
artikel
|
| 6 |
A fully integrated low-power low-jitter clock synthesizer with 1.2GHz tuning range in SiGe:C BiCMOS
|
Gustat, Hans
|
|
2005
|
8 |
1-3 |
p. 451-458
8 p.
|
artikel
|
| 7 |
A 117GHz LC-oscillator in SiGe:C BiCMOS technology
|
Winkler, Wolfgang
|
|
2005
|
8 |
1-3 |
p. 459-461
3 p.
|
artikel
|
| 8 |
A high throughput, ultra-low roughness, SiGe-free strained Si regrowth process
|
Leitz, Christopher
|
|
2005
|
8 |
1-3 |
p. 187-192
6 p.
|
artikel
|
| 9 |
Analysis of growth rate during Si epitaxy by hydrogen coverage model
|
Sugiyama, N.
|
|
2005
|
8 |
1-3 |
p. 11-14
4 p.
|
artikel
|
| 10 |
Application of plasma oxidation to strained-Si/SiGe MOSFET
|
Nishisaka, Mika
|
|
2005
|
8 |
1-3 |
p. 225-230
6 p.
|
artikel
|
| 11 |
A simple electrical approach to extracting the difference in bandgap across neutral base for SiGe HBT's
|
Fu, J.
|
|
2005
|
8 |
1-3 |
p. 301-306
6 p.
|
artikel
|
| 12 |
Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH4 reaction
|
Sugawara, Katsutoshi
|
|
2005
|
8 |
1-3 |
p. 69-72
4 p.
|
artikel
|
| 13 |
400°C Formation of poly-SiGe on SiO2 by Au-induced lateral crystallization
|
Kanno, Hiroshi
|
|
2005
|
8 |
1-3 |
p. 79-82
4 p.
|
artikel
|
| 14 |
Changes in elastic deformation of strained Si by microfabrication
|
Arimoto, Keisuke
|
|
2005
|
8 |
1-3 |
p. 181-185
5 p.
|
artikel
|
| 15 |
Characterisation of virtual substrates with ultra-thin Si0.6Ge0.4 strain relaxed buffers
|
Lyutovich, Klara
|
|
2005
|
8 |
1-3 |
p. 149-153
5 p.
|
artikel
|
| 16 |
Characterization of strained Si structures using SIMS and visible Raman
|
Goodman, Gary G.
|
|
2005
|
8 |
1-3 |
p. 255-260
6 p.
|
artikel
|
| 17 |
Contents pages
|
|
|
2005
|
8 |
1-3 |
p. iii-viii
nvt p.
|
artikel
|
| 18 |
Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection
|
Spadafora, M.
|
|
2005
|
8 |
1-3 |
p. 219-224
6 p.
|
artikel
|
| 19 |
Effect of annealing on interface state density of Ni-silicided/Si1− x Ge x Schottky diode
|
Saha, A.R.
|
|
2005
|
8 |
1-3 |
p. 249-253
5 p.
|
artikel
|
| 20 |
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
|
Jeong, Youngcheon
|
|
2005
|
8 |
1-3 |
p. 121-124
4 p.
|
artikel
|
| 21 |
Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition
|
Kurosawa, Takehisa
|
|
2005
|
8 |
1-3 |
p. 125-129
5 p.
|
artikel
|
| 22 |
Electroluminescence of Ge/SiGe p-MODFETs
|
Richard, S.
|
|
2005
|
8 |
1-3 |
p. 377-382
6 p.
|
artikel
|
| 23 |
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
|
Romanjuk, B.
|
|
2005
|
8 |
1-3 |
p. 171-175
5 p.
|
artikel
|
| 24 |
Evaluating and designing the optimal 2D collector profile for a 300GHz SiGe HBT
|
Stricker, Andreas D.
|
|
2005
|
8 |
1-3 |
p. 295-299
5 p.
|
artikel
|
| 25 |
Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
|
Eneman, Geert
|
|
2005
|
8 |
1-3 |
p. 337-342
6 p.
