| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A combinatorial approach to phase synthesis and characterisation in atmospheric pressure chemical vapour deposition
|
Hyett, Geoffrey
|
|
2007
|
201 |
22-23 |
p. 8966-8970
5 p.
|
artikel
|
| 2 |
Ag/Cu layers grown on Si(111) substrates by thermal inducted chemical vapor deposition
|
Szymańska, I.B.
|
|
2007
|
201 |
22-23 |
p. 9015-9020
6 p.
|
artikel
|
| 3 |
Aluminium tri-iso-propoxide: Shelf life, transport properties, and decomposition kinetics for the low temperature processing of aluminium oxide-based coatings
|
Sovar, M.-M.
|
|
2007
|
201 |
22-23 |
p. 9159-9162
4 p.
|
artikel
|
| 4 |
A multiscale model of the plasma assisted deposition of crystalline silicon
|
Rondanini, M.
|
|
2007
|
201 |
22-23 |
p. 8863-8867
5 p.
|
artikel
|
| 5 |
An experimental and computational analysis of a MOCVD process for the growth of Al films using DMEAA
|
Xenidou, T.C.
|
|
2007
|
201 |
22-23 |
p. 8868-8872
5 p.
|
artikel
|
| 6 |
A novel CVD/CVI reactor with an in-situ sampling apparatus connected to an online GC/MS
|
Li, Aijun
|
|
2007
|
201 |
22-23 |
p. 8939-8943
5 p.
|
artikel
|
| 7 |
Approach to control deposition of ultra thin films from metal organic precursors: Ru deposition
|
Igumenov, Igor K.
|
|
2007
|
201 |
22-23 |
p. 9003-9008
6 p.
|
artikel
|
| 8 |
a-SiC:H low-k deposition as copper diffusion barrier layer in advanced microelectronic interconnections
|
Charles-Alfred, C.
|
|
2007
|
201 |
22-23 |
p. 9260-9263
4 p.
|
artikel
|
| 9 |
Atomic layer deposition for the fabrication of 3D photonic crystals structures: Growth of Al2O3 and VO2 photonic crystal systems
|
Povey, I.M.
|
|
2007
|
201 |
22-23 |
p. 9345-9348
4 p.
|
artikel
|
| 10 |
Atomic layer deposition on particles using a fluidized bed reactor with in situ mass spectrometry
|
King, David M.
|
|
2007
|
201 |
22-23 |
p. 9163-9171
9 p.
|
artikel
|
| 11 |
Batch ALD: Characteristics, comparison with single wafer ALD, and examples
|
Granneman, Ernst
|
|
2007
|
201 |
22-23 |
p. 8899-8907
9 p.
|
artikel
|
| 12 |
BiFeO3 thin films prepared by MOCVD
|
Kartavtseva, M.S.
|
|
2007
|
201 |
22-23 |
p. 9149-9153
5 p.
|
artikel
|
| 13 |
Catalytically enhanced H2-free CVD of transition metals using commercially available precursors
|
Bahlawane, N.
|
|
2007
|
201 |
22-23 |
p. 8914-8918
5 p.
|
artikel
|
| 14 |
Catalytic effects of production of carbon nanotubes in a thermogravimetric CVD reactor
|
Kouravelou, K.B.
|
|
2007
|
201 |
22-23 |
p. 9226-9231
6 p.
|
artikel
|
| 15 |
Characterization and optimization of porogen-based PECVD deposited extreme low-k materials as a function of UV-cure time
|
Verdonck, Patrick
|
|
2007
|
201 |
22-23 |
p. 9264-9268
5 p.
|
artikel
|
| 16 |
Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
|
Boogaard, A.
|
|
2007
|
201 |
22-23 |
p. 8976-8980
5 p.
|
artikel
|
| 17 |
Chemical modeling of a high-density inductively-coupled plasma reactor containing silane
|
Kovalgin, A.Y.
|
|
2007
|
201 |
22-23 |
p. 8849-8853
5 p.
|
artikel
|
| 18 |
Chemical routes to ultra thin films for copper barriers and liners
|
Shin, Jinhong
|
|
2007
|
201 |
22-23 |
p. 9256-9259
4 p.
