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                             124 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparative study of deep levels created by low dose implantation of hydrogen, oxygen and silicon into MOCVD grown n-GaAs Tan, H.H
 1995
 106 1-4 p. 313-317
5 p.
 artikel
2 A mevva ion source for simultaneous implantation of gas and metal ions Wolf, B.H.
 1995
 106 1-4 p. 651-656
6 p.
 artikel
3 Amorphization of silicon by elevated temperature ion irradiation Goldberg, R.D.
 1995
 106 1-4 p. 242-247
6 p.
 artikel
4 An investigation of dopant gases in plasma immersion ion implantation Qin, Shu
 1995
 106 1-4 p. 636-640
5 p.
 artikel
5 Atomic mixing induced in metallic bilayers by high electronic excitations Leguay, R.
 1995
 106 1-4 p. 28-33
6 p.
 artikel
6 Author index 1995
 106 1-4 p. 671-682
12 p.
 artikel
7 Bandgap tuning of semiconductor Quantum Well laser structures using high energy ion implantation Charbonneau, S.
 1995
 106 1-4 p. 457-460
4 p.
 artikel
8 Boronizing of steel by outward transport of Fe atoms during dynamic ion mixing Yasunaga, Tatsuya
 1995
 106 1-4 p. 527-531
5 p.
 artikel
9 C60 film growth and the interaction of fullerenes with bare and H terminated Si surfaces, studied by molecular dynamics Beardmore, Keith
 1995
 106 1-4 p. 74-79
6 p.
 artikel
10 Channel waveguides formed by germanium implantation in fused silica Leech, P.W.
 1995
 106 1-4 p. 442-446
5 p.
 artikel
11 Characterization of cubic boron nitride films grown by mass separated ion beam deposition Hofsäss, H.
 1995
 106 1-4 p. 153-158
6 p.
 artikel
12 Characterization of Si(100) sputtered with low energy argon Huang, L.J.
 1995
 106 1-4 p. 34-37
4 p.
 artikel
13 Chemical and electrical properties of cavities in silicon and germanium Myers, S.M.
 1995
 106 1-4 p. 379-385
7 p.
 artikel
14 Committees 1995
 106 1-4 p. ix-
1 p.
 artikel
15 Compound formation by ion beam synthesis and a comparison with alternative methods such as deposition and growth or wafer bonding Mantl, Siegfried
 1995
 106 1-4 p. 355-363
9 p.
 artikel
16 Considerations on effect of local temperature on primary defect production Gyulai, J.
 1995
 106 1-4 p. 328-332
5 p.
 artikel
17 Conversion of insulating thin films of MgIn2O4 into transparent conductors by ion implantation Hosono, H.
 1995
 106 1-4 p. 517-521
5 p.
 artikel
18 Correlation of size and photoluminescence for Ge nanocrystals in SiO2 matrices Yang, C.M.
 1995
 106 1-4 p. 433-437
5 p.
 artikel
19 Corrosion behavior of nitrogen implanted aluminum Walter, K.C.
 1995
 106 1-4 p. 522-526
5 p.
 artikel
20 Creep of a crystalline metallic layer induced by GeV heavy ion irradiation Benyagoub, A.
 1995
 106 1-4 p. 500-503
4 p.
 artikel
21 Cross-sectional Raman microscopy of MeV implanted diamond Jamieson, D.N.
 1995
 106 1-4 p. 641-645
5 p.
 artikel
22 Damage of M-type baryum hexaferrites induced by GeV-heavy ion irradiations Costantini, J.M.
 1995
 106 1-4 p. 567-572
6 p.
 artikel
23 Defect production by MeV cluster impacts Döbeli, M.
 1995
 106 1-4 p. 43-46
4 p.
 artikel
24 Diffusion and trapping of Au to cavities induced by H-implantation in Si Wong-Leung, J.
 1995
 106 1-4 p. 424-428
5 p.
 artikel
25 Dislocation structure in coarse-grained copper after ion implantation Sharkeev, Yu.P.
 1995
 106 1-4 p. 532-537
6 p.
 artikel
26 Disordering and defect production in silicon by keV ion irradiation studied by molecular dynamics Caturla, M.J.
 1995
 106 1-4 p. 1-8
8 p.
 artikel
27 ECR plasma-assisted deposition of Al2O3 and dispersion-strengthened AlO x Barbour, J.C.
 1995
 106 1-4 p. 84-89
6 p.
 artikel
28 Editorial Williams, Jim
 1995
 106 1-4 p. vii-viii
nvt p.
 artikel
29 Editorial Board 1995
 106 1-4 p. ii-iii
nvt p.
 artikel
30 Effect of Ge-related mechanical strain on defect and impurity behaviour in ion-implanted silicon Suprun-Belevich, Yu.
 1995
 106 1-4 p. 262-266
5 p.
 artikel
31 Electrical, optical and materials properties of ion beam synthesised (IBS) FeSi2 Reeson, K.J.
 1995
 106 1-4 p. 364-371
8 p.
 artikel
32 Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs Auret, F.D.
 1995
 106 1-4 p. 323-327
5 p.
 artikel
33 Electronic stopping power of 〈100〉 axial-channelled He ions in Si crystals dos Santos, J.H.R.
 1995
 106 1-4 p. 51-54
4 p.
 artikel
34 Elevated temperature Ge implantation into Si and the effect of subsequent thermal annealing Wong, W.C.
 1995
 106 1-4 p. 271-276
6 p.
 artikel
35 α-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals De Wachter, J.
 1995
 106 1-4 p. 23-27
5 p.
 artikel
36 Germanium implantation into amorphous silicon films Ershov, Alexey V.
 1995
 106 1-4 p. 257-261
5 p.
 artikel
37 Graphitization of diamond by ion impact: Fundamentals and applications Kalish, R.
 1995
 106 1-4 p. 492-499
8 p.
 artikel
38 Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy Iida, Tsutomu
 1995
 106 1-4 p. 133-136
4 p.
 artikel
39 High-dose implantation of Pt ions into Ni using the sacrificial layer technique: A comparison of Al and Al2O3 sacrificial layers Duffy, A.G.
 1995
 106 1-4 p. 504-510
7 p.
 artikel
40 High-dose oxygen ion implanted heterointerfaces in silicon Ashok, S.
 1995
 106 1-4 p. 372-378
7 p.
 artikel
41 High pressure phases produced by low energy ion implantation with reference to cubic boron nitride McKenzie, D.R.
 1995
 106 1-4 p. 90-95
6 p.
 artikel
42 Hyperfine interaction study of the decoration of the internal wall of nanosized voids by impurity probes Deweerd, Wim
 1995
 106 1-4 p. 252-256
5 p.
 artikel
43 Implantation-induced defects in high-dose O-implanted Si Ellingboe, S.L.
 1995
 106 1-4 p. 409-414
6 p.
 artikel
44 Implantation isolation in n-type InP bombarded with He+ and B+ Sargunas, V.
 1995
 106 1-4 p. 294-297
4 p.
 artikel
45 Implantation of Ti and N into soda lime glass to minimize solar load and reflectivity Was, Gary S.
 1995
 106 1-4 p. 560-566
7 p.
 artikel
46 Implant damage and transient enhanced diffusion in Si Eaglesham, D.J.
 1995
 106 1-4 p. 191-197
7 p.
 artikel
47 Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon Rimini, E.
