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                             175 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absolute calibration of the 15N(d, α0)13C and 15(p, α0)12C reaction cross sections Sawicki, J.A.
 1986
 15 1-6 p. 530-534
5 p.
 artikel
2 Absolute cross section for recoil detection of deuterium Besenbacher, F.
 1986
 15 1-6 p. 459-463
5 p.
 artikel
3 A computer program for the analysis of RBS spectra Wen-Zhi Li,
 1986
 15 1-6 p. 241-246
6 p.
 artikel
4 A computer study of the collisional mixing of Pt in Si Möller, W.
 1986
 15 1-6 p. 688-691
4 p.
 artikel
5 Adsorption position of light and heavy atoms on crystal surfaces determined with transmission channeling Stensgaard, I.
 1986
 15 1-6 p. 300-305
6 p.
 artikel
6 Amorphization of ion-implanted AlNi Thomé, L.
 1986
 15 1-6 p. 269-271
3 p.
 artikel
7 Analysis of carbon content and distribution in a-Si1−xCx:H films by resonant scattering Sie, S.H.
 1986
 15 1-6 p. 632-635
4 p.
 artikel
8 Analysis of copper alloys by proton beams Katsanos, A.A.
 1986
 15 1-6 p. 647-650
4 p.
 artikel
9 Analysis of helium-ion scattering with a desktop computer Butler, J.W.
 1986
 15 1-6 p. 232-237
6 p.
 artikel
10 Analysis of lithium using external proton beams Räisänen, J.
 1986
 15 1-6 p. 546-549
4 p.
 artikel
11 Analysis of near-surface tritium in materials by elastic recoil detection under MeV energy helium bombardment Sawicki, J.A.
 1986
 15 1-6 p. 475-480
6 p.
 artikel
12 An electrostatic “Russian” quadruplet microprobe lens Sie, S.H.
 1986
 15 1-6 p. 664-668
5 p.
 artikel
13 An investigation of films formed on stainless steel on immersion in hot chromic/sulphuric acid Earwaker, L.G.
 1986
 15 1-6 p. 367-371
5 p.
 artikel
14 An ion beam investigation of the preliminary stages of titanium indiffusion in lithium niobate waveguides Read, P.M.
 1986
 15 1-6 p. 398-403
6 p.
 artikel
15 Application of nuclear reaction analysis to the investigation of lithium loss in the surface of Al-Li alloys Schulte, R.L.
 1986
 15 1-6 p. 550-554
5 p.
 artikel
16 Application of the 16O(d, α)14N nuclear reaction to oxygen depth profiling in SIMOX structures Dubus, M.
 1986
 15 1-6 p. 559-562
4 p.
 artikel
17 Artefacts in RBS analysis of laser treated surfaces Kuldeep,
 1986
 15 1-6 p. 250-253
4 p.
 artikel
18 A semiautomatic algorithm for rutherford backscattering analysis Doolittle, Lawrence R.
 1986
 15 1-6 p. 227-231
5 p.
 artikel
19 A simple method to prepare carbon substrates for RBS analysis Hewett, C.A.
 1986
 15 1-6 p. 293-295
3 p.
 artikel
20 A SIMS-XPS study on silicon and germanium under O+ 2 bombardment Reuter, W.
 1986
 15 1-6 p. 173-175
3 p.
 artikel
21 Author index 1986
 15 1-6 p. 773-784
12 p.
 artikel
22 Background reduction in light element depth profiling by a coincidence technique Fink, D.
 1986
 15 1-6 p. 740-743
4 p.
 artikel
23 Backscattering analysis of ZrN alloys Duckworth, R.G.
 1986
 15 1-6 p. 272-274
3 p.
 artikel
24 Backscattering and ionoluminescence analysis of channeling effects in the scintillation response of garnet crystals to 4He+-ions Wist, W.