|
artikel
|
| 19 |
Chemical vapor infiltration of photocatalytically active TiO2 thin films on glass microfibers
|
Sarantopoulos, Christos
|
|
2007
|
201 |
22-23 |
p. 9354-9358
5 p.
|
artikel
|
| 20 |
Chemical vapor synthesis of secondary carbon nanotubes catalyzed by iron nanoparticles electrodeposited on primary carbon nanotubes
|
Xia, Wei
|
|
2007
|
201 |
22-23 |
p. 9232-9237
6 p.
|
artikel
|
| 21 |
Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth
|
Chichignoud, G.
|
|
2007
|
201 |
22-23 |
p. 8888-8892
5 p.
|
artikel
|
| 22 |
Comparison of numerical methods for transient CVD simulations
|
Van Veldhuizen, S.
|
|
2007
|
201 |
22-23 |
p. 8859-8862
4 p.
|
artikel
|
| 23 |
Complex Pt/Al2O3 materials for small catalytic systems
|
Christoglou, Christos
|
|
2007
|
201 |
22-23 |
p. 9195-9199
5 p.
|
artikel
|
| 24 |
CVD-growth of ZnS x Se1− x with subsequent hot isostatic pressing
|
Gavrishchuk, E.M.
|
|
2007
|
201 |
22-23 |
p. 9385-9388
4 p.
|
artikel
|
| 25 |
Deposition of highly pure ruthenium thin films with a new metal-organic precursor
|
Gatineau, Julien
|
|
2007
|
201 |
22-23 |
p. 9146-9148
3 p.
|
artikel
|
| 26 |
Deposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD
|
Jiménez, C.
|
|
2007
|
201 |
22-23 |
p. 8971-8975
5 p.
|
artikel
|
| 27 |
Development of micromorph tandem solar cells on foil deposited by VHF-PECVD
|
Liu, Y.
|
|
2007
|
201 |
22-23 |
p. 9330-9333
4 p.
|
artikel
|
| 28 |
Di- and tri-aminosilane SAM-assisted patterning of highly pure poly(3,4-ethylenedioxythiophene) nanofilms robustly adhered to silicon oxide substrate
|
Pang, Ilsun
|
|
2007
|
201 |
22-23 |
p. 9426-9431
6 p.
|
artikel
|
| 29 |
Dimethylgold(III) carboxylates as new precursors for gold CVD
|
Bessonov, A.A.
|
|
2007
|
201 |
22-23 |
p. 9099-9103
5 p.
|
artikel
|
| 30 |
Direct deposition of polycrystalline diamond onto steel substrates
|
Buijnsters, J.G.
|
|
2007
|
201 |
22-23 |
p. 8955-8960
6 p.
|
artikel
|
| 31 |
Effect of annealing in oxygen atmosphere on morphological and electrical properties of iridium and ruthenium thin films prepared by liquid delivery MOCVD
|
Lisker, Marco
|
|
2007
|
201 |
22-23 |
p. 9294-9298
5 p.
|
artikel
|
| 32 |
Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O3 films
|
Funakubo, Hiroshi
|
|
2007
|
201 |
22-23 |
p. 9279-9284
6 p.
|
artikel
|
| 33 |
Effects of crystallinity and grain size on photocatalytic activity of titania films
|
Maeda, Masahiko
|
|
2007
|
201 |
22-23 |
p. 9309-9312
4 p.
|
artikel
|
| 34 |
Effects of high temperature annealing on MOCVD grown CaCu3Ti4O12 films on LaAlO3 substrates
|
Nigro, Raffaella Lo
|
|
2007
|
201 |
22-23 |
p. 9243-9247
5 p.
|
artikel
|
| 35 |
Electrical, mechanical and metal contact properties of polycrystalline 3C-SiC films for MEMS in harsh environments
|
Zhang, Jingchun
|
|
2007
|
201 |
22-23 |
p. 8893-8898
6 p.
|
artikel
|
| 36 |
Evaluation of a novel fluorine free copper (I) precursor for Cu CVD
|
Tran, Phong Dinh
|
|
2007
|
201 |
22-23 |
p. 9066-9070
5 p.
