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Journal description
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Details for article 32 of 124 found articles
| Title: |
Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs |
| Author: |
Auret, F.D. Goodman, S.A. Erasmus, R.M. Meyer, W.E. Myburg, G. |
| Appeared in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
| Paging: | Volume 106 (1995) nr. 1-4 pages 5 p. |
| Year: |
1995 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 32 of 124 found articles
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