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                             53 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio investigation of phosphorus and boron diffusion in germanium Janke, C.
 2008
 11 5-6 p. 324-327
4 p.
 artikel
2 Ab-initio simulation of self-interstitial in germanium Śpiewak, P.
 2008
 11 5-6 p. 328-331
4 p.
 artikel
3 Accurate carrier profiling of n-type GaAs junctions Clarysse, T.
 2008
 11 5-6 p. 259-266
8 p.
 artikel
4 Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility Hutin, Louis
 2008
 11 5-6 p. 267-270
4 p.
 artikel
5 Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices Molle, A.
 2008
 11 5-6 p. 236-240
5 p.
 artikel
6 Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide Fabbri, F.
 2008
 11 5-6 p. 179-181
3 p.
 artikel
7 Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces Broqvist, Peter
 2008
 11 5-6 p. 226-229
4 p.
 artikel
8 Complexes of self-interstitials with oxygen atoms in germanium Khirunenko, L.I.
 2008
 11 5-6 p. 344-347
4 p.
 artikel
9 Density-functional theory study of Au, Ag and Cu defects in germanium Carvalho, A.
 2008
 11 5-6 p. 340-343
4 p.
 artikel
10 Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys Carvalho, A.
 2008
 11 5-6 p. 332-335
4 p.
 artikel
11 Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers Simoen, E.
 2008
 11 5-6 p. 364-367
4 p.
 artikel
12 Diffusion and activation of phosphorus in germanium Tsouroutas, P.
 2008
 11 5-6 p. 372-377
6 p.
 artikel
13 Effects of electron and proton irradiation on embedded SiGe source/drain diodes Ohyama, H.
 2008
 11 5-6 p. 310-313
4 p.
 artikel
14 Electrical characterization of defects introduced during metallization processes in n-type germanium Auret, F.D.
 2008
 11 5-6 p. 348-353
6 p.
 artikel
15 Electrical characterization of thiols self-assembled layers on GaP (111) structures Ghita, R.V.
 2008
 11 5-6 p. 394-397
4 p.
 artikel
16 Electrically active defects induced by hydrogen and helium implantations in Ge Markevich, V.P.
 2008
 11 5-6 p. 354-359
6 p.
 artikel
17 Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium Lauwaert, J.
 2008
 11 5-6 p. 360-363
4 p.
 artikel
18 Elemental specificity of ion cores and ionization entropy of vacancy-group-V-impurity atom pairs in Ge crystals: ACAR and DLTS data Arutyunov, N.Yu.
 2008
 11 5-6 p. 295-299
5 p.
 artikel
19 E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS Claeys, Cor
 2008
 11 5-6 p. 147-
1 p.
 artikel
20 Epitaxial anatase HfO2 on high-mobility substrate for ultra-scaled CMOS devices Debernardi, A.
 2008
 11 5-6 p. 241-244
4 p.
 artikel
21 Germanium on sapphire substrates for system on a chip Gamble, H.S.
 2008
 11 5-6 p. 195-198
4 p.
 artikel
22 High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density Poyai, A.
 2008
 11 5-6 p. 319-323
5 p.
 artikel
23 High-quality NiGe/Ge diodes for Schottky barrier MOSFETs Husain, M.K.
 2008
 11 5-6 p. 305-309
5 p.
 artikel
24 High-quality oxide formed by evaporation of SiO nanopowder: Application to MOSFETs on plastic substrates and GaN epilayers Nozaki, S.
 2008
 11 5-6 p. 384-389
6 p.
 artikel
25 Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams Afanas’ev, V.V.
 2008
 11 5-6 p. 230-235
6 p.
 artikel
26 Influence of the pre-treatment anneal on Co–germanide Schottky contacts Lajaunie, L.
 2008
 11 5-6 p. 300-304
5 p.
 artikel
27 Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition Cammilleri, V.D.