|
artikel
|
| 37 |
Facile one-step-synthesis of carbon wrapped copper nanowires by thermal decomposition of Copper(II)–acetylacetonate
|
Haase, D.
|
|
2007
|
201 |
22-23 |
p. 9184-9188
5 p.
|
artikel
|
| 38 |
Ferroelectric PbTiO3 films grown by pulsed liquid injection MOCVD
|
Bartasyte, A.
|
|
2007
|
201 |
22-23 |
p. 9340-9344
5 p.
|
artikel
|
| 39 |
FTIR characterization of light emitting Si-rich nitride films prepared by low pressure chemical vapor deposition
|
Vamvakas, V. Em.
|
|
2007
|
201 |
22-23 |
p. 9359-9364
6 p.
|
artikel
|
| 40 |
Growth of TiO2 thin films by AP-MOCVD on stainless steel substrates for photocatalytic applications
|
Duminica, F.-D.
|
|
2007
|
201 |
22-23 |
p. 9304-9308
5 p.
|
artikel
|
| 41 |
Growth of zinc oxide films and nanowires by atmospheric-pressure chemical vapor deposition using zinc powder and water as source materials
|
Terasako, T.
|
|
2007
|
201 |
22-23 |
p. 8924-8930
7 p.
|
artikel
|
| 42 |
Growth of Zinc Oxide nanowire on Ni/Cu–Zn/SiO2/Si substrate
|
Liu, W.L.
|
|
2007
|
201 |
22-23 |
p. 9221-9225
5 p.
|
artikel
|
| 43 |
Growth rate, microstructure and conformality as a function of vapor exposure for zirconia thin films by pulsed-pressure MOCVD
|
Krumdieck, Susan
|
|
2007
|
201 |
22-23 |
p. 8908-8913
6 p.
|
artikel
|
| 44 |
Guanidinato-based precursors for MOCVD of metal nitrides (M x N: M = Ta,W)
|
Rische, Daniel
|
|
2007
|
201 |
22-23 |
p. 9125-9130
6 p.
|
artikel
|
| 45 |
High-density silicon nitride deposited at low substrate temperature with high deposition rate using hot wire chemical vapour deposition
|
Verlaan, V.
|
|
2007
|
201 |
22-23 |
p. 9285-9288
4 p.
|
artikel
|
| 46 |
Homoepitaxial silicon carbide deposition processes via chlorine routes
|
Fiorucci, A.
|
|
2007
|
201 |
22-23 |
p. 8825-8829
5 p.
|
artikel
|
| 47 |
Hot-wire assisted chemical vapor deposition of Cu by direct-liquid-injection of CupraSelect®
|
Papadimitropoulos, G.
|
|
2007
|
201 |
22-23 |
p. 8935-8938
4 p.
|
artikel
|
| 48 |
Improving ALD growth rate via ligand basicity: Quantum chemical calculations on lanthanum precursors
|
Elliott, Simon D.
|
|
2007
|
201 |
22-23 |
p. 9076-9081
6 p.
|
artikel
|
| 49 |
Influence of external bias on the surface morphology of a-C:H films grown by electron cyclotron resonance chemical vapor deposition
|
Buijnsters, J.G.
|
|
2007
|
201 |
22-23 |
p. 8950-8954
5 p.
|
artikel
|
| 50 |
Influence of thickness on the epitaxial stabilisation of SmNiO3 thin films
|
Girardot, C.
|
|
2007
|
201 |
22-23 |
p. 9021-9024
4 p.
|
artikel
|
| 51 |
Initiated chemical vapor deposition (iCVD) of polymeric nanocoatings
|
Martin, Tyler P.
|
|
2007
|
201 |
22-23 |
p. 9400-9405
6 p.
|
artikel
|
| 52 |
Initiated chemical vapor deposition of perfectly alternating poly(styrene-alt-maleic anhydride)
|
Tenhaeff, Wyatt E.
|
|
2007
|
201 |
22-23 |
p. 9417-9421
5 p.
