nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Active defects in MOS devices on 4H-SiC: A critical review
|
Amini Moghadam, Hamid |
|
2016 |
60 |
C |
p. 1-9 9 p. |
artikel |
2 |
Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series
|
Lee, Chie-In |
|
2016 |
60 |
C |
p. 20-24 5 p. |
artikel |
3 |
An examination on the direct concentration approach to simulating moisture diffusion in a multi-material system
|
Liu, Dapeng |
|
2016 |
60 |
C |
p. 109-115 7 p. |
artikel |
4 |
A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors
|
Wang, Weiliang |
|
2016 |
60 |
C |
p. 67-69 3 p. |
artikel |
5 |
Atmospheric corrosion resistance of electroplated Ni/Ni–P/Au electronic contacts
|
Murugan, Vinod K. |
|
2016 |
60 |
C |
p. 84-92 9 p. |
artikel |
6 |
A transient noise simulation model for the analysis of the optimal number of stages of the analog accumulator in TDI CMOS image sensors
|
Nie, Kaiming |
|
2016 |
60 |
C |
p. 70-77 8 p. |
artikel |
7 |
Comparative study of low-frequency noise in 0.18μm and 0.35μm gate-length nMOSFETs with gate area of 1.1μm2
|
Hu, Chih-Chan |
|
2016 |
60 |
C |
p. 10-15 6 p. |
artikel |
8 |
Damage effects on low noise amplifiers with microwave pulses
|
Zhang, Cunbo |
|
2016 |
60 |
C |
p. 41-47 7 p. |
artikel |
9 |
Editorial Board
|
|
|
2016 |
60 |
C |
p. IFC- 1 p. |
artikel |
10 |
Effect of nano-Al2O3 reinforcement on the microstructure and reliability of Sn–3.0Ag–0.5Cu solder joints
|
Zhao, Zhenyu |
|
2016 |
60 |
C |
p. 126-134 9 p. |
artikel |
11 |
Flux effect on void quantity and size in soldered joints
|
Bušek, D. |
|
2016 |
60 |
C |
p. 135-140 6 p. |
artikel |
12 |
Identification of the degradation state for condition-based maintenance of insulated gate bipolar transistors: A self-organizing map approach
|
Rigamonti, Marco |
|
2016 |
60 |
C |
p. 48-61 14 p. |
artikel |
13 |
Impact of NBTI induced variations on delay locked loop multi-phase clock generator
|
S.R., Sriram |
|
2016 |
60 |
C |
p. 33-40 8 p. |
artikel |
14 |
Improvement of multicores throughput based on environmental conditions
|
Kocanda, Piotr |
|
2016 |
60 |
C |
p. 78-83 6 p. |
artikel |
15 |
Improvement of reliability for high-ohmic Cr–Si thin film resistors in a heat and humid environment: Removing moisture source by electrocatalytic decomposition of water
|
Wang, X.Y. |
|
2016 |
60 |
C |
p. 101-108 8 p. |
artikel |
16 |
Integrating physical level design and high level synthesis for simultaneous multi-cycle transient and multiple transient fault resiliency of application specific datapath processors
|
Kachave, Deepak |
|
2016 |
60 |
C |
p. 141-152 12 p. |
artikel |
17 |
KITO tool: A fault injection environment in Linux kernel data structures
|
Velasco, Alejandro David |
|
2016 |
60 |
C |
p. 153-162 10 p. |
artikel |
18 |
La2O3 gate dielectrics for AlGaN/GaN HEMT
|
Chen, J. |
|
2016 |
60 |
C |
p. 16-19 4 p. |
artikel |
19 |
Pulse plated silver metallization on porosified LTCC substrates for high frequency applications
|
Steinhäußer, Frank |
|
2016 |
60 |
C |
p. 93-100 8 p. |
artikel |
20 |
Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices
|
Bajwa, Adeel Ahmad |
|
2016 |
60 |
C |
p. 116-125 10 p. |
artikel |
21 |
Time dependent modeling of single particle displacement damage in silicon devices
|
Tang, Du |
|
2016 |
60 |
C |
p. 25-32 8 p. |
artikel |
22 |
Two-photon laser-assisted device alteration in CMOS integrated circuits using linearly, circularly and radially polarized light
|
Rutkauskas, M. |
|
2016 |
60 |
C |
p. 62-66 5 p. |
artikel |