|
artikel
|
| 26 |
Ge-enhanced MILC velocity in a-Ge/a-Si/SiO2 layered structure
|
Kanno, Hiroshi
|
|
2005
|
8 |
1-3 |
p. 83-88
6 p.
|
artikel
|
| 27 |
Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy
|
Nikiforov, A.I.
|
|
2005
|
8 |
1-3 |
p. 47-50
4 p.
|
artikel
|
| 28 |
Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations
|
Taoka, Noriyuki
|
|
2005
|
8 |
1-3 |
p. 131-135
5 p.
|
artikel
|
| 29 |
High-frequency SiGe:C HBTs with elevated extrinsic base regions
|
Rücker, H.
|
|
2005
|
8 |
1-3 |
p. 279-282
4 p.
|
artikel
|
| 30 |
High-performance SiGe heterostructure FET grown on silicon-on-insulator
|
Wei Chien, Pei
|
|
2005
|
8 |
1-3 |
p. 367-370
4 p.
|
artikel
|
| 31 |
High-performance (110)-surface strained-SOI MOSFETs
|
Mizuno, T.
|
|
2005
|
8 |
1-3 |
p. 327-336
10 p.
|
artikel
|
| 32 |
High PVCR Si/Si1− x Ge x DW RTD formed with new triple-layer buffer
|
Maekawa, Hirotaka
|
|
2005
|
8 |
1-3 |
p. 417-421
5 p.
|
artikel
|
| 33 |
H+ implantation-enhanced stress relaxation in c-Si1− x Ge x on SiO2 during oxidation-induced Ge condensation process
|
Sadoh, T.
|
|
2005
|
8 |
1-3 |
p. 167-170
4 p.
|
artikel
|
| 34 |
Improvement in epitaxial quality of selectively grown Si1− x Ge x layers with low pattern sensitivity for CMOS applications
|
Radamson, H.H.
|
|
2005
|
8 |
1-3 |
p. 25-30
6 p.
|
artikel
|
| 35 |
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
|
Hållstedt, J.
|
|
2005
|
8 |
1-3 |
p. 97-101
5 p.
|
artikel
|
| 36 |
Initial growth behaviors of SiGeC in SiGe and C alternate deposition
|
Takeuchi, Shotaro
|
|
2005
|
8 |
1-3 |
p. 5-9
5 p.
|
artikel
|
| 37 |
In situ defect etching of strained-Si layers with HCl gas
|
Kreuzer, Stephan
|
|
2005
|
8 |
1-3 |
p. 143-147
5 p.
|
artikel
|
| 38 |
Integration of Si p–i–n diodes for light emitter and detector with optical waveguides
|
Yamada, Atsushi
|
|
2005
|
8 |
1-3 |
p. 435-438
4 p.
|
artikel
|
| 39 |
Kinetic formation and optical properties of self-assembled Ge/Si hut clusters
|
Nguyen-Duc, T.K.
|
|
2005
|
8 |
1-3 |
p. 41-46
6 p.
|
artikel
|
| 40 |
Lateral scaling challenges for SiGe NPN BiCMOS process integration
|
U’Ren, Greg D.
|
|
2005
|
8 |
1-3 |
p. 313-317
5 p.
|
artikel
|
| 41 |
Low-temperature molecular beam epitaxy of Ge on Si
|
Leitão, J.P.
|
|
2005
|
8 |
1-3 |
p. 35-39
5 p.
|
artikel
|
| 42 |
Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing
|
Rzaev, M.
|
|
2005
|
8 |
1-3 |
p. 137-141
5 p.
|
artikel
|
| 43 |
Native oxide removal from SiGe using mixtures of HF and water delivered by aqueous, gas, and supercritical CO2 processes
|
Xie, Bo
|
|
2005
|
8 |
1-3 |
p. 231-237
7 p.
|
artikel
|
| 44 |
NiSi integration in a non-selective base SiGeC HBT process
|
Haralson, Erik
|
|
2005
|
8 |
1-3 |
p. 245-248
4 p.