 1986
 15 1-6 p. 347-349
3 p.
 artikel
25 Beam induced compositional changes in rbs analysis of polymers Namavar, F.
 1986
 15 1-6 p. 285-287
3 p.
 artikel
26 Calibration of the Harwell series II Bi-implanted RBS standards Davies, J.A.
 1986
 15 1-6 p. 238-240
3 p.
 artikel
27 Calorimetric energy-dispersive detectors for ion beam analysis Andersen, Hans Henrik
 1986
 15 1-6 p. 722-728
7 p.
 artikel
28 Channeling analysis of self-implanted and recrystallized silicon on sapphire Renyong, Fan
 1986
 15 1-6 p. 350-351
2 p.
 artikel
29 Channeling analysis of strain in superlattices Picraux, S.T.
 1986
 15 1-6 p. 306-313
8 p.
 artikel
30 Channeling of B and As near the silicon 〈001〉 axis Hautala, Mikko
 1986
 15 1-6 p. 75-77
3 p.
 artikel
31 Characterisation of MeV neon damage in silicon Elliman, R.G.
 1986
 15 1-6 p. 439-442
4 p.
 artikel
32 Characterization of MBE grown SiGe superlattices by SIMS Frenzel, E.
 1986
 15 1-6 p. 183-185
3 p.
 artikel
33 Chemical enhancement effects in SIMS analysis Yu, Ming L.
 1986
 15 1-6 p. 151-158
8 p.
 artikel
34 Clustering and precipitation of indium atoms in quenched Al-In crystals Swanson, M.L.
 1986
 15 1-6 p. 413-417
5 p.
 artikel
35 Combined PIXE, RBS and NRA analysis of aerosol particulates Boni, C.
 1986
 15 1-6 p. 382-385
4 p.
 artikel
36 Combined RBS, PIXE and NRA examination of plutonium surface contamination on steel using the Harwell nuclear microprobe McMillan, J.W.
 1986
 15 1-6 p. 394-397
4 p.
 artikel
37 Committee 1986
 15 1-6 p. ix-
1 p.
 artikel
38 Comparison of theoretical and empirical interatomic potentials O'connor, D.J.
 1986
 15 1-6 p. 14-19
6 p.
 artikel
39 Computer simulation of helium-induced forward-recoil proton spectra for hydrogen concentration determinations Benenson, R.E.
 1986
 15 1-6 p. 453-458
6 p.
 artikel
40 Computer simulation programs for nuclear reaction analysis Simpson, J.C.B.
 1986
 15 1-6 p. 502-507
6 p.
 artikel
41 Conference photoghaphs 1986
 15 1-6 p. x-xi
nvt p.
 artikel
42 Considerations for application of Si(Li) detectors in analysis of sub-keV, ion-induced X-rays Musket, R.G.
 1986
 15 1-6 p. 735-739
5 p.
 artikel
43 Correlation between optical properties and nuclear damage profiles in ion implanted oxidized GaP crystals Kulik, Mirosz.xl;law
 1986
 15 1-6 p. 744-747
4 p.
 artikel
44 Cross sections for 170° backscattering of 4He from oxygen, aluminum and argon for 4He energies between 1.8 and 5.0 MeV Leavitt, J.A.
 1986
 15 1-6 p. 296-299
4 p.
 artikel
45 Defect analysis by dechanneling Gärtner, Konrad
 1986
 15 1-6 p. 317-321
5 p.
 artikel
46 Defect trapping of hydrogen in iron and steel measured by the 1H(15N, αγ)12C reaction Frech, G.
 1986
 15 1-6 p. 520-524
5 p.
 artikel
47 Depth distributions of low-energy 4He implanted in solids Gnaser, Hubert
 1986
 15 1-6 p. 49-53
5 p.
 artikel
48 Depth profiles of hydrogen and oxygen in hydrogenated amorphous silicon thin films Sie, S.H.
 1986
 15 1-6 p. 525-529
5 p.
 artikel
49 Depth resolution in SIMS: Experimental investigation of Ni and In in Cu Macht, M.-P.
 1986
 15 1-6 p. 189-192
4 p.
 artikel
50 Determination of local areal densities of heterogeneous biological samples by elastically backscattered protons in pixe microanalysis Themner, Klas
 1986
 15 1-6 p. 404-406
3 p.
 artikel
51 Diffusion and trapping of deuterium in stainless steels Scherzer, B.M.U.
 1986
 15 1-6 p. 375-381
7 p.
 artikel
52 Editorial Board 1986
 15 1-6 p. ii-iii
nvt p.