 1995
 106 1-4 p. 419-423
5 p.
 artikel
48 Incorporation and stability of erbium in sapphire by ion implantation Alves, E.
 1995
 106 1-4 p. 429-432
4 p.
 artikel
49 Industrial application of ion assisted surface modification Kohlhof, K.
 1995
 106 1-4 p. 662-669
8 p.
 artikel
50 Influence of nuclear energy deposition density on the ion-beam mixing of metallic bilayers Thomé, L.
 1995
 106 1-4 p. 65-67
3 p.
 artikel
51 In situ ion-beam analysis and modification of sol-gel zirconia thin films Levine, T.E.
 1995
 106 1-4 p. 597-601
5 p.
 artikel
52 Internal stresses in nickel films prepared by ion beam and vapor deposition Kuratani, Naoto
 1995
 106 1-4 p. 116-119
4 p.
 artikel
53 Investigation of radiation damage in ion implanted and annealed SiC layers Wesch, W.
 1995
 106 1-4 p. 339-345
7 p.
 artikel
54 Ion beam assisted deposition in the synthesis and fracture of metal-ceramic microlaminates Was, G.S.
 1995
 106 1-4 p. 147-152
6 p.
 artikel
55 Ion beam assisted deposition of ZrO2 thin films Neubeck, K
 1995
 106 1-4 p. 110-115
6 p.
 artikel
56 Ion-beam-induced epitaxial crystallisation of metastable Si1−x−y Ge xCy layers fabricated by Ge and C ion implantation Kobayashi, Naoto
 1995
 106 1-4 p. 289-293
5 p.
 artikel
57 Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium Bachmann, T.
 1995
 106 1-4 p. 350-354
5 p.
 artikel
58 Ion beam induced epitaxial recrystallization of alumina thin films deposited on sapphire Yu, Ning
 1995
 106 1-4 p. 579-582
4 p.
 artikel
59 Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation Glaser, E.
 1995
 106 1-4 p. 281-288
8 p.
 artikel
60 Ion beam-induced interfacial growth in Si and silicides Fortuna, F.
 1995
 106 1-4 p. 206-215
10 p.
 artikel
61 Ion-beam induced sequential epitaxy of α, β and γ-FeSi2 in Si (100) at 320°C Maltez, R.L.
 1995
 106 1-4 p. 400-403
4 p.
 artikel
62 Ion beam mixing and radiation enhanced diffusion in metal/ceramic interfaces Neubeck, K.
 1995
 106 1-4 p. 589-596
8 p.
 artikel
63 Ion beam modification of metal-polymer interfaces for improved adhesion Ratchev, Boris A.
 1995
 106 1-4 p. 68-73
6 p.
 artikel
64 Ion beam promoted lithium absorption in glassy polymeric carbon Zimmerman, R.L.
 1995
 106 1-4 p. 550-554
5 p.
 artikel
65 Ion beam synthesis of planar opto-electronic devices Polman, A.
 1995
 106 1-4 p. 393-399
7 p.
 artikel
66 Ion bombardment into inner wall surfaces of tubes and their biomedical applications Iwaki, M.
 1995
 106 1-4 p. 618-623
6 p.
 artikel
67 Ion implantation damage of InP and InGaAs Akano, U.G.
 1995
 106 1-4 p. 308-312
5 p.
 artikel
68 Ion implantation induced compositional intermixing in the InGaAs InP MQW system for wavelength shifted waveguides Wan, J.Z.
 1995
 106 1-4 p. 461-465
5 p.
 artikel
69 Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallization Konomura, A.
 1995
 106 1-4 p. 277-280
4 p.
 artikel
70 Ions as a useful tool for carbon film deposition and modification Ullmann, J.
 1995
 106 1-4 p. 96-105
10 p.
 artikel
71 Local material removal by focused ion beam milling and etching Lipp, S.
 1995
 106 1-4 p. 630-635
6 p.
 artikel
72 Materials issues and device performances for light emitting Er-implanted Si Coffa, S.
 1995
 106 1-4 p. 386-392
7 p.
 artikel
73 Metastable alloys synthesised by ion mixing and thermodynamic and kinetic modelling Liu, B.X.
 1995
 106 1-4 p. 17-22
6 p.
 artikel
74 MEVVA ion-implantation of high T c superconductors Martin, J.W.
 1995
 106 1-4 p. 624-629
6 p.
 artikel
75 Model for the electronic stopping of channeled ions in silicon around the stopping power maximum Simionescu, A.
 1995
 106 1-4 p. 47-50
4 p.