|
artikel
|
| 53 |
Initiated chemical vapour deposition (iCVD) of thermally stable poly-glycidyl methacrylate
|
Bakker, R.
|
|
2007
|
201 |
22-23 |
p. 9422-9425
4 p.
|
artikel
|
| 54 |
Intentionally patterned and spatially non-uniform film profiles in chemical vapor deposition processes
|
Adomaitis, Raymond A.
|
|
2007
|
201 |
22-23 |
p. 9025-9029
5 p.
|
artikel
|
| 55 |
Investigation into the selectivity of CVD iron from Fe(CO)5 precursor on various metal and dielectric patterned substrates
|
Bain, M.F.
|
|
2007
|
201 |
22-23 |
p. 8998-9002
5 p.
|
artikel
|
| 56 |
Iodine-catalyzed chemical vapor deposition of Cu on MPTMS monolayer surface in a low deposition temperature regime
|
Park, H.J.
|
|
2007
|
201 |
22-23 |
p. 9432-9436
5 p.
|
artikel
|
| 57 |
Knudsen cell mass spectrometry applied to the investigation of organometallic precursors vapours
|
Violet, Perrine
|
|
2007
|
201 |
22-23 |
p. 8813-8817
5 p.
|
artikel
|
| 58 |
Large scale synthesis of zinc oxide nanorods by homogeneous chemical vapour deposition and their characterisation
|
Bacsa, Revathi
|
|
2007
|
201 |
22-23 |
p. 9200-9204
5 p.
|
artikel
|
| 59 |
LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors
|
Milanov, Andrian
|
|
2007
|
201 |
22-23 |
p. 9109-9116
8 p.
|
artikel
|
| 60 |
Liquid injection MOCVD and ALD of ZrO2 using Zr–cyclopentadienyl precursors
|
Gaskell, Jeffrey M.
|
|
2007
|
201 |
22-23 |
p. 9095-9098
4 p.
|
artikel
|
| 61 |
Liquid injection MOCVD of TiO2 and SrTiO3 thin films from [Ti(OPr i )2(tbaoac)2]: Film properties and compatibility with [Sr(thd)2]
|
Thomas, Reji
|
|
2007
|
201 |
22-23 |
p. 9135-9140
6 p.
|
artikel
|
| 62 |
Low-k dielectrics on base of silicon carbon nitride films
|
Fainer, Nadezhda
|
|
2007
|
201 |
22-23 |
p. 9269-9274
6 p.
|
artikel
|
| 63 |
Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices
|
Brunets, I.
|
|
2007
|
201 |
22-23 |
p. 9209-9214
6 p.
|
artikel
|
| 64 |
Macroscale computer simulations to investigate the chemical vapor deposition of thin metal-oxide films
|
Neyts, E.
|
|
2007
|
201 |
22-23 |
p. 8838-8841
4 p.
|
artikel
|
| 65 |
Metalorganic chemical vapor deposition of metal oxide films exhibiting electric-pulse-induced resistance switching
|
Nakamura, Toshihiro
|
|
2007
|
201 |
22-23 |
p. 9275-9278
4 p.
|
artikel
|
| 66 |
MgO and CaO stabilized ZrO2 thin films obtained by Metal Organic Chemical Vapor Deposition
|
Carta, Giovanni
|
|
2007
|
201 |
22-23 |
p. 9289-9293
5 p.
|
artikel
|
| 67 |
MOCVD of magnesium titanium oxide thin films using an unusual magnesium precursor
|
Carta, Giovanni
|
|
2007
|
201 |
22-23 |
p. 9117-9119
3 p.
|
artikel
|
| 68 |
MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications
|
Lemberger, M.
|
|
2007
|
201 |
22-23 |
p. 9154-9158
5 p.
|
artikel
|
| 69 |
Modeling multiscale effects on transients during chemical vapor deposition
|
Gobbert, Matthias K.
|
|
2007
|
201 |
22-23 |
p. 8830-8837
8 p.
|
artikel
|
| 70 |
Molecular design of improved precursors for the MOCVD of oxides used in microelectronics
|
Jones, Anthony C.
