| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress
|
Dubec, V.
|
|
2003
|
43 |
9-11 |
p. 1557-1561
5 p.
|
artikel
|
| 2 |
Advanced Local Lifetime Control for Higher Reliability of Power Devices
|
Vobecký, J.
|
|
2003
|
43 |
9-11 |
p. 1883-1888
6 p.
|
artikel
|
| 3 |
Advances in scanning SQUID microscopy for die-level and package-level fault isolation
|
Knauss, L.A.
|
|
2003
|
43 |
9-11 |
p. 1657-1662
6 p.
|
artikel
|
| 4 |
Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec’s MCM-D discrete passives devices.
|
Soussan, P.
|
|
2003
|
43 |
9-11 |
p. 1785-1790
6 p.
|
artikel
|
| 5 |
Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study
|
Mongellaz, B.
|
|
2003
|
43 |
9-11 |
p. 1513-1518
6 p.
|
artikel
|
| 6 |
A low energy FIB processing, repair, and test system
|
Miura, Katsuyoshi
|
|
2003
|
43 |
9-11 |
p. 1627-1631
5 p.
|
artikel
|
| 7 |
Aluminum bond-wire properties after 1 billion mechanical cycles
|
Lefranc, G.
|
|
2003
|
43 |
9-11 |
p. 1833-1838
6 p.
|
artikel
|
| 8 |
Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA Packaged Chipset IC
|
Lo, Wen-Yu
|
|
2003
|
43 |
9-11 |
p. 1583-1588
6 p.
|
artikel
|
| 9 |
A new method for the analysis of high-resolution SILC data
|
Aresu, S.
|
|
2003
|
43 |
9-11 |
p. 1483-1488
6 p.
|
artikel
|
| 10 |
A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy
|
Stangoni, Maria
|
|
2003
|
43 |
9-11 |
p. 1651-1656
6 p.
|
artikel
|
| 11 |
A new technique for contactless current contrast imaging of high frequency signals
|
Seifert, F.
|
|
2003
|
43 |
9-11 |
p. 1633-1638
6 p.
|
artikel
|
| 12 |
A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC Failure Analysis
|
Lee, Jon C.
|
|
2003
|
43 |
9-11 |
p. 1687-1692
6 p.
|
artikel
|
| 13 |
An ultra-low dark-count and jitter, superconducting, single-photon detector for emission timing analysis of integrated circuits
|
LeCoupanec, P.
|
|
2003
|
43 |
9-11 |
p. 1621-1626
6 p.
|
artikel
|
| 14 |
Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling
|
Schmitt, P.
|
|
2003
|
43 |
9-11 |
p. 1957-1962
6 p.
|
artikel
|
| 15 |
Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits
|
Andriamonje, G.
|
|
2003
|
43 |
9-11 |
p. 1803-1807
5 p.
|
artikel
|
| 16 |
A procedure for reliability control and optimization of mixed-signal smart power CMOS pocesses
|
Aal, A.
|
|
2003
|
43 |
9-11 |
p. 1395-1400
6 p.
|
artikel
|
| 17 |
A study of considering the reliability issues on ASIC/Memory integration by SIP (System-in-Package) technology
|
Song, Yong-Ha
|
|
2003
|
43 |
9-11 |
p. 1405-1410
6 p.
|
artikel
|
| 18 |
Author index
|
|
|
2003
|
43 |
9-11 |
p. I-III
nvt p.
|
artikel
|
| 19 |
Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation
|
Deckelmann, A.Icaza
|
|
2003
|
43 |
9-11 |
p. 1895-1900
6 p.
|
artikel
|
| 20 |
Backside Flip-Chip testing by means of high-bandwidth luminescence detection
|
Tosi, A.
|
|
2003
|
43 |
9-11 |
p. 1669-1674
6 p.
|
artikel
|
| 21 |
Characterization and reliability of a switch matrix based on MOEMS technology
|
Boyer Heard, I.
|
|
2003
|
43 |
9-11 |
p. 1935-1937
3 p.
|
artikel
|
| 22 |
Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS)
|
Beauchêne, T.
|
|
2003
|
43 |
9-11 |
p. 1577-1582
6 p.
|
artikel
|
| 23 |
Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
|
Frammelsberger, Werner
|
|
2003
|
43 |
9-11 |
p. 1465-1470
6 p.
|
artikel
|
| 24 |
Charge trapping in SiO2/HfO2/TiN gate stack
|
Lime, F
|
|
2003
|
43 |
9-11 |
p. 1445-1448
4 p.
|
artikel
|
| 25 |
Charging induced damage by photoconduction through thick inter metal dielectrics
|
Ackaert, Jan
|
|
2003
|
43 |
9-11 |
p. 1525-1529
5 p.
|
artikel
|
| 26 |
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices
|
Zander, D.
