nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accelerated lifetime estimation of thermosonic Cu ball bonds on Al metallization
|
Lassnig, A. |
|
2013 |
106 |
C |
p. 188-194 7 p. |
artikel |
2 |
Adhesion analysis for on-chip interconnect structures by beam bending techniques with optical crack length determination
|
Hentschel, R.L. |
|
2013 |
106 |
C |
p. 172-176 5 p. |
artikel |
3 |
Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidation
|
Kim, Hyungjun |
|
2013 |
106 |
C |
p. 69-75 7 p. |
artikel |
4 |
Author Index
|
|
|
2013 |
106 |
C |
p. 219-224 6 p. |
artikel |
5 |
Characterization of imprinted gratings based on transparent materials by transmission scatterometry
|
Pietroy, David |
|
2013 |
106 |
C |
p. 48-51 4 p. |
artikel |
6 |
Chemisorption of ALD precursors in and on porous low-k films
|
Verdonck, P. |
|
2013 |
106 |
C |
p. 81-84 4 p. |
artikel |
7 |
Comparison of quantum mechanical methods for the simulation of electronic transport through carbon nanotubes
|
Zienert, Andreas |
|
2013 |
106 |
C |
p. 100-105 6 p. |
artikel |
8 |
Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics
|
Suzumura, N. |
|
2013 |
106 |
C |
p. 200-204 5 p. |
artikel |
9 |
Copper electrodeposition into macroporous silicon arrays for through silicon via applications
|
Defforge, T. |
|
2013 |
106 |
C |
p. 160-163 4 p. |
artikel |
10 |
Cu passivation for enhanced low temperature (⩽300°C) bonding in 3D integration
|
Lim, D.F. |
|
2013 |
106 |
C |
p. 144-148 5 p. |
artikel |
11 |
CVD of cobalt–tungsten alloy film as a novel copper diffusion barrier
|
Shimizu, Hideharu |
|
2013 |
106 |
C |
p. 91-95 5 p. |
artikel |
12 |
Decreasing reaction rate at the end of silicidation: In-situ CoSi2 XRD study and modeling
|
Delattre, R. |
|
2013 |
106 |
C |
p. 125-128 4 p. |
artikel |
13 |
Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness
|
Yang, C.-C. |
|
2013 |
106 |
C |
p. 214-218 5 p. |
artikel |
14 |
Effectiveness of wafer level test for electromigration wear out reporting in advanced CMOS interconnects reliability assessment
|
Bana, F. |
|
2013 |
106 |
C |
p. 195-199 5 p. |
artikel |
15 |
Effect of direct current stressing to Cu–Cu bond interface imperfection for three dimensional integrated circuits
|
Made, Riko I |
|
2013 |
106 |
C |
p. 149-154 6 p. |
artikel |
16 |
Effect of TSV density on local stress concentration: Micro-Raman spectroscopy measurement and Finite Element Analysis
|
Le Texier, F. |
|
2013 |
106 |
C |
p. 139-143 5 p. |
artikel |
17 |
Electrical characterization of CNT contacts with Cu Damascene top contact
|
van der Veen, Marleen H. |
|
2013 |
106 |
C |
p. 106-111 6 p. |
artikel |
18 |
Electrochemical migration of Ag nanoink patterns controlled by atmospheric-pressure plasma
|
Kim, Kwang-Seok |
|
2013 |
106 |
C |
p. 27-32 6 p. |
artikel |
19 |
Fabrication and characterization of tunable multiferroic Bi0.7Dy0.3FeO3 based on-chip micro-inductor
|
Mandal, M. |
|
2013 |
106 |
C |
p. 38-42 5 p. |
artikel |
20 |
Formation of SnAg solder bump by multilayer electroplating
|
Zhao, Qinghua |
|
2013 |
106 |
C |
p. 33-37 5 p. |
artikel |
21 |
Full reliability study of advanced metallization options for 30nm ½pitch interconnects
|
Croes, Kristof |
|
2013 |
106 |
C |
p. 210-213 4 p. |
artikel |
22 |
Generation of periodic surface wrinkles using a single layer resin by a repetitive dividing volume (RDV) technique
|
Park, Sang-Hu |
|
2013 |
106 |
C |
p. 13-20 8 p. |
artikel |
23 |