|
|
2007
|
201 |
22-23 |
p. 9046-9054
9 p.
|
artikel
|
| 71 |
Molecular structure design of single source precursors and multivariate analysis of their evaporation in dynamic vacuum using EI-Mass spectrometry. An approach to Barium–Strontium Titanate–Niobate as a case study
|
Kessler, Vadim G.
|
|
2007
|
201 |
22-23 |
p. 9082-9088
7 p.
|
artikel
|
| 72 |
Multiscale investigation of the influence of surface morphology on thin film CVD
|
Barbato, A.
|
|
2007
|
201 |
22-23 |
p. 8884-8887
4 p.
|
artikel
|
| 73 |
Nanocrystalline diamond/β-SiC composite interlayers for the deposition of continuous diamond films on W and Mo substrate materials
|
Srikanth Vadali, V.S.S.
|
|
2007
|
201 |
22-23 |
p. 8981-8985
5 p.
|
artikel
|
| 74 |
N-doped TiO2 coatings grown by atmospheric pressure MOCVD for visible light-induced photocatalytic activity
|
Duminica, F.-D.
|
|
2007
|
201 |
22-23 |
p. 9349-9353
5 p.
|
artikel
|
| 75 |
NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena
|
Min, K.-C.
|
|
2007
|
201 |
22-23 |
p. 9252-9255
4 p.
|
artikel
|
| 76 |
NIR diode laser spectroscopy of HF and HCl at multiple points in the atmospheric pressure CVD of tin oxide films
|
Martin, Philip A.
|
|
2007
|
201 |
22-23 |
p. 9030-9034
5 p.
|
artikel
|
| 77 |
[No title]
|
|
|
2007
|
201 |
22-23 |
p. 8797-8798
2 p.
|
artikel
|
| 78 |
Novel cyclopentadienyl based precursors for CVD of W containing films
|
Anacleto, Antony Correia
|
|
2007
|
201 |
22-23 |
p. 9120-9124
5 p.
|
artikel
|
| 79 |
Novel multifunctional films
|
Brook, L.A.
|
|
2007
|
201 |
22-23 |
p. 9373-9377
5 p.
|
artikel
|
| 80 |
Organometallic precursors as catalyst to grow three-dimensional micro/nanostructures: Spheres, clusters & wires
|
Sacilotti, M.
|
|
2007
|
201 |
22-23 |
p. 9104-9108
5 p.
|
artikel
|
| 81 |
Particle functionalization and encapsulation by initiated chemical vapor deposition (iCVD)
|
Lau, Kenneth K.S.
|
|
2007
|
201 |
22-23 |
p. 9189-9194
6 p.
|
artikel
|
| 82 |
Phosphane copper(I) complexes as CVD precursors
|
Roth, Nina
|
|
2007
|
201 |
22-23 |
p. 9089-9094
6 p.
|
artikel
|
| 83 |
Photoactive and antibacterial TiO2 thin films on stainless steel
|
Evans, P.
|
|
2007
|
201 |
22-23 |
p. 9319-9324
6 p.
|
artikel
|
| 84 |
Physicochemical and structural properties of ultra thin films with embedded silicon particles
|
Bedjaoui, M.
|
|
2007
|
201 |
22-23 |
p. 9179-9183
5 p.
|
artikel
|
| 85 |
Plasma and gas-phase characterization of a pulsed plasma-enhanced chemical vapor deposition system engineered for self-limiting growth of aluminum oxide thin films
|
Szymanski, Scott F.
|
|
2007
|
201 |
22-23 |
p. 8991-8997
7 p.
|
artikel
|
| 86 |
Plasma assisted growth of nanotubes and nanowires
|
Griffiths, H.
|
|
2007
|
201 |
22-23 |
p. 9215-9220
6 p.
|
artikel
|
| 87 |
Plasma enhanced chemical vapour deposition of BC x N y films prepared from N-trimethylborazine: Modelling, synthesis and characterization
|
Sulyaeva, V.S.
|
|
2007
|
201 |
22-23 |
p. 9009-9014
6 p.
