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                             102 results found
no title author magazine year volume issue page(s) type
1 A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress Dubec, V.
 2003
 43 9-11 p. 1557-1561
5 p.
 article
2 Advanced Local Lifetime Control for Higher Reliability of Power Devices Vobecký, J.
 2003
 43 9-11 p. 1883-1888
6 p.
 article
3 Advances in scanning SQUID microscopy for die-level and package-level fault isolation Knauss, L.A.
 2003
 43 9-11 p. 1657-1662
6 p.
 article
4 Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec’s MCM-D discrete passives devices. Soussan, P.
 2003
 43 9-11 p. 1785-1790
6 p.
 article
5 Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study Mongellaz, B.
 2003
 43 9-11 p. 1513-1518
6 p.
 article
6 A low energy FIB processing, repair, and test system Miura, Katsuyoshi
 2003
 43 9-11 p. 1627-1631
5 p.
 article
7 Aluminum bond-wire properties after 1 billion mechanical cycles Lefranc, G.
 2003
 43 9-11 p. 1833-1838
6 p.
 article
8 Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA Packaged Chipset IC Lo, Wen-Yu
 2003
 43 9-11 p. 1583-1588
6 p.
 article
9 A new method for the analysis of high-resolution SILC data Aresu, S.
 2003
 43 9-11 p. 1483-1488
6 p.
 article
10 A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy Stangoni, Maria
 2003
 43 9-11 p. 1651-1656
6 p.
 article
11 A new technique for contactless current contrast imaging of high frequency signals Seifert, F.
 2003
 43 9-11 p. 1633-1638
6 p.
 article
12 A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC Failure Analysis Lee, Jon C.
 2003
 43 9-11 p. 1687-1692
6 p.
 article
13 An ultra-low dark-count and jitter, superconducting, single-photon detector for emission timing analysis of integrated circuits LeCoupanec, P.
 2003
 43 9-11 p. 1621-1626
6 p.
 article
14 Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling Schmitt, P.
 2003
 43 9-11 p. 1957-1962
6 p.
 article
15 Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits Andriamonje, G.
 2003
 43 9-11 p. 1803-1807
5 p.
 article
16 A procedure for reliability control and optimization of mixed-signal smart power CMOS pocesses Aal, A.
 2003
 43 9-11 p. 1395-1400
6 p.
 article
17 A study of considering the reliability issues on ASIC/Memory integration by SIP (System-in-Package) technology Song, Yong-Ha
 2003
 43 9-11 p. 1405-1410
6 p.
 article
18 Author index 2003
 43 9-11 p. I-III
nvt p.
 article
19 Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation Deckelmann, A.Icaza
 2003
 43 9-11 p. 1895-1900
6 p.
 article
20 Backside Flip-Chip testing by means of high-bandwidth luminescence detection Tosi, A.
 2003
 43 9-11 p. 1669-1674
6 p.
 article
21 Characterization and reliability of a switch matrix based on MOEMS technology Boyer Heard, I.
 2003
 43 9-11 p. 1935-1937
3 p.
 article
22 Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS) Beauchêne, T.
 2003
 43 9-11 p. 1577-1582
6 p.
 article
23 Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy Frammelsberger, Werner
 2003
 43 9-11 p. 1465-1470
6 p.
 article
24 Charge trapping in SiO2/HfO2/TiN gate stack Lime, F
 2003
 43 9-11 p. 1445-1448
4 p.
 article
25 Charging induced damage by photoconduction through thick inter metal dielectrics Ackaert, Jan
 2003
 43 9-11 p. 1525-1529
5 p.
 article
26 Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices Zander, D.
 2003
 43 9-11 p. 1489-1493
5 p.
 article
27 Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS Rigo, S.
 2003
 43 9-11 p. 1963-1968
6 p.
 article
28 Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM Pey, K.L
 2003
 43 9-11 p. 1471-1476
6 p.
 article
29 Correlation of gate oxide reliability and product tests on leading edge DRAM technology Aichmayr, G.
 2003
 43 9-11 p. 1389-1393
5 p.
 article
30 Deformation and damage of a solder–copper joint Tropea, P.
 2003
 43 9-11 p. 1791-1796
6 p.
 article
31 Degradation in polysilicon thin film transistors related to the quality of the polysilicon material Toutah, H.
 2003
 43 9-11 p. 1531-1535
5 p.
 article
32 Dependence of copper interconnect electromigration phenomenon on barrier metal materials Hayashi, Masashi
 2003
 43 9-11 p. 1545-1550
6 p.
 article
33 Determination of passive SiO2-Au microstructure resonant frequencies. Marinier, Guillaume
 2003
 43 9-11 p. 1951-1955
5 p.
 article
34 Determination of the ESD Failure Cause Through its Signature Zecri, M.
 2003
 43 9-11 p. 1551-1556
6 p.
 article
35 Direct measurement of residual stress in integrated circuit interconnect features Horsfall, A.B.
 2003
 43 9-11 p. 1797-1801
5 p.
 article
36 Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs Djoric-Veljkovic, S.
