nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current
|
Guan, Jian |
|
2016 |
59 |
C |
p. 55-59 5 p. |
artikel |
2 |
An improved modeling for life prediction of high-power white LED based on Weibull right approximation method
|
Zhang, Jianping |
|
2016 |
59 |
C |
p. 49-54 6 p. |
artikel |
3 |
A thermal cycling reliability study of ultrasonically bonded copper wires
|
Arjmand, Elaheh |
|
2016 |
59 |
C |
p. 126-133 8 p. |
artikel |
4 |
B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages
|
Cowley, A. |
|
2016 |
59 |
C |
p. 108-116 9 p. |
artikel |
5 |
Creep fatigue models of solder joints: A critical review
|
Wong, E.H. |
|
2016 |
59 |
C |
p. 1-12 12 p. |
artikel |
6 |
Degradation of pMOSFETs due to hot electron induced punchthrough
|
Son, Donghee |
|
2016 |
59 |
C |
p. 13-17 5 p. |
artikel |
7 |
Degradation study of single poly radiation sensors by monitoring charge trapping
|
Pikhay, Evgeny |
|
2016 |
59 |
C |
p. 18-25 8 p. |
artikel |
8 |
Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip–package interaction; a numerical investigation
|
Zahedmanesh, Houman |
|
2016 |
59 |
C |
p. 102-107 6 p. |
artikel |
9 |
Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket
|
Wang, Ping |
|
2016 |
59 |
C |
p. 30-36 7 p. |
artikel |
10 |
Editorial Board
|
|
|
2016 |
59 |
C |
p. IFC- 1 p. |
artikel |
11 |
Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending
|
Park, Chang Bum |
|
2016 |
59 |
C |
p. 37-43 7 p. |
artikel |
12 |
Evaluation of hybrid bonding technology of single-micron pitch with planar structure for 3D interconnection
|
Ohyama, Masaki |
|
2016 |
59 |
C |
p. 134-139 6 p. |
artikel |
13 |
Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs
|
Jankovic, Nebojsa D. |
|
2016 |
59 |
C |
p. 26-29 4 p. |
artikel |
14 |
Heat dissipation assessment of through silicon via (TSV)-based 3D IC packaging for CMOS image sensing
|
Cheng, Hsien-Chie |
|
2016 |
59 |
C |
p. 84-94 11 p. |
artikel |
15 |
Investigation of MBE grown inverted GaAs quantum dots
|
Nemcsics, Ákos |
|
2016 |
59 |
C |
p. 60-63 4 p. |
artikel |
16 |
[No title]
|
Gan, Chong Leong |
|
2016 |
59 |
C |
p. 140- 1 p. |
artikel |
17 |
Optimization of thermo-mechanical reliability of solder joints in crystalline silicon solar cell assembly
|
Zarmai, M.T. |
|
2016 |
59 |
C |
p. 117-125 9 p. |
artikel |
18 |
Quantification of cracked area in thermal path of high-power multi-chip modules using transient thermal impedance measurement
|
Eleffendi, Mohd. Amir |
|
2016 |
59 |
C |
p. 73-83 11 p. |
artikel |
19 |
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment
|
Chiu, Hsien-Chin |
|
2016 |
59 |
C |
p. 44-48 5 p. |
artikel |
20 |
Thermo-fluid simulation for the thermal design of the IGBT module in the power conversion system
|
Han, Chang-Woo |
|
2016 |
59 |
C |
p. 64-72 9 p. |
artikel |
21 |
Validation of TSV thermo-mechanical simulation by stress measurement
|
Feng, Wei |
|
2016 |
59 |
C |
p. 95-101 7 p. |
artikel |