|
artikel
|
| 88 |
Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
|
Habuka, H.
|
|
2007
|
201 |
22-23 |
p. 8961-8965
5 p.
|
artikel
|
| 89 |
Polyimide (PI) films by chemical vapor deposition (CVD): Novel design, experiments and characterization
|
González, Jaime Puig-Pey
|
|
2007
|
201 |
22-23 |
p. 9437-9441
5 p.
|
artikel
|
| 90 |
Porous ultra low k deposited by PECVD: From deposition to material properties
|
Jousseaume, V.
|
|
2007
|
201 |
22-23 |
p. 9248-9251
4 p.
|
artikel
|
| 91 |
Precursor system for bio-integration ceramics and deposition onto tantala scaffold bone interface surfaces
|
Hartshorn, Richard
|
|
2007
|
201 |
22-23 |
p. 9413-9416
4 p.
|
artikel
|
| 92 |
Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances
|
Tabata, Akimori
|
|
2007
|
201 |
22-23 |
p. 8986-8990
5 p.
|
artikel
|
| 93 |
Scaling up a horizontal HVPE reactor
|
Dam, C.E.C.
|
|
2007
|
201 |
22-23 |
p. 8878-8883
6 p.
|
artikel
|
| 94 |
Si doped and nanocomposite Si–diamond films: Cathodoluminescence and photoluminescence characterizations of Si centers
|
Orlanducci, S.
|
|
2007
|
201 |
22-23 |
p. 9389-9394
6 p.
|
artikel
|
| 95 |
Silicon CVD deposition for low cost applications in photovoltaics
|
Schmich, Evelyn
|
|
2007
|
201 |
22-23 |
p. 9325-9329
5 p.
|
artikel
|
| 96 |
Silicon CVD on powders in fluidized bed: Experimental and multifluid Eulerian modelling study
|
Cadoret, L.
|
|
2007
|
201 |
22-23 |
p. 8919-8923
5 p.
|
artikel
|
| 97 |
Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films
|
Schulz, Stephan
|
|
2007
|
201 |
22-23 |
p. 9071-9075
5 p.
|
artikel
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| 98 |
Spatial control over atomic layer deposition using microcontact-printed resists
|
Jiang, Xirong
|
|
2007
|
201 |
22-23 |
p. 8799-8807
9 p.
|
artikel
|
| 99 |
Step coverage of thin titania films on patterned silicon substrate by pulsed-pressure MOCVD
|
Siriwongrungson, Vilailuck
|
|
2007
|
201 |
22-23 |
p. 8944-8949
6 p.
|
artikel
|
| 100 |
Structural and surface analysis of Mo–W oxide films prepared by atmospheric pressure chemical vapor deposition
|
Gesheva, K.A.
|
|
2007
|
201 |
22-23 |
p. 9378-9384
7 p.
|
artikel
|
| 101 |
Structure and electrical properties of selectively chemically vapor deposited vanadium oxide films from Vanadium tri-i-propoxy oxide vapors
|
Kritikos, L.
|
|
2007
|
201 |
22-23 |
p. 9334-9339
6 p.
|
artikel
|
| 102 |
Study of nanosized Zinc Oxide on Cu–Zn alloy substrate using Taguchi method
|
Liu, W.L.
|
|
2007
|
201 |
22-23 |
p. 9238-9242
5 p.
|
artikel
|
| 103 |
Study of the growth conditions and characterization of CaCu2O x and SrCu2O x thin films
|
Millon, C.
|
|
2007
|
201 |
22-23 |
p. 9395-9399
5 p.
|
artikel
|
| 104 |
Synthesis and coating of copper oxide nanoparticles using atmospheric pressure plasmas
|
Marino, E.
|
|
2007
|
201 |
22-23 |
p. 9205-9208
4 p.
|
artikel
|
| 105 |
Synthesis of undoped and Ni doped InTaO4 photoactive thin films by metal organic chemical vapor deposition
|
McSporran, N.
|
|
2007
|
201 |
22-23 |
p. 9365-9368
4 p.