 artikel
53 Effective depth distribution of Ni on the jet graphite limiter Ehrenberg, J.
 1986
 15 1-6 p. 386-389
4 p.
 artikel
54 Electron and ion impact induced ion emission from KCl adsorbed on W (110) Koshikawa, T.
 1986
 15 1-6 p. 176-179
4 p.
 artikel
55 Energy dependence of the Z 1-range oscillation effect in silicon Fichtner, P.F.P.
 1986
 15 1-6 p. 58-60
3 p.
 artikel
56 Fluorine analysis in serpentinite rocks by proton induced gamma-ray emission Przybyłowicz, W.
 1986
 15 1-6 p. 573-575
3 p.
 artikel
57 Formation of radiative complex-centers by dual implantation of C+ and O+ ions into GaAs Makita, Yunosuke
 1986
 15 1-6 p. 765-769
5 p.
 artikel
58 Fractional secondary ion yields of Be, Zn, Cr and Si in InP, GaInAs and Ga1−xAlxAs Gauneau, M.
 1986
 15 1-6 p. 180-182
3 p.
 artikel
59 Fundamental aspects of ion beam mixing Averback, R.S.
 1986
 15 1-6 p. 675-687
13 p.
 artikel
60 Glancing angle X-ray diffraction investigations of subsurface damage in he-irradiated nickel Khanna, Rita
 1986
 15 1-6 p. 752-755
4 p.
 artikel
61 H−, H0, H+ He0, He+ and He2+ fractions of projectiles scattered from 14 different materials at 30 to 340 keV Ross, G.G.
 1986
 15 1-6 p. 146-150
5 p.
 artikel
62 High sensitivity hydrogen analysis using elastic recoil Wielunski, L
 1986
 15 1-6 p. 469-474
6 p.
 artikel
63 Hydration of soda-lime glasses studied by ion-induced nuclear reactions March, P.
 1986
 15 1-6 p. 516-519
4 p.
 artikel
64 Hydrogen and deuterium measurements by elastic recoil detection using alpha particles Pászti, F.
 1986
 15 1-6 p. 486-491
6 p.
 artikel
65 Hydrogen profiling by proton-proton scattering Willemsen, M.F.C.
 1986
 15 1-6 p. 492-494
3 p.
 artikel
66 Hydrogen uptake by palladium-implanted titanium studied by NRA and RBS Hoffmann, B.
 1986
 15 1-6 p. 361-366
6 p.
 artikel
67 Identification of diffusing species during metal silicide oxidation by Rutherford backscattering spectrometry Jiann-Ruey Chen,
 1986
 15 1-6 p. 280-284
5 p.
 artikel
68 Impact parameter dependence of the electronic stopping in proton-solid-state atomic collisions Nagy, I.
 1986
 15 1-6 p. 8-10
3 p.
 artikel
69 Implantation and thermal annealing behaviour of Bi implanted into Al/Ti and Al/V bilayer structures Behar, M.
 1986
 15 1-6 p. 78-80
3 p.
 artikel
70 Implantation induced CuSn alloys analyzed by RBS Henriksen, O.
 1986
 15 1-6 p. 254-259
6 p.
 artikel
71 Implantation profiles of Li in metals Tjan, K.
 1986
 15 1-6 p. 54-57
4 p.
 artikel
72 Importance of projectile inner-shell vacancies in X-ray analysis using MeV Ar beams Heitz, Ch.
 1986
 15 1-6 p. 598-601
4 p.
 artikel
73 Improved nuclear reaction analysis for solid state research by automatic energy scanning Zinke-Allmang, M.
 1986
 15 1-6 p. 563-568
6 p.
 artikel
74 Improvement in depth resolution of medium-mass element analysis: Application to biocompatible glasses Mea, G.Della
 1986
 15 1-6 p. 495-501
7 p.
 artikel
75 Incorporation of phosphorus and boron in amorphous silicon measured with (p, γ) resonant reactions Pruppers, M.J.M.
 1986
 15 1-6 p. 512-515
4 p.
 artikel
76 Inelastic energy losses in cascades and atom ejection Harrison Jr., Don E.
 1986
 15 1-6 p. 25-28
4 p.