|
artikel
|
| 45 |
Noise behavior of SiGe n-MODFETS
|
Rennane, A.
|
|
2005
|
8 |
1-3 |
p. 383-388
6 p.
|
artikel
|
| 46 |
[No title]
|
Kasper, E.
|
|
2005
|
8 |
1-3 |
p. 3-4
2 p.
|
artikel
|
| 47 |
Obituary
|
|
|
2005
|
8 |
1-3 |
p. 1-
1 p.
|
artikel
|
| 48 |
Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures
|
Sawano, K.
|
|
2005
|
8 |
1-3 |
p. 177-180
4 p.
|
artikel
|
| 49 |
Optimal Ge profile design for base transit time of Si/SiGe HBTs
|
Chang, S.T.
|
|
2005
|
8 |
1-3 |
p. 289-294
6 p.
|
artikel
|
| 50 |
Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes
|
Jin, Niu
|
|
2005
|
8 |
1-3 |
p. 411-416
6 p.
|
artikel
|
| 51 |
pMOSFETs with recessed and selectively regrown Si1− x Ge x source/drain junctions
|
Isheden, Christian
|
|
2005
|
8 |
1-3 |
p. 359-362
4 p.
|
artikel
|
| 52 |
Process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single-SiGe substrate
|
Nebrich, L.
|
|
2005
|
8 |
1-3 |
p. 429-433
5 p.
|
artikel
|
| 53 |
Properties and applications of SiGe nanodots
|
Wang, K.L.
|
|
2005
|
8 |
1-3 |
p. 389-399
11 p.
|
artikel
|
| 54 |
Quantification of Ge and B in SiGe using secondary ion mass spectrometry
|
Ehrke, H.-Ulrich
|
|
2005
|
8 |
1-3 |
p. 111-114
4 p.
|
artikel
|
| 55 |
Resonance phase operation of a SiGe HBT
|
Heim, Sandra
|
|
2005
|
8 |
1-3 |
p. 319-322
4 p.
|
artikel
|
| 56 |
Separation by bonding Si Islands (SBSI) for LSI applications
|
Yamazaki, T.
|
|
2005
|
8 |
1-3 |
p. 59-63
5 p.
|
artikel
|
| 57 |
Sidewall protection by nitrogen and oxygen in poly-Si1− x Ge x anisotropic etching using Cl2/N2/O2 plasma
|
Cho, Hang-Sup
|
|
2005
|
8 |
1-3 |
p. 239-243
5 p.
|
artikel
|
| 58 |
Si epitaxial growth on atomic-order nitrided Si(100) using electron cyclotron resonance plasma
|
Mori, Masaki
|
|
2005
|
8 |
1-3 |
p. 65-68
4 p.
|
artikel
|
| 59 |
SiGeC HBTs : The TCAD Challenge Reduced to Practice
|
Decoutere, Stefaan
|
|
2005
|
8 |
1-3 |
p. 283-288
6 p.
|
artikel
|
| 60 |
SiGe heterostucture field-effect transistor with ICP mesa treatments
|
Lee, Chun Hsin
|
|
2005
|
8 |
1-3 |
p. 371-375
5 p.
|
artikel
|
| 61 |
SiGe/Si PMOSFET using graded channel technique
|
Lin, Yu Min
|
|
2005
|
8 |
1-3 |
p. 347-351
5 p.
|
artikel
|
| 62 |
Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique
|
Morris, Stephen
|
|
2005
|
8 |
1-3 |
p. 261-266
6 p.
|
artikel
|
| 63 |
Source engineering in short channel double gate vertical SiGe-MOSFETs
|
Mandal, S.K.
|
|
2005
|
8 |
1-3 |
p. 353-357
5 p.
|
artikel
|
| 64 |
Spectroscopic ellipsometry for in-line process control of SiGe:C HBT technology
|
Fursenko, O.
|
|
2005
|
8 |
1-3 |
p. 273-278
6 p.