Highly adhesive electroless barrier/Cu-seed formation for high aspect ratio through-Si vias
|
Inoue, Fumihiro |
|
2013 |
106 |
C |
p. 164-167 4 p. |
artikel |
24 |
2011 IITC ORGANIZING COMMITTEE
|
|
|
2013 |
106 |
C |
p. 55- 1 p. |
artikel |
25 |
Inside Front Cover - Editorial Board
|
|
|
2013 |
106 |
C |
p. IFC- 1 p. |
artikel |
26 |
Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growth
|
Gerlich, Lukas |
|
2013 |
106 |
C |
p. 63-68 6 p. |
artikel |
27 |
Investigation of aluminum film properties and microstructure for replacement metal gate application
|
Huang, R.P. |
|
2013 |
106 |
C |
p. 56-62 7 p. |
artikel |
28 |
Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetration
|
Lu, Hai-Sheng |
|
2013 |
106 |
C |
p. 85-90 6 p. |
artikel |
29 |
2011 MAM Committee
|
|
|
2013 |
106 |
C |
p. 54- 1 p. |
artikel |
30 |
Microstructural void environment characterization by electron imaging in 45nm technology node to link electromigration and copper microstructure
|
Galand, R. |
|
2013 |
106 |
C |
p. 168-171 4 p. |
artikel |
31 |
Modeling the constitutive and frictional behavior of PTFE flexible stamps for nanoimprint lithography
|
Sonne, M.R. |
|
2013 |
106 |
C |
p. 1-8 8 p. |
artikel |
32 |
Moisture absorption impact on Cu alloy/low-k reliability during process queue time
|
Tsuchiya, H. |
|
2013 |
106 |
C |
p. 205-209 5 p. |
artikel |
33 |
Nanoindentation for reliability assessment of ULK films and interconnects structures
|
Yeap, Kong Boon |
|
2013 |
106 |
C |
p. 182-187 6 p. |
artikel |
34 |
On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processing
|
Civale, Yann |
|
2013 |
106 |
C |
p. 155-159 5 p. |
artikel |
35 |
Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O3–HfO2 dielectrics for metal–insulator–metal capacitor applications
|
Zhang, Li-Feng |
|
2013 |
106 |
C |
p. 96-99 4 p. |
artikel |
36 |
Selected papers from the 20th European Workshop on Materials for Advanced Metallization 2011
|
Schulz, Stefan E. |
|
2013 |
106 |
C |
p. 53- 1 p. |
artikel |
37 |
Selective self-assembled monolayer coating to enable Cu-to-Cu connection in dual damascene vias
|
Maestre Caro, A. |
|
2013 |
106 |
C |
p. 76-80 5 p. |
artikel |
38 |
Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum
|
Shili, K. |
|
2013 |
106 |
C |
p. 43-47 5 p. |
artikel |
39 |
Si ohmic contacts on N-type SiC studied by XPS
|
Cichoň, Stanislav |
|
2013 |
106 |
C |
p. 132-138 7 p. |
artikel |
40 |
Stress-induced voiding in nickel silicide
|
Futase, Takuya |
|
2013 |
106 |
C |
p. 116-120 5 p. |
artikel |
41 |
Structural optimization of the micro-membrane for a novel surface stress-based capacitive biosensor
|
Zhang, Wendong |
|
2013 |
106 |
C |
p. 9-12 4 p. |
artikel |
42 |
Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer
|
Guo, Xiao |
|
2013 |
106 |
C |
p. 121-124 4 p. |
artikel |
43 |
Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium
|
Firrincieli, A. |
|
2013 |
106 |
C |
p. 129-131 3 p. |
artikel |
44 |
Surface microstructuring and protein patterning using hyaluronan derivatives
|
Márquez-Posadas, M.C. |
|
2013 |
106 |
C |
p. 21-26 6 p. |
artikel |
45 |
Table of Contents
|
|
|
2013 |
106 |
C |
p. v-vii nvt p. |
artikel |
46 |
Texture characterization of the NiSi film on Si substrate
|
Kimura, Hiroshi |
|
2013 |
106 |
C |
p. 112-115 4 p. |
artikel |
47 |
Water uptake of a low-κ dielectric film: Combining capacitance and gravimetric measurements
|
Kubasch, C. |
|
2013 |
106 |
C |
p. 177-181 5 p. |
artikel |