 artikel
77 Influence of recoil transport on energy-loss and damage profiles Posselt, M.
 1986
 15 1-6 p. 20-24
5 p.
 artikel
78 Initial growth of nickel on copper (100) studied by ion-scattering Alkemade, P.F.A.
 1986
 15 1-6 p. 126-129
4 p.
 artikel
79 In SITU implantation and SIMS analysis of D in Si and NbV using an ion microprobe Loxton, C.M.
 1986
 15 1-6 p. 210-213
4 p.
 artikel
80 Interaction of interstitials with indium-vacancy complexes in nickel studied by means of perturbed angular correlation and channeling measurements Vos, M.
 1986
 15 1-6 p. 333-336
4 p.
 artikel
81 Interactions of low-energy He+, He0, and He∗ with solid surfaces Souda, R.
 1986
 15 1-6 p. 114-121
8 p.
 artikel
82 Intermetallic compound formation of Ge-Ni and Ge-Al-Ni systems by furnace annealing and ion beam intermixing Jároli, E.
 1986
 15 1-6 p. 703-706
4 p.
 artikel
83 Internal oxidation of Sb-implanted silver single crystals Segeth, W.
 1986
 15 1-6 p. 625-628
4 p.
 artikel
84 Investigation of particle elastic scattering analysis as a complementary technique to pixe for aerosol characterization Martinsson, Bengt G.
 1986
 15 1-6 p. 636-642
7 p.
 artikel
85 Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry Fried, M.
 1986
 15 1-6 p. 422-424
3 p.
 artikel
86 Ion beam analysis studies of desert varnish Duerden, P.
 1986
 15 1-6 p. 643-646
4 p.
 artikel
87 Ion beam mixing of copper-gold multilayers Rauschenbach, B.
 1986
 15 1-6 p. 692-697
6 p.
 artikel
88 Ion beam mixing studies in the Sn-Si system Prasad, K.G.
 1986
 15 1-6 p. 698-702
5 p.
 artikel
89 Ion implantation in highly oriented pyrolytic graphite Schroyen, D.
 1986
 15 1-6 p. 341-343
3 p.
 artikel
90 Ion scattering spectroscopy in the impact collision mode (ICISS): Surface structure information from noble gas and alkali-ion scattering Niehus, Horst
 1986
 15 1-6 p. 122-125
4 p.
 artikel
91 Isotrace radiocarbon analysis — equipment and procedures Kieser, W.E.
 1986
 15 1-6 p. 718-721
4 p.
 artikel
92 Iterative subtraction of backscattering spectra in determining the depth profile of arsenic implanted in niobium films Wang Dachun,
 1986
 15 1-6 p. 265-268
4 p.
 artikel
93 Laser fluorescence studies of neutral particles sputtered from Cr, Cr2O3 and Cr3C2 targets Husinsky, W.
 1986
 15 1-6 p. 165-168
4 p.
 artikel
94 Lattice damage in single crystals of Cu after self-implantation studied by channeling Vos, M.
 1986
 15 1-6 p. 337-340
4 p.
 artikel
95 Lattice localization of Ta in Si by planar channeling Jousten, K.
 1986
 15 1-6 p. 322-327
6 p.
 artikel
96 Lattice location of Tl and diffusion studies of Tl and Hf implanted in magnesium Da Silva, M.R.
 1986
 15 1-6 p. 344-346
3 p.
 artikel
97 Light elements depth-profiling using time-of-flight and energy detection of recoils Thomas, J.P.
 1986
 15 1-6 p. 443-452
10 p.
 artikel
98 Limits of detection for impurities in uranium-rich matrices by ion-induced nuclear analysis Erasmus, C.S.
 1986
 15 1-6 p. 569-572
4 p.
 artikel
99 Long range tails of damage and implantation profiles in gold and copper Ecker, K.H.
 1986
 15 1-6 p. 66-70
5 p.
 artikel
100 Low energy ion scattering as a probe of neon radiation damage in nickel Donnelly, S.E.
 1986
 15 1-6 p. 130-133
4 p.
 artikel
101 L-shell ionisation of some heavy elements by proton and helium ion impact Braziewicz, J.
 1986
 15 1-6 p. 585-587
3 p.
