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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 3 of 47 found articles
| Title: |
Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidation |
| Author: |
Kim, Hyungjun |
| Appeared in: |
Microelectronic engineering |
| Paging: | Volume 106 (2013) nr. C pages 7 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 47 found articles
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