|
|
2003
|
43 |
9-11 |
p. 1489-1493
5 p.
|
artikel
|
| 27 |
Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS
|
Rigo, S.
|
|
2003
|
43 |
9-11 |
p. 1963-1968
6 p.
|
artikel
|
| 28 |
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
|
Pey, K.L
|
|
2003
|
43 |
9-11 |
p. 1471-1476
6 p.
|
artikel
|
| 29 |
Correlation of gate oxide reliability and product tests on leading edge DRAM technology
|
Aichmayr, G.
|
|
2003
|
43 |
9-11 |
p. 1389-1393
5 p.
|
artikel
|
| 30 |
Deformation and damage of a solder–copper joint
|
Tropea, P.
|
|
2003
|
43 |
9-11 |
p. 1791-1796
6 p.
|
artikel
|
| 31 |
Degradation in polysilicon thin film transistors related to the quality of the polysilicon material
|
Toutah, H.
|
|
2003
|
43 |
9-11 |
p. 1531-1535
5 p.
|
artikel
|
| 32 |
Dependence of copper interconnect electromigration phenomenon on barrier metal materials
|
Hayashi, Masashi
|
|
2003
|
43 |
9-11 |
p. 1545-1550
6 p.
|
artikel
|
| 33 |
Determination of passive SiO2-Au microstructure resonant frequencies.
|
Marinier, Guillaume
|
|
2003
|
43 |
9-11 |
p. 1951-1955
5 p.
|
artikel
|
| 34 |
Determination of the ESD Failure Cause Through its Signature
|
Zecri, M.
|
|
2003
|
43 |
9-11 |
p. 1551-1556
6 p.
|
artikel
|
| 35 |
Direct measurement of residual stress in integrated circuit interconnect features
|
Horsfall, A.B.
|
|
2003
|
43 |
9-11 |
p. 1797-1801
5 p.
|
artikel
|
| 36 |
Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs
|
Djoric-Veljkovic, S.
|
|
2003
|
43 |
9-11 |
p. 1455-1460
6 p.
|
artikel
|
| 37 |
Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure
|
Pil Kim, Young
|
|
2003
|
43 |
9-11 |
p. 1461-1464
4 p.
|
artikel
|
| 38 |
Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects
|
Lucovsky, G.
|
|
2003
|
43 |
9-11 |
p. 1417-1426
10 p.
|
artikel
|
| 39 |
Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD Autochanneling
|
Desplats, R.
|
|
2003
|
43 |
9-11 |
p. 1663-1668
6 p.
|
artikel
|
| 40 |
Feedback of MEMS reliability study on the design stage: a step toward Reliability Aided Design (RAD)
|
Buchaillot, L.
|
|
2003
|
43 |
9-11 |
p. 1919-1928
10 p.
|
artikel
|
| 41 |
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses
|
Martin, J.C.
|
|
2003
|
43 |
9-11 |
p. 1725-1730
6 p.
|
artikel
|
| 42 |
From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing
|
Beaudoin, F.
|
|
2003
|
43 |
9-11 |
p. 1681-1686
6 p.
|
artikel
|
| 43 |
Gate oxide breakdown characterization on 0.13μm CMOS technology
|
Faure, D.
|
|
2003
|
43 |
9-11 |
p. 1519-1523
5 p.
|
artikel
|
| 44 |
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects
|
Belhaj, M.
|
|
2003
|
43 |
9-11 |
p. 1731-1736
6 p.
|
artikel
|
| 45 |
High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT’s
|
Kuchenbecker, J.
|
|
2003
|
43 |
9-11 |
p. 1719-1723
5 p.
|
artikel
|
| 46 |
High reliability level demonstrated on 980nm laser diode
|
Van de Casteele, J.
|
|
2003
|
43 |
9-11 |
p. 1751-1754
4 p.
|
artikel
|
| 47 |
High temperature reliability on automotive power modules verified by power cycling tests up to 150°C
|
Coquery, G.
|
|
2003
|
43 |
9-11 |
p. 1871-1876
6 p.
|
artikel
|
| 48 |
Hot electron induced punchthrough voltage of p-channel SOI MOSFET’s at room and elevated temperatures
|
Re Na Yun, Se
|
|
2003
|
43 |
9-11 |
p. 1477-1482
6 p.
|
artikel
|
| 49 |
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s
|
Castellazzi, A.
|
|
2003
|
43 |
9-11 |
p. 1877-1882
6 p.
|
artikel
|
| 50 |
IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power?
|
Azzopardi, S.
|
|
2003
|
43 |
9-11 |
p. 1901-1906
6 p.
|
artikel
|
| 51 |
Impact of 1.55 μm laser diode degradation laws on fibre optic system performances using a system simulator
|
Mendizabal, L.