|
artikel
|
| 106 |
Systematic control of the electrical conductivity of poly (3,4-ethylenedioxythiophene) via oxidative chemical vapor deposition (oCVD)
|
Im, Sung Gap
|
|
2007
|
201 |
22-23 |
p. 9406-9412
7 p.
|
artikel
|
| 107 |
Technology and optoelectronic properties of APCVD Cr2O3 and Mo–Cr mixed oxide thin films
|
Ivanova, T.
|
|
2007
|
201 |
22-23 |
p. 9313-9318
6 p.
|
artikel
|
| 108 |
The effects of hydrogen and temperature on the growth and microstructure of carbon nanotubes obtained by the Fe(CO)5 gas-phase-catalytic chemical vapor deposition
|
Kuo, Dong-Hau
|
|
2007
|
201 |
22-23 |
p. 9172-9178
7 p.
|
artikel
|
| 109 |
Theoretical determination of accurate rate constants: Application to the decomposition of a single-molecule precursor
|
Tafipolsky, Maxim
|
|
2007
|
201 |
22-23 |
p. 8818-8824
7 p.
|
artikel
|
| 110 |
The preparation of Cu/Al2O3 catalysts via CVD in a fluidized-bed reactor
|
Naumann d’Alnoncourt, Raoul
|
|
2007
|
201 |
22-23 |
p. 9035-9040
6 p.
|
artikel
|
| 111 |
Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing
|
Senocq, F.
|
|
2007
|
201 |
22-23 |
p. 9131-9134
4 p.
|
artikel
|
| 112 |
Thermal stability studies for advanced Hafnium and Zirconium ALD precursors
|
Rushworth, Simon
|
|
2007
|
201 |
22-23 |
p. 9060-9065
6 p.
|
artikel
|
| 113 |
Thermal stability, sublimation pressures and diffusion coefficients of some metal acetylacetonates
|
Siddiqi, M. Aslam
|
|
2007
|
201 |
22-23 |
p. 9055-9059
5 p.
|
artikel
|
| 114 |
Thin film sulphides and oxides of 3d metals prepared from complex precursors by CVD
|
Bessergenev, V.G.
|
|
2007
|
201 |
22-23 |
p. 9141-9145
5 p.
|
artikel
|
| 115 |
Towards multiscale modeling of Si nanocrystals LPCVD deposition on SiO2: From ab initio calculations to reactor scale simulations
|
Zahi, I.
|
|
2007
|
201 |
22-23 |
p. 8854-8858
5 p.
|
artikel
|
| 116 |
Transient ALD simulations for a multi-wafer reactor with trenched wafers
|
Lankhorst, A.M.
|
|
2007
|
201 |
22-23 |
p. 8842-8848
7 p.
|
artikel
|
| 117 |
Transport issues in focused electron beam chemical vapor deposition
|
Fedorov, Andrei G.
|
|
2007
|
201 |
22-23 |
p. 8808-8812
5 p.
|
artikel
|
| 118 |
Tungsten doped vanadium dioxide thin films prepared by atmospheric pressure chemical vapour deposition from vanadyl acetylacetonate and tungsten hexachloride
|
Binions, Russell
|
|
2007
|
201 |
22-23 |
p. 9369-9372
4 p.
|
artikel
|
| 119 |
Two deterministic approaches to topography evolution
|
Cale, Timothy S.
|
|
2007
|
201 |
22-23 |
p. 8873-8877
5 p.
|
artikel
|
| 120 |
Use of a synchrotron X-ray microbeam to map composition and structure of multimetallic metal oxide films deposited by combinatorial chemical vapor deposition
|
Xia, Bin
|
|
2007
|
201 |
22-23 |
p. 9041-9045
5 p.
|
artikel
|
| 121 |
Very high epitaxial growth rate of SiC using MTS as chloride-based precursor
|
Pedersen, H.
|
|
2007
|
201 |
22-23 |
p. 8931-8934
4 p.
|
artikel
|
| 122 |
Wear properties of MOCVD-grown aluminium oxide films studied by cavitation erosion experiments
|
Pflitsch, Christian
|
|
2007
|
201 |
22-23 |
p. 9299-9303
5 p.
|
artikel
|
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