 artikel
102 L shell line intensities for light ion induced X-ray emission Cohen, D.D.
 1986
 15 1-6 p. 576-580
5 p.
 artikel
103 L-shell X-ray production cross sections for PIXE analysis of elements from Ag to U Jesus, A.P.
 1986
 15 1-6 p. 595-597
3 p.
 artikel
104 L1-subshell fluorescence yield and coster-kronig transition probabilities near Z = 50 Rosato, E.
 1986
 15 1-6 p. 591-594
4 p.
 artikel
105 L-subshell ionisation for 4He ion bombardment of tellurium Cuzzocrea, P.
 1986
 15 1-6 p. 588-590
3 p.
 artikel
106 1–3 MeV alpha and triton stopping powers in LiF and Li alloys Biersack, J.P.
 1986
 15 1-6 p. 96-100
5 p.
 artikel
107 MeV proton backscattering analysis of ion implanted polymers Calcagno, L.
 1986
 15 1-6 p. 288-292
5 p.
 artikel
108 Microbeam analysis of microelectronic circuits Morris, W.G.
 1986
 15 1-6 p. 661-663
3 p.
 artikel
109 Microbeam imaging at micron and submicron resolution Legge, G.J.F.
 1986
 15 1-6 p. 669-674
6 p.
 artikel
110 Mixing and chemical effects in SIMS depth profiling the Si/SiO2 interface Anderle, M.
 1986
 15 1-6 p. 186-188
3 p.
 artikel
111 Model investigations of the oxidation of silicon by high dose implantation Jäger, H.U.
 1986
 15 1-6 p. 748-751
4 p.
 artikel
112 Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation Hecking, N.
 1986
 15 1-6 p. 760-764
5 p.
 artikel
113 Mössbauer and nuclear reaction spectroscopy study of XC06 and 100C6 nitrogen implanted steels at various temperatures Moncoffre, N.
 1986
 15 1-6 p. 620-624
5 p.
 artikel
114 Mössbauer and RBS study of thermally annealed Te-implanted GaAs Schroyen, D.
 1986
 15 1-6 p. 410-412
3 p.
 artikel
115 Multidimensional ion microbeam analysis Doyle, B.L.
 1986
 15 1-6 p. 654-660
7 p.
 artikel
116 Nonlinear calculations of the energy loss of slow ions in an electron gas Ashley, J.C.
 1986
 15 1-6 p. 11-13
3 p.
 artikel
117 Observability of coherent effects in the characteristic X-ray radiation induced by channeled charged particles Šmit, Ž.
 1986
 15 1-6 p. 602-604
3 p.
 artikel
118 Oxidation behaviour of GdSi2 studied by RBS Suu, H.V.
 1986
 15 1-6 p. 247-249
3 p.
 artikel
119 Oxygen coverage dependent emission of sputtered neutrals and secondary ions Gnaser, H.
 1986
 15 1-6 p. 169-172
4 p.
 artikel
120 Oxygen induced broadening effects studied by RBS and SIMS Vandervorst, W.
 1986
 15 1-6 p. 201-205
5 p.
 artikel
121 Oxygen-induced segregation effects in sputter depth-profiling Hues, Steven M.
 1986
 15 1-6 p. 206-209
4 p.
 artikel
122 Perturbed angular correlation and Rutherford backscattering studies in indium implanted silicon Deicher, M.
 1986
 15 1-6 p. 418-421
4 p.
 artikel
123 PIXE analysis of heavy metals in water at sub-ppb levels Cecchi, R.
 1986
 15 1-6 p. 605-607
3 p.
 artikel
124 Plastic foils as primary hydrogen standards for nuclear reaction analysis Rudolph, W.
 1986
 15 1-6 p. 508-511
4 p.
 artikel
125 Precipitation of Kr after implantation into Al Birtcher, R.C.
 1986
 15 1-6 p. 435-438
4 p.
 artikel
126 Preface Biersack, J.P.
 1986
 15 1-6 p. vii-viii
nvt p.
 artikel
127 Proton energy loss spectroscopy for surface layer analysis in the monolayer regime Oku, Tomoki
 1986
 15 1-6 p. 142-145
4 p.
 artikel
128 Proton-induced X-ray and gamma ray emission analysis of biological samples Hall, Gene S.
 1986
 15 1-6 p. 629-631
3 p.
 artikel
129 Proton stopping powers in Al, Ni, Cu, Ag and Au measured comparatively on identical targets in backscattering and transmission geometry Mertens, P.