 artikel
76 Molecular dynamics and experimental studies of preferred orientation induced by compressive stress McCulloch, D.G.
 1995
 106 1-4 p. 545-549
5 p.
 artikel
77 Ne+, Ar+ and Xe+ ion bombardment induced and suppressed topography on Si Vishnyakov, V.
 1995
 106 1-4 p. 174-178
5 p.
 artikel
78 Novel beam effect: mass transport due to the lateral component of the ion momentum Roorda, S.
 1995
 106 1-4 p. 80-83
4 p.
 artikel
79 Novel optical features in Cd+ ion-implanted LEC-grown GaAs Kawasumi, Yoko
 1995
 106 1-4 p. 466-470
5 p.
 artikel
80 On the high temperature oxidation of polycrystalline and single crystal nickel after ion implantation Rao, Z.
 1995
 106 1-4 p. 538-544
7 p.
 artikel
81 On the mechanism of crystal growth orientation of ion beam assisted deposited thin films Ensinger, W.
 1995
 106 1-4 p. 142-146
5 p.
 artikel
82 Optical activation of Er3+ in silicon co-implanted with carbon Uekusa, S.
 1995
 106 1-4 p. 477-479
3 p.
 artikel
83 Optical characterization of doped top layers in SOI structures formed by ion implantation Yuehui, Yu
 1995
 106 1-4 p. 452-456
5 p.
 artikel
84 Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers Hofsäß, V
 1995
 106 1-4 p. 471-476
6 p.
 artikel
85 Photorefractive waveguides produced by ion-implantation of fused silica Verhaegen, M.
 1995
 106 1-4 p. 438-441
4 p.
 artikel
86 PN junction formation in 6HSiC by acceptor implantation into n-type substrate Rao, Mulpuri V.
 1995
 106 1-4 p. 333-338
6 p.
 artikel
87 Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopy Svensson, B.G.
 1995
 106 1-4 p. 183-190
8 p.
 artikel
88 Production of buried waveguides in PMMA by high energy ion implantation Rück, D.M.
 1995
 106 1-4 p. 447-451
5 p.
 artikel
89 Radiation damage and conductivity changes in ion implanted diamond Yang, Q.
 1995
 106 1-4 p. 555-559
5 p.
 artikel
90 Radiation damage features on mica and L-valine probed by scanning force microscopy Barlo Daya, D.D.N.
 1995
 106 1-4 p. 38-42
5 p.
 artikel
91 Recrystallisation of relaxed SiGe alloy layers Kringhøj, P.
 1995
 106 1-4 p. 346-349
4 p.
 artikel
92 Retention of nitrogen implanted into metals Miyagawa, Y.
 1995
 106 1-4 p. 170-173
4 p.
 artikel
93 Role of defects during amorphization and relaxation processes in Si Motooka, T.
 1995
 106 1-4 p. 198-205
8 p.
 artikel
94 Secondary defect formation in self-ion irradiated silicon Goldberg, R.D.
 1995
 106 1-4 p. 216-221
6 p.
 artikel
95 Silicon carbide and oxide deposition using low energy (5–100 eV) beams of C+, O+, and CO+ ions Kim, B.C.
 1995
 106 1-4 p. 137-141
5 p.
 artikel
96 Silicon implant annealing kinetics in GaAs Gwilliam, R.
 1995
 106 1-4 p. 318-322
5 p.
 artikel
97 Silicon implanted with MeV 12C ions; temperature dependence of defect formation at low doses Lalita, J.
 1995
 106 1-4 p. 237-241
5 p.
 artikel
98 Silicon on an insulator produced by helium implantation and oxidation Raineri, Vito
 1995
 106 1-4 p. 415-418
4 p.
 artikel
99 Simultaneous mass-analyzed positive and negative low-energy ion beam deposition apparatus Horino, Yuji
 1995
 106 1-4 p. 657-661
5 p.
 artikel
100 Sponsors 1995
 106 1-4 p. x-
1 p.
 artikel
101 Sputtering of Cu thin films on Ru(0001) by Ne+ ion bombardment Shen, Y.G.
 1995
 106 1-4 p. 55-59
5 p.
 artikel
102 Structure, morphology and melting hysteresis of ion-implanted nanocrystals Andersen, Hans Henrik
 1995
 106 1-4 p. 480-491
12 p.
 artikel
103 Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon Jones, K.S.