 2008
 11 5-6 p. 214-216
3 p.
 artikel
28 Local crystal structural modifications in pulsed laser deposited high-k dielectric thin films on silicon and germanium Alper Sahiner, Mehmet
 2008
 11 5-6 p. 245-249
5 p.
 artikel
29 Low power, GHz class ADC for broadband applications Tauqeer, T.
 2008
 11 5-6 p. 402-406
5 p.
 artikel
30 Material and process considerations for terahertz planar nanodevices Lu, X.F.
 2008
 11 5-6 p. 407-410
4 p.
 artikel
31 Metal implants-dependent carrier recombination characteristics in Ge Gaubas, E.
 2008
 11 5-6 p. 291-294
4 p.
 artikel
32 Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach Boudjelida, B.
 2008
 11 5-6 p. 398-401
4 p.
 artikel
33 Nanoscale electrical characterization of ultrathin high-k dielectric MOS stacks: A conducting AFM study Uppal, H.J.
 2008
 11 5-6 p. 250-253
4 p.
 artikel
34 Nanoscale strain characterisation for ultimate CMOS and beyond Olsen, Sarah H.
 2008
 11 5-6 p. 271-278
8 p.
 artikel
35 NANOSIL network of excellence—silicon-based nanostructures and nanodevices for long-term nanoelectronics applications Balestra, F.
 2008
 11 5-6 p. 148-159
12 p.
 artikel
36 Nonequilibrium aspects of armchair graphene nanoribbon conduction Deretzis, I.
 2008
 11 5-6 p. 190-194
5 p.
 artikel
37 No trace of divacancies at room temperature in germanium Kolkovsky, Vl.
 2008
 11 5-6 p. 336-339
4 p.
 artikel
38 Organic electronics: Materials, technology and circuit design developments enabling new applications de Leeuw, D.M.
 2008
 11 5-6 p. 199-204
6 p.
 artikel
39 Oxidation characteristics of Si0.85Ge0.15 nanowires Kim, Sang-Yeon
 2008
 11 5-6 p. 182-186
5 p.
 artikel
40 Radiation damage in proton-irradiated strained Si n-MOSFETs Hayama, K.
 2008
 11 5-6 p. 314-318
5 p.
 artikel
41 Radiation damage of Ge-on-Si devices Ohyama, H.
 2008
 11 5-6 p. 217-220
4 p.
 artikel
42 Raman spectroscopy determination of composition and strain in Si 1 - x Ge x / Si heterostructures Pezzoli, F.
 2008
 11 5-6 p. 279-284
6 p.
 artikel
43 Reliability assessment of SiO2/ZrO2 stack gate dielectric on strained-Si/Si0.8Ge0.2 heterolayers under dynamic and AC stress Bera, M.K.
 2008
 11 5-6 p. 254-258
5 p.
 artikel
44 Sensing pulsed light by means of Multi-Walled Carbon Nanotubes Ambrosio, A.
 2008
 11 5-6 p. 187-189
3 p.
 artikel
45 Shallow boron implantations in Ge and the role of the pre-amorphization depth Simoen, E.
 2008
 11 5-6 p. 368-371
4 p.
 artikel
46 Silicon nanodot-array device with multiple gates Jo, Mingyu
 2008
 11 5-6 p. 175-178
4 p.
 artikel
47 Simultaneous diffusion of Si and Ge in isotopically controlled Si 1 - x Ge x heterostructures Kube, R.
 2008
 11 5-6 p. 378-383
6 p.
 artikel
48 Stress analysis of Si1− x Ge x embedded source/drain junctions Bargallo Gonzalez, M.
 2008
 11 5-6 p. 285-290
6 p.
 artikel
49 Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures Hull, R.
 2008
 11 5-6 p. 160-168
9 p.
 artikel
50 TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography Lindner, Jörg K.N.
 2008
 11 5-6 p. 169-174
6 p.
 artikel
51 The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies? Vincent, B.
 2008
 11 5-6 p. 205-213
9 p.
 artikel
52 Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications Bouloukou, A.
 2008
 11 5-6 p. 390-393
4 p.
 artikel
53 XPS and IPE analysis of HfO2 band alignment with high-mobility semiconductors Perego, M.
 2008
 11 5-6 p. 221-225
5 p.
 artikel
                             53 gevonden resultaten
 
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