 1986
 15 1-6 p. 91-95
5 p.
 artikel
130 Quantitative analysis using sputtered neutrals in a secondary ion microanalyser Williams, Peter
 1986
 15 1-6 p. 159-164
6 p.
 artikel
131 Range phenomena of low energy ions in solids Izsak, K.
 1986
 15 1-6 p. 34-41
8 p.
 artikel
132 Range profiles of ions in double-layer structures Fink, D.
 1986
 15 1-6 p. 71-74
4 p.
 artikel
133 Range profiles of xenon in aluminum and silicon Jorch, H.H.
 1986
 15 1-6 p. 47-48
2 p.
 artikel
134 Ranges and electronic stopping powers of 1–24 MeV 12C and 14N ions in Si targets from optical reflectivity measurements on bevelled samples Bussmann, U.
 1986
 15 1-6 p. 105-108
4 p.
 artikel
135 Ranges of 0.7–2.1 keV hydrogen ions in Be, C and Si Ross, G.G.
 1986
 15 1-6 p. 61-65
5 p.
 artikel
136 Rapid analysis of sipos films by elastic backscattering and RBS Jeynes, C.
 1986
 15 1-6 p. 275-279
5 p.
 artikel
137 RBS and nuclear reaction analysis of boron implanted copper Henriksen, O.
 1986
 15 1-6 p. 356-360
5 p.
 artikel
138 RBS and optical investigations of defects in weakly damaged GaAs Wesch, W.
 1986
 15 1-6 p. 431-434
4 p.
 artikel
139 Reference proton stopping cross sections for five elements around the maximum Semrad, D.
 1986
 15 1-6 p. 86-90
5 p.
 artikel
140 Relative X-ray cross sections and sensitivity of PIXE and RBS in surface analysis Bergsaker, H.
 1986
 15 1-6 p. 407-409
3 p.
 artikel
141 Role of coulomb deflection in light ion induced L shell ionization Harrigan, M.
 1986
 15 1-6 p. 581-584
4 p.
 artikel
142 Rutherford backscattering analysis of gaAs-oxide interface Person, P.
 1986
 15 1-6 p. 425-430
6 p.
 artikel
143 Rutherford backscattering and transmission electron microscopy analysis of Al/AlxOy vacuum-deposited laminates Hardwick, D.A.
 1986
 15 1-6 p. 260-264
5 p.
 artikel
144 Separate determination of concentration profiles for atoms with different masses by simultaneous measurement of scattered projectile and recoil energies Klein, S.S.
 1986
 15 1-6 p. 464-468
5 p.
 artikel
145 Short-term sampling and pixe analysis of aerosol particulates collected at two different sites in the munich area Hietel, B.
 1986
 15 1-6 p. 608-611
4 p.
 artikel
146 Silicon surface barrier detector resolution in the 2–30 MeV range Östling, M.
 1986
 15 1-6 p. 729-734
6 p.
 artikel
147 SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N Kilner, J.A.
 1986
 15 1-6 p. 214-217
4 p.
 artikel
148 SIMS analysis of thermal and ion-beam induced broadening of thin metal markers in silicon Tonn, D.G.
 1986
 15 1-6 p. 193-197
5 p.
 artikel
149 Simultaneous direct recoil and SIMS analysis analysis of H, C, and O on Si(100) Schultz, J.Albert
 1986
 15 1-6 p. 134-137
4 p.
 artikel
150 Soft X-rays from neon implanted in aluminium under MeV helium bombardment Lefebvre, A.
 1986
 15 1-6 p. 616-619
4 p.
 artikel
151 Some aspects of the use of SIMS for investigations on iron metabolism based upon the application of isotopically enriched tracers Wittmaack, K.
