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Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy |
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Titel: |
Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy |
Auteur: |
Iida, Tsutomu Harada, Kentaro Kimura, Shinji Shima, Takayuki Katsumata, Hiroshi Makita, Yunosuke Shibata, Hajime Kobayashi, Naoto Uekusa, Shin-ichiro Matsumori, Tokue Kudo, Kazuhiro |
Verschenen in: |
Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms |
Paginering: |
Jaargang 106 (1995) nr. 1-4 pagina's 4 p. |
Jaar: |
1995 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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