 1995
 106 1-4 p. 227-232
6 p.
 artikel
104 Surface modifications by gas cluster ion beams Yamada, I.
 1995
 106 1-4 p. 165-169
5 p.
 artikel
105 Surface treatment by low energy metal ion irradiation Weber, T.
 1995
 106 1-4 p. 159-164
6 p.
 artikel
106 Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition Baba, K.
 1995
 106 1-4 p. 106-109
4 p.
 artikel
107 Synthesis of epitaxial Sn x Ge1−x alloy films by ion-assisted molecular beam epitaxy He, Gang
 1995
 106 1-4 p. 126-132
7 p.
 artikel
108 Synthesis of (Ti, Al)N films by ion beam assisted deposition Setsuhara, Y.
 1995
 106 1-4 p. 120-125
6 p.
 artikel
109 Synthesis of unattainable ion implantation profiles — ‘Pseudo-implantation’ Brown, I.G.
 1995
 106 1-4 p. 646-650
5 p.
 artikel
110 Systematic study of the ion beam mixing of oxide markers into alumina Cooper, Elizabeth A.
 1995
 106 1-4 p. 9-16
8 p.
 artikel
111 Temperature and dose dependence of damage production in Si+ and Se+ implanted InP Wendler, E.
 1995
 106 1-4 p. 303-307
5 p.
 artikel
112 The effect of a post-treatment of amorphous carbon films with high energy ion beams Kolitsch, A.
 1995
 106 1-4 p. 511-516
6 p.
 artikel
113 The effect of dense and dilute collision cascades on helium bubbles in metals Donnelly, S.E.
 1995
 106 1-4 p. 583-588
6 p.
 artikel
114 The formation and thermal stability of ion-beam-synthesized ternary Me x Fe1−x Si2 (Me=Co, Ni) in Si(111) Vantomme, A.
 1995
 106 1-4 p. 404-408
5 p.
 artikel
115 The irradiation damage response of MgO · 3Al2O3 spinel single crystal under high-fluence ion-irradiation Sickafus, Kurt E.
 1995
 106 1-4 p. 573-578
6 p.
 artikel
116 The residual electrically active damage in ion implanted Si Kringhøj, P.
 1995
 106 1-4 p. 248-251
4 p.
 artikel
117 The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing Marques, J.G.
 1995
 106 1-4 p. 602-605
4 p.
 artikel
118 The temperature dependence of ion-beam-induced amorphization in β-SiC Weber, W.J.
 1995
 106 1-4 p. 298-302
5 p.
 artikel
119 The use of low energy, ion induced nuclear reactions for proton radiotherapy applications Horn, K.M.
 1995
 106 1-4 p. 606-617
12 p.
 artikel
120 Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71As Rohrlack, G.
 1995
 106 1-4 p. 267-270
4 p.
 artikel
121 Transient enhanced diffusion of dopant in preamorphised Si: the role of EOR defects Bonafos, C.
 1995
 106 1-4 p. 222-226
5 p.
 artikel
122 Vacancy related defect profiles in MeV cluster-ion irradiated silicon Hallén, A.
 1995
 106 1-4 p. 233-236
4 p.
 artikel
123 Valence band electronic redistribution in ion-beam-mixed PdAg alloys Chae, K.H.
 1995
 106 1-4 p. 60-64
5 p.
 artikel
124 Volatile products and endpoint detection in reactive ion etching of III–V compounds with a broad beam ECR source Melville, D.L.
 1995
 106 1-4 p. 179-182
4 p.
 artikel
                             124 gevonden resultaten
 
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