|
|
2003
|
43 |
9-11 |
p. 1743-1749
7 p.
|
artikel
|
| 52 |
Improving SiC lateral DMOSFET reliability under high field stress
|
Ayalew, T.
|
|
2003
|
43 |
9-11 |
p. 1889-1894
6 p.
|
artikel
|
| 53 |
Increased hot carrier effects in Gate-All-Around SOI nMOSFET’s
|
Tae Park, Jong
|
|
2003
|
43 |
9-11 |
p. 1427-1432
6 p.
|
artikel
|
| 54 |
Influence and model of gate oxide breakdown on CMOS inverters
|
Rodrı́guez, R.
|
|
2003
|
43 |
9-11 |
p. 1439-1444
6 p.
|
artikel
|
| 55 |
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices
|
Fadlallah, M.
|
|
2003
|
43 |
9-11 |
p. 1433-1438
6 p.
|
artikel
|
| 56 |
Investigation of delaminations during thermal stress: scanning acoustic microscopy covering low and high temperatures
|
Rajamand, P.
|
|
2003
|
43 |
9-11 |
p. 1815-1820
6 p.
|
artikel
|
| 57 |
Laser-assisted decapsulation of plastic-encapsulated devices
|
Krüger, M.
|
|
2003
|
43 |
9-11 |
p. 1827-1831
5 p.
|
artikel
|
| 58 |
Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods.
|
Dilhaire, Stefan
|
|
2003
|
43 |
9-11 |
p. 1609-1613
5 p.
|
artikel
|
| 59 |
Latchup Analysis Using Emission Microscopy
|
Stellari, Franco
|
|
2003
|
43 |
9-11 |
p. 1603-1608
6 p.
|
artikel
|
| 60 |
Limitations to photon-emission microscopy when applied to “hot” devices
|
Deslandes, Hervé
|
|
2003
|
43 |
9-11 |
p. 1645-1650
6 p.
|
artikel
|
| 61 |
Low-cost backside laser test method to pre-characterize the COTS IC’s sensitivity to Single Event Effects.
|
Darracq, F.
|
|
2003
|
43 |
9-11 |
p. 1615-1619
5 p.
|
artikel
|
| 62 |
Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates
|
Curutchet, A.
|
|
2003
|
43 |
9-11 |
p. 1713-1718
6 p.
|
artikel
|
| 63 |
Magnetic emission mapping for passive integrated components characterisation
|
Crépel, O.
|
|
2003
|
43 |
9-11 |
p. 1809-1814
6 p.
|
artikel
|
| 64 |
MALTY––A memory test structure for analysis in the early phase of the technology development
|
Nirschl, Th.
|
|
2003
|
43 |
9-11 |
p. 1383-1387
5 p.
|
artikel
|
| 65 |
MEMS reliability modelling methodology: application to wobble micromotor failure analysis.
|
Muratet, S.
|
|
2003
|
43 |
9-11 |
p. 1945-1949
5 p.
|
artikel
|
| 66 |
Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant
|
Guédon, Alexandrine
|
|
2003
|
43 |
9-11 |
p. 1853-1858
6 p.
|
artikel
|
| 67 |
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
|
Gehring, A.
|
|
2003
|
43 |
9-11 |
p. 1495-1500
6 p.
|
artikel
|
| 68 |
Moisture diffusion in BCB resins used for MEMS packaging
|
Tetelin, A.
|
|
2003
|
43 |
9-11 |
p. 1939-1944
6 p.
|
artikel
|
| 69 |
Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling
|
Trinh, S.
|
|
2003
|
43 |
9-11 |
p. 1537-1543
7 p.
|
artikel
|
| 70 |
New method of qualification applied to optical amplifier with electronics
|
Gautier, C.
|
|
2003
|
43 |
9-11 |
p. 1761-1766
6 p.
|
artikel
|
| 71 |
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement
|
Busatto, G.
|
|
2003
|
43 |
9-11 |
p. 1907-1912
6 p.
|
artikel
|
| 72 |
[No title]
|
Labat, Nathalie
|
|
2003
|
43 |
9-11 |
p. 1351-1352
2 p.
|
artikel
|
| 73 |
On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices
|
Mura, G.
|
|
2003
|
43 |
9-11 |
p. 1771-1776
6 p.
|
artikel
|
| 74 |
Optimization of ESD protection structures suitable for BCD6 smart power technology
|
Meneghesso, G.
|
|
2003
|
43 |
9-11 |
p. 1589-1594
6 p.
|
artikel
|
| 75 |
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM
|
Porti, M.
|
|
2003
|
43 |
9-11 |
p. 1501-1505
5 p.
|
artikel
|
| 76 |
Pad Over Active (POA) solutions for three metal level BCD5 mixed power process - Design and validation of ESD protections
|
Andreini, A.
