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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 9 of 83 found articles
| Title: |
Analysis of growth rate during Si epitaxy by hydrogen coverage model |
| Author: |
Sugiyama, N. Hirashita, N. Mizuno, T. Moriyama, Y. Takagi, S. |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 8 (2005) nr. 1-3 pages 4 p. |
| Year: |
2005 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 9 of 83 found articles
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