 2003
 43 9-11 p. 1455-1460
6 p.
 article
37 Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure Pil Kim, Young
 2003
 43 9-11 p. 1461-1464
4 p.
 article
38 Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects Lucovsky, G.
 2003
 43 9-11 p. 1417-1426
10 p.
 article
39 Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD Autochanneling Desplats, R.
 2003
 43 9-11 p. 1663-1668
6 p.
 article
40 Feedback of MEMS reliability study on the design stage: a step toward Reliability Aided Design (RAD) Buchaillot, L.
 2003
 43 9-11 p. 1919-1928
10 p.
 article
41 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses Martin, J.C.
 2003
 43 9-11 p. 1725-1730
6 p.
 article
42 From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing Beaudoin, F.
 2003
 43 9-11 p. 1681-1686
6 p.
 article
43 Gate oxide breakdown characterization on 0.13μm CMOS technology Faure, D.
 2003
 43 9-11 p. 1519-1523
5 p.
 article
44 High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects Belhaj, M.
 2003
 43 9-11 p. 1731-1736
6 p.
 article
45 High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT’s Kuchenbecker, J.
 2003
 43 9-11 p. 1719-1723
5 p.
 article
46 High reliability level demonstrated on 980nm laser diode Van de Casteele, J.
 2003
 43 9-11 p. 1751-1754
4 p.
 article
47 High temperature reliability on automotive power modules verified by power cycling tests up to 150°C Coquery, G.
 2003
 43 9-11 p. 1871-1876
6 p.
 article
48 Hot electron induced punchthrough voltage of p-channel SOI MOSFET’s at room and elevated temperatures Re Na Yun, Se
 2003
 43 9-11 p. 1477-1482
6 p.
 article
49 Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s Castellazzi, A.
 2003
 43 9-11 p. 1877-1882
6 p.
 article
50 IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power? Azzopardi, S.
 2003
 43 9-11 p. 1901-1906
6 p.
 article
51 Impact of 1.55 μm laser diode degradation laws on fibre optic system performances using a system simulator Mendizabal, L.
 2003
 43 9-11 p. 1743-1749
7 p.
 article
52 Improving SiC lateral DMOSFET reliability under high field stress Ayalew, T.
 2003
 43 9-11 p. 1889-1894
6 p.
 article
53 Increased hot carrier effects in Gate-All-Around SOI nMOSFET’s Tae Park, Jong
 2003
 43 9-11 p. 1427-1432
6 p.
 article
54 Influence and model of gate oxide breakdown on CMOS inverters Rodrı́guez, R.
 2003
 43 9-11 p. 1439-1444
6 p.
 article
55 Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices Fadlallah, M.
 2003
 43 9-11 p. 1433-1438
6 p.
 article
56 Investigation of delaminations during thermal stress: scanning acoustic microscopy covering low and high temperatures Rajamand, P.
 2003
 43 9-11 p. 1815-1820
6 p.
 article
57 Laser-assisted decapsulation of plastic-encapsulated devices Krüger, M.
 2003
 43 9-11 p. 1827-1831
5 p.
 article
58 Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods. Dilhaire, Stefan
 2003
 43 9-11 p. 1609-1613
5 p.
 article
59 Latchup Analysis Using Emission Microscopy Stellari, Franco
 2003
 43 9-11 p. 1603-1608
6 p.
 article
60 Limitations to photon-emission microscopy when applied to “hot” devices Deslandes, Hervé
 2003
 43 9-11 p. 1645-1650
6 p.
 article
61 Low-cost backside laser test method to pre-characterize the COTS IC’s sensitivity to Single Event Effects. Darracq, F.
 2003
 43 9-11 p. 1615-1619
5 p.
 article
62 Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates Curutchet, A.
 2003
 43 9-11 p. 1713-1718
6 p.
 article
63 Magnetic emission mapping for passive integrated components characterisation Crépel, O.
 2003
 43 9-11 p. 1809-1814
6 p.
 article
64 MALTY––A memory test structure for analysis in the early phase of the technology development Nirschl, Th.
 2003
 43 9-11 p. 1383-1387
5 p.
 article
65 MEMS reliability modelling methodology: application to wobble micromotor failure analysis. Muratet, S.
 2003
 43 9-11 p. 1945-1949
5 p.
 article
66 Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant Guédon, Alexandrine
 2003
 43 9-11 p. 1853-1858
6 p.
 article
67 Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices Gehring, A.
 2003
 43 9-11 p. 1495-1500
6 p.
 article
68 Moisture diffusion in BCB resins used for MEMS packaging Tetelin, A.
 2003
 43 9-11 p. 1939-1944
6 p.
 article
69 Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling Trinh, S.