|
|
2003
|
43 |
9-11 |
p. 1377-1382
6 p.
|
artikel
|
| 77 |
Pre-breakdown leakage current fluctuations of thin gate oxide
|
Reiner, Joachim C.
|
|
2003
|
43 |
9-11 |
p. 1507-1512
6 p.
|
artikel
|
| 78 |
Reliability aspects of semiconductor devices in high temperature applications
|
Kanert, W.
|
|
2003
|
43 |
9-11 |
p. 1839-1846
8 p.
|
artikel
|
| 79 |
Reliability in automotive electronics: a case study applied to diesel engine control
|
Cassanelli, G.
|
|
2003
|
43 |
9-11 |
p. 1411-1416
6 p.
|
artikel
|
| 80 |
Reliability of low current electrical spring contacts in power modules
|
Hornung, E.
|
|
2003
|
43 |
9-11 |
p. 1859-1864
6 p.
|
artikel
|
| 81 |
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment
|
Velardia, F.
|
|
2003
|
43 |
9-11 |
p. 1847-1851
5 p.
|
artikel
|
| 82 |
Reliability of optoelectronics components: towards new qualification practices
|
Goudard, JL
|
|
2003
|
43 |
9-11 |
p. 1767-1769
3 p.
|
artikel
|
| 83 |
Reliability of ultra-thin oxides in CMOS circuits
|
Stathis, J.H.
|
|
2003
|
43 |
9-11 |
p. 1353-1360
8 p.
|
artikel
|
| 84 |
Reliability of visible GaN LEDs in plastic package
|
Meneghesso, G.
|
|
2003
|
43 |
9-11 |
p. 1737-1742
6 p.
|
artikel
|
| 85 |
Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress
|
Sydlo, C.
|
|
2003
|
43 |
9-11 |
p. 1929-1933
5 p.
|
artikel
|
| 86 |
Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug
|
Li, Yuan
|
|
2003
|
43 |
9-11 |
p. 1449-1454
6 p.
|
artikel
|
| 87 |
Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology
|
Rey-Tauriac, Y.
|
|
2003
|
43 |
9-11 |
p. 1865-1869
5 p.
|
artikel
|
| 88 |
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels –An explanation and die protection strategy
|
Sowariraj, M.S.B.
|
|
2003
|
43 |
9-11 |
p. 1569-1575
7 p.
|
artikel
|
| 89 |
Semiconductor material analysis based on microcalorimeter EDS
|
Simmnacher, B.
|
|
2003
|
43 |
9-11 |
p. 1675-1680
6 p.
|
artikel
|
| 90 |
Short defect characterization based on TCR parameter extraction
|
Firiti, A.
|
|
2003
|
43 |
9-11 |
p. 1563-1568
6 p.
|
artikel
|
| 91 |
Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures
|
Dalleau, David
|
|
2003
|
43 |
9-11 |
p. 1821-1826
6 p.
|
artikel
|
| 92 |
Single contact beam induced current phenomenon for microelectronic failure analysis
|
Phang, JCH
|
|
2003
|
43 |
9-11 |
p. 1595-1602
8 p.
|
artikel
|
| 93 |
SOI design challenges
|
Dufourt, D.
|
|
2003
|
43 |
9-11 |
p. 1361-1367
7 p.
|
artikel
|
| 94 |
Solar Cell Analysis with Light Emission and OBIC Techniques
|
Sanchez, K.
|
|
2003
|
43 |
9-11 |
p. 1755-1760
6 p.
|
artikel
|
| 95 |
Strain investigation around shallow trench isolations : a LACBED Study
|
Albarède, Paul-Henri
|
|
2003
|
43 |
9-11 |
p. 1693-1698
6 p.
|
artikel
|
| 96 |
Surface leakage current related failure of power silicon devices operated at high junction temperature
|
Nuttall, K.I.
|
|
2003
|
43 |
9-11 |
p. 1913-1918
6 p.
|
artikel
|
| 97 |
The challenges of virtual prototyping and qualification for future microelectronics
|
Zhang, G.Q.
|
|
2003
|
43 |
9-11 |
p. 1777-1783
7 p.
|
artikel
|
| 98 |
The right way to assess electronic system reliability: FIDES
|
Charpenel, P.
|
|
2003
|
43 |
9-11 |
p. 1401-1404
4 p.
|
artikel
|
| 99 |
Thermally Induced Voltage Alteration (TIVA) applied to ESD induced failures
|
Lucarelli, N.
|
|
2003
|
43 |
9-11 |
p. 1699-1704
6 p.
|
artikel
|
| 100 |
Time Resolved Photoemission (PICA) – From the Physics to Practical Considerations
|
Remmach, M.
|
|
2003
|
43 |
9-11 |
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