| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Application of IGBT junction temperature estimation in hybrid electric vehicles
|
Ma, Tianyu
|
|
|
167 |
C |
p.
|
artikel
|
| 2 |
Assessment of the solidification behavior and microhardness of Sb-modified Sn-Ag alloys
|
de Freitas, Pâmella Raffaela Dantas
|
|
|
167 |
C |
p.
|
artikel
|
| 3 |
A vertical diode-triggered silicon-controlled rectifier with adjustable holding voltage for ESD protection
|
Zhu, Zhihua
|
|
|
167 |
C |
p.
|
artikel
|
| 4 |
Cause analysis on abnormal defects between metal layers of IGBT dies for power modules
|
Chen, Jie
|
|
|
167 |
C |
p.
|
artikel
|
| 5 |
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress
|
Nicoletto, M.
|
|
|
167 |
C |
p.
|
artikel
|
| 6 |
Degradation modeling of InGaAs/InP avalanche photodiodes using calibrated technology computer-aided design
|
Bang, Heewon
|
|
|
167 |
C |
p.
|
artikel
|
| 7 |
Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs
|
Chen, Bang-Ren
|
|
|
167 |
C |
p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
|
167 |
C |
p.
|
artikel
|
| 9 |
Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs
|
Zhao, Shiwei
|
|
|
167 |
C |
p.
|
artikel
|
| 10 |
Enhancing long-term thermal reliability of sintered joints through the use of silver-coated copper particles
|
Kim, Dajung
|
|
|
167 |
C |
p.
|
artikel
|
| 11 |
Evaluation and thermal ageing of power semiconductor die attachments based on porous film electrodeposition
|
Janod, G.
|
|
|
167 |
C |
p.
|
artikel
|
| 12 |
Evolution analysis of mechanical behaviours of through‑silicon via under thermal cycling load
|
Hou, Kaihong
|
|
|
167 |
C |
p.
|
artikel
|
| 13 |
Experimental and numerical analysis of cyclic ratchetting and low cycle fatigue behaviour in meander-shaped interconnects for stretchable electronics applications
|
Sarikhan Khelejani, Amir
|
|
|
167 |
C |
p.
|
artikel
|
| 14 |
Failure analysis and simulation of IGBT under active and passive thermal cycling
|
Han, Jing
|
|
|
167 |
C |
p.
|
artikel
|
| 15 |
FEM-based development of novel 3D-printable plastic direct coolers for power semiconductor modules
|
Delmonte, N.
|
|
|
167 |
C |
p.
|
artikel
|
| 16 |
Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally strong?
|
Kim, Yun-Chan
|
|
|
167 |
C |
p.
|
artikel
|
| 17 |
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching
|
Merassi, A.A.
|
|
|
167 |
C |
p.
|
artikel
|
| 18 |
Numerical evaluation of radiation degradation for P-MOSFET power devices under total ionizing dose effect
|
Choi, Na-Yeon
|
|
|
167 |
C |
p.
|
artikel
|
| 19 |
Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules
|
Ghrabli, M.
|
|
|
167 |
C |
p.
|
artikel
|
| 20 |
Reliability prediction of multi-level power supply system based on Failure Precursor Parameters
|
Liu, W.M.
|
|
|
167 |
C |
p.
|
artikel
|
| 21 |
Selective hardening of RISCV soft-processors for space applications
|
Cora, G.
|
|
|
167 |
C |
p.
|
artikel
|
| 22 |
Solving bump bonding issues with 2.0 mil copper wire: A study on FSM integration and workability improvements
|
Yen, Hao-Lin
|
|
|
167 |
C |
p.
|
artikel
|
| 23 |
Study on electron and gamma irradiation effects and damage mechanism of GaN HEMT
|
Li, Hongxia
|
|
|
167 |
C |
p.
|
artikel
|
| 24 |
The impact of mold compound on power cycling capability of SiC MOSFETs in double sided cooled modules
|
Lentzsch, T.
|
|
|
167 |
C |
p.
|
artikel
|
Tijdschrift beschrijving