 2003
 43 9-11 p. 1537-1543
7 p.
 article
70 New method of qualification applied to optical amplifier with electronics Gautier, C.
 2003
 43 9-11 p. 1761-1766
6 p.
 article
71 Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement Busatto, G.
 2003
 43 9-11 p. 1907-1912
6 p.
 article
72 [No title] Labat, Nathalie
 2003
 43 9-11 p. 1351-1352
2 p.
 article
73 On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices Mura, G.
 2003
 43 9-11 p. 1771-1776
6 p.
 article
74 Optimization of ESD protection structures suitable for BCD6 smart power technology Meneghesso, G.
 2003
 43 9-11 p. 1589-1594
6 p.
 article
75 Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM Porti, M.
 2003
 43 9-11 p. 1501-1505
5 p.
 article
76 Pad Over Active (POA) solutions for three metal level BCD5 mixed power process - Design and validation of ESD protections Andreini, A.
 2003
 43 9-11 p. 1377-1382
6 p.
 article
77 Pre-breakdown leakage current fluctuations of thin gate oxide Reiner, Joachim C.
 2003
 43 9-11 p. 1507-1512
6 p.
 article
78 Reliability aspects of semiconductor devices in high temperature applications Kanert, W.
 2003
 43 9-11 p. 1839-1846
8 p.
 article
79 Reliability in automotive electronics: a case study applied to diesel engine control Cassanelli, G.
 2003
 43 9-11 p. 1411-1416
6 p.
 article
80 Reliability of low current electrical spring contacts in power modules Hornung, E.
 2003
 43 9-11 p. 1859-1864
6 p.
 article
81 Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment Velardia, F.
 2003
 43 9-11 p. 1847-1851
5 p.
 article
82 Reliability of optoelectronics components: towards new qualification practices Goudard, JL
 2003
 43 9-11 p. 1767-1769
3 p.
 article
83 Reliability of ultra-thin oxides in CMOS circuits Stathis, J.H.
 2003
 43 9-11 p. 1353-1360
8 p.
 article
84 Reliability of visible GaN LEDs in plastic package Meneghesso, G.
 2003
 43 9-11 p. 1737-1742
6 p.
 article
85 Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress Sydlo, C.
 2003
 43 9-11 p. 1929-1933
5 p.
 article
86 Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug Li, Yuan
 2003
 43 9-11 p. 1449-1454
6 p.
 article
87 Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology Rey-Tauriac, Y.
 2003
 43 9-11 p. 1865-1869
5 p.
 article
88 Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels –An explanation and die protection strategy Sowariraj, M.S.B.
 2003
 43 9-11 p. 1569-1575
7 p.
 article
89 Semiconductor material analysis based on microcalorimeter EDS Simmnacher, B.
 2003
 43 9-11 p. 1675-1680
6 p.
 article
90 Short defect characterization based on TCR parameter extraction Firiti, A.
 2003
 43 9-11 p. 1563-1568
6 p.
 article
91 Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures Dalleau, David
 2003
 43 9-11 p. 1821-1826
6 p.
 article
92 Single contact beam induced current phenomenon for microelectronic failure analysis Phang, JCH
 2003
 43 9-11 p. 1595-1602
8 p.
 article
93 SOI design challenges Dufourt, D.
 2003
 43 9-11 p. 1361-1367
7 p.
 article
94 Solar Cell Analysis with Light Emission and OBIC Techniques Sanchez, K.
 2003
 43 9-11 p. 1755-1760
6 p.
 article
95 Strain investigation around shallow trench isolations : a LACBED Study Albarède, Paul-Henri
 2003
 43 9-11 p. 1693-1698
6 p.
 article
96 Surface leakage current related failure of power silicon devices operated at high junction temperature Nuttall, K.I.
 2003
 43 9-11 p. 1913-1918
6 p.
 article
97 The challenges of virtual prototyping and qualification for future microelectronics Zhang, G.Q.
 2003
 43 9-11 p. 1777-1783
7 p.
 article
98 The right way to assess electronic system reliability: FIDES Charpenel, P.
 2003
 43 9-11 p. 1401-1404
4 p.
 article
99 Thermally Induced Voltage Alteration (TIVA) applied to ESD induced failures Lucarelli, N.
 2003
 43 9-11 p. 1699-1704
6 p.
 article
100 Time Resolved Photoemission (PICA) – From the Physics to Practical Considerations Remmach, M.
 2003
 43 9-11 p. 1639-1644
6 p.
 article
101 Trends in Failure Analysis Wagner, Lawrence C.
 2003
 43 9-11 p. 1369-1375
7 p.
 article
102 Wide band gap semiconductor reliability : Status and trends Delage, S.L.
 2003
 43 9-11 p. 1705-1712
8 p.
 article
                             102 results found
 
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