|
artikel
|
| 65 |
Spectroscopic techniques for characterization of high-mobility strained-Si CMOS
|
Schmidt, Jens
|
|
2005
|
8 |
1-3 |
p. 267-271
5 p.
|
artikel
|
| 66 |
Step permeability effect and interlayer mass-transport in the Ge/Si(111) MBE
|
Filimonov, S.N.
|
|
2005
|
8 |
1-3 |
p. 31-34
4 p.
|
artikel
|
| 67 |
Strained-silicon MOSFET process technology—control of impurity and germanium atoms at the hetero-interface
|
Sugii, Nobuyuki
|
|
2005
|
8 |
1-3 |
p. 89-95
7 p.
|
artikel
|
| 68 |
Strained silicon on insulator (SSOI) by waferbonding
|
Christiansen, S.H.
|
|
2005
|
8 |
1-3 |
p. 197-202
6 p.
|
artikel
|
| 69 |
Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25μm heterostructure CMOS process
|
Paul, D.J.
|
|
2005
|
8 |
1-3 |
p. 343-346
4 p.
|
artikel
|
| 70 |
Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method
|
Usuda, Koji
|
|
2005
|
8 |
1-3 |
p. 155-159
5 p.
|
artikel
|
| 71 |
Strain stabilization of SiGe films on Si(001) by in situ pre-epitaxial HCL etching
|
Vogg, Günther
|
|
2005
|
8 |
1-3 |
p. 161-165
5 p.
|
artikel
|
| 72 |
Study of charge carrier quantization in strained Si-nMOSFETs
|
Nguyen, C.D.
|
|
2005
|
8 |
1-3 |
p. 363-366
4 p.
|
artikel
|
| 73 |
Study of piezoresistance in Ge x Si1− x whiskers for sensor application
|
Druzhinin, Anatolij
|
|
2005
|
8 |
1-3 |
p. 193-196
4 p.
|
artikel
|
| 74 |
Study of the poly/epi kinetic ratio in SiH4 based chemistry for new CMOS architectures
|
Talbot, Alexandre
|
|
2005
|
8 |
1-3 |
p. 21-24
4 p.
|
artikel
|
| 75 |
Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation
|
El Mubarek, H.A.W.
|
|
2005
|
8 |
1-3 |
p. 103-109
7 p.
|
artikel
|
| 76 |
The characteristic of HfO2 on strained SiGe
|
Chen, T.C.
|
|
2005
|
8 |
1-3 |
p. 209-213
5 p.
|
artikel
|
| 77 |
The future of high-K on pure germanium and its importance for Ge CMOS
|
Meuris, M.
|
|
2005
|
8 |
1-3 |
p. 203-207
5 p.
|
artikel
|
| 78 |
Transport and absorption in strain-compensated Si/Si1− x Ge x multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates
|
Grützmacher, Detlev
|
|
2005
|
8 |
1-3 |
p. 401-409
9 p.
|
artikel
|
| 79 |
TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions
|
Sibaja-Hernandez, Arturo
|
|
2005
|
8 |
1-3 |
p. 115-120
6 p.
|
artikel
|
| 80 |
Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1− x − y Ge x C y thin films on Si(001) with ethylene (C2H4) precursor as carbon source
|
Chen, P.S.
|
|
2005
|
8 |
1-3 |
p. 15-19
5 p.
|
artikel
|
| 81 |
Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30nm MOS devices
|
Thompson, Phillip E.
|
|
2005
|
8 |
1-3 |
p. 51-57
7 p.
|
artikel
|
| 82 |
3-W SiGe power HBTs for wireless applications
|
Jiang, Ningyue
|
|
2005
|
8 |
1-3 |
p. 323-326
4 p.
|
artikel
|
| 83 |
Zero biased Ge-on-Si photodetector on a thin buffer with a bandwidth of 3.2GHz at 1300nm
|
Jutzi, M.
|
|
2005
|
8 |
1-3 |
p. 423-427
5 p.
|
artikel
|
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