 1986
 15 1-6 p. 222-225
4 p.
 artikel
152 Some characteristics of the 18O(p, α0)15N reaction Cohen, D.D.
 1986
 15 1-6 p. 555-558
4 p.
 artikel
153 Sputtering of a cesium-covered copper crystal: A computer simulation Coudray, Christiane
 1986
 15 1-6 p. 29-33
5 p.
 artikel
154 Sputtering of ices by keV ions Christiansen, J.W.
 1986
 15 1-6 p. 218-221
4 p.
 artikel
155 Stopping cross sections of He+ ions in the metallic glass Fe82B18 Kuldeep,
 1986
 15 1-6 p. 101-104
4 p.
 artikel
156 Strain measurements in EuS/SrS magnetic superlattices by ion channeling Mantl, S.
 1986
 15 1-6 p. 314-316
3 p.
 artikel
157 Study of radiation damage in an ion implanted rare-earth iron garnet crystal Battistig, G.
 1986
 15 1-6 p. 372-374
3 p.
 artikel
158 Surface recombination of deuterium implanted into SS304 Børgesen, P.
 1986
 15 1-6 p. 540-545
6 p.
 artikel
159 Temperature dependence of profile tailing and segregation in SIMS analysis of As in Si and SiO2 with oxygen primary ions Schulte, F.
 1986
 15 1-6 p. 198-200
3 p.
 artikel
160 Temperature influence during high-fluence nitrogen ion implantation into iron Rauschenbach, B.
 1986
 15 1-6 p. 756-759
4 p.
 artikel
161 The analytical ion accelerator: RBS instrumentation from a surface analyst's perspective Magee, Charles W.
 1986
 15 1-6 p. 707-711
5 p.
 artikel
162 The computer simulation of ion induced atomic collision cascades Webb, Roger P.
 1986
 15 1-6 p. 1-7
7 p.
 artikel
163 The effect of redistribution of defects in overlapping cascades in irradiated metals Abromeit, C.
 1986
 15 1-6 p. 770-772
3 p.
 artikel
164 Thermal relaxation behaviour of As in supersaturated Si studied by channeling, Hall effect measurements and transmission electron microscopy Wang, Yusheng
 1986
 15 1-6 p. 352-355
4 p.
 artikel
165 Thick target X-ray yields and intensity ratios for MeV Br and Kr ion impact and application to the analysis of pottery Tenorio, D.
 1986
 15 1-6 p. 612-615
4 p.
 artikel
166 Trajectory-dependent neutralization probability of low-energy He + scattered from solid surfaces Souda, R.
 1986
 15 1-6 p. 138-141
4 p.
 artikel
167 Tritium profiling using the T(d, 4He)n reaction Caterini, M.
 1986
 15 1-6 p. 535-539
5 p.
 artikel
168 UHV equipment for in situ studies of hydrogen interaction with materials based on NRA Fallavier, M.
 1986
 15 1-6 p. 712-717
6 p.
 artikel
169 Universal expressions for average projected range and average damage depth in ion-implanted substrates Kido, Y.
 1986
 15 1-6 p. 42-46
5 p.
 artikel
170 Use of a magnetic spectrometer to profile light elements by elastic recoil detection Gossett, C.R.
 1986
 15 1-6 p. 481-485
5 p.
 artikel
171 Use of channeling in association with charged particle activation to study the position of light elements at trace level in crystals: The case of carbon in GaAlAs prepared by MO-VPE Misdaq, M.A.
 1986
 15 1-6 p. 328-332
5 p.
 artikel
172 Use of superlattices to determine bulk and interface stoichiometry of very thin films Lanford, W.A.
 1986
 15 1-6 p. 390-393
4 p.
 artikel
173 Variability in pottery analysis Bird, J.R.
 1986
 15 1-6 p. 651-653
3 p.
 artikel
174 Z 2-oscillation systematics in the stopping of fission fragments Dickstein, P.
 1986
 15 1-6 p. 109-113
5 p.
 artikel
175 Z 1 stopping power oscillation in the nuclear stopping regime as obtained by time-of-flight spectroscopy of heavy ions in hydrogen Geyer, E.
 1986
 15 1-6 p. 81-85
5 p.
 artikel
                             175 gevonden resultaten
 
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