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                                       Details for article 67 of 102 found articles
 
 
  Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
 
 
Title: Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices
Author: Gehring, A.
Jiménez-Molinos, F.
Kosina, H.
Palma, A.
Gámiz, F.
Selberherr, S.
Appeared in: Microelectronics reliability
Paging: Volume 43 (2003) nr. 9-11 pages 6 p.
Year: 2